NDS9933A`.pdf

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September 1996
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
SO-8 P-Channel enhancement mode power field
effect transistors are produced using National's
proprietary, high cell density, DMOS technology.
This very high density process is especially tailored
to minimize on-state resistance and provide
superior switching performance.These devices are
particularly suited for low voltage applications such
as DC motor control and DC/DC conversion where
fast switching, low in-line power loss, and resistance
to transients are needed.
-2.7 A, -20 V. R DS(ON) = 0.14 W @ V GS = -4.5 V
R DS(ON) = 0.19 W @ V GS = -2.7 V
R DS(ON) = 0.2 W @ V GS = -2.5 V.
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a
widely used surface mount package.
Dual MOSFET in surface mount package.
________________________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol Parameter
NDS9933A
Units
V DSS
Drain-Source Voltage
-20
V
V GSS
Gate-Source Voltage
-8
V
I D
Drain Current - Continuous (Note 1a)
-2.7
A
- Pulsed
-10
P D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation (Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T J ,T STG Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R q JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
78
°C/W
R q JC
Thermal Resistance, Junction-to-Case (Note 1)
40
°C/W
NDS9933A Rev. C
323064754.030.png 323064754.031.png
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV DSS
Drain-Source Breakdown Voltage
V GS = 0 V, I D = -250 µA
-20
V
I DSS
Zero Gate Voltage Drain Current
V DS = -16 V, V GS = 0 V
1
µA
T J = 55 o C
10
µA
I GSSF
Gate - Body Leakage, Forward
V GS = 8 V, V DS = 0 V
100
nA
I GSSR
Gate - Body Leakage, Reverse
V GS = -8 V, V DS = 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = - 250 µA
-0.4 -0.65
-1
V
T J = 125 o C -0.3 -0.46 -0.6
R DS(ON)
Static Drain-Source On-Resistance V GS = -4.5 V, I D = -2.7A
0.122 0.14
W
T J = 125 o C
0.15 0.24
V GS = -2.7 V, I D = -1 A
0.16 0.19
V GS = -2.5V, I D = -1 A
0.17 0.2
I D(on)
On-State Drain Current
V GS = -4.5 V, V DS = -5 V
-10
A
V GS = -2.7 V, V DS = -5 V
-2
g FS
Forward Transconductance
V DS = -5 V, I D = -2.7 A
5
DYNAMIC CHARACTERISTICS
C iss
Input Capacitance
V DS =-10 V, V GS = 0 V,
f = 1.0 MHz
500
pF
C oss
Output Capacitance
245
pF
C rss
Reverse Transfer Capacitance
90
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
Turn - On Delay Time
V DD = - 5 V, I D = -1 A,
V GS = -4.5 V, R GEN = 6 W
10
18
ns
t r
Turn - On Rise Time
26
50
ns
t D(off)
Turn - Off Delay Time
37
60
ns
t f
Turn - Off Fall Time
42
75
ns
Q g
Total Gate Charge
V DS = -10 V,
I D = -2.7 A, V GS = - 4.5 V
7.8
10
nC
Q gs
Gate-Source Charge
1
nC
Q gd
Gate-Drain Charge
2
nC
NDS9933A Rev. C
323064754.032.png
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
V SD
Drain-Source Diode Forward Voltage V GS = 0 V, I S = - 1.3 A (Note 2)
-0.79 -1.2
V
Notes:
1. R q JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R q JC is guaranteed by design while R q CA is determined by the user's board design.
P D ( t ) =
R q JC + R q CA ( t ) = I 2 ( t ) · R DS ( ON ) @T J
Typical R q JA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78 o C/W when mounted on a 0.5 in 2 pad of 2oz copper.
b. 125 o C/W when mounted on a 0.02 in 2 pad of 2oz copper.
c. 135 o C/W when mounted on a 0.003 in 2 pad of 2oz copper.
R q JA ( t ) = T J - T A
1a
1b
1c
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9933A Rev. C
T J - T A
323064754.033.png 323064754.001.png 323064754.002.png 323064754.003.png 323064754.004.png 323064754.005.png
Typical Electrical Characteristics
-15
2
V = -4.5V
GS
-4.0
-3.5
1.8
-12
-3.0
V = -2.5V
GS
1.6
-9
-2.7
-2.7
-2.5
1.4
-3.0
-6
-3.5
1.2
-4.0
-2.0
-4.5
-3
-5.0
1
0
0
-1
-2
-3
-4
-5
0.8
0
-3
-6
-9
-12
-15
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
1.6
2
V = -4.5V
GS
1.5
I = -2.7A
D
1.8
V = -4.5V
GS
1.4
1.6
T = 125°C
J
1.3
1.4
1.2
1.1
1.2
25°C
1
1
0.9
0.8
-55°C
0.8
0.6
0.7
-50
-25
0
25
50
75
100
125
150
0.4
0
-3
-6
-9
-12
-15
T , JUNCTION TEMPERATURE (°C)
J
I , DRAIN CURRENT (A)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
-5
1.3
T = -55°C
J
V = V
DS
V = - 5V
DS
GS
I = -250µA
D
25
1.2
-4
125
1.1
-3
1
-2
0.9
0.8
-1
0.7
0
0.6
0
-0.5
-1
-1.5
-2
-2.5
-3
-50
-25
0
25
50
75
100
125
150
V , GATE TO SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (°C)
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
NDS9933A Rev. C
D
J
323064754.006.png 323064754.007.png 323064754.008.png 323064754.009.png 323064754.010.png 323064754.011.png 323064754.012.png 323064754.013.png 323064754.014.png 323064754.015.png 323064754.016.png 323064754.017.png 323064754.018.png 323064754.019.png 323064754.020.png 323064754.021.png 323064754.022.png 323064754.023.png 323064754.024.png
Typical Electrical Characteristics
1.08
10
I = -250µA
D
4
V = 0V
GS
1.06
1
T = 125°C
J
1.04
1.02
0.1
25°C
1
0.01
-55°C
0.98
0.96
0.001
0.94
-50
-25
0
25
50
75
100
125
150
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
T , JUNCTION TEMPERATURE (°C)
J
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature .
1200
5
1000
V = -5.0V
DS
I = -2.7A
D
800
-10V
500
C iss
4
-15V
400
C oss
3
300
200
2
f = 1 MHz
V = 0V
GS
C rss
100
1
50
0.1
0.2
0.5
1
2
3
5
10 15 20
0
0
2
4
6
8
10
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Q , GATE CHARGE (nC)
g
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
-V DD
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
R L
V IN
90%
90%
D
V OUT
V OUT
V GS
10%
R GEN
10%
DUT
G
90%
S
V IN
50%
50%
10%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDS9933A Rev. C
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