SI4920.pdf

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Si4920DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
V DS (V)
r DS(on) (
)
I D (A)
0.025 @ V GS = 10 V
6.9
30
30
0.035 @ V GS = 4.5 V
5.8
D 1 D 1
D 2 D 2
SO-8
S 1
1
8
D 1
G 1
2
3
7
D 1
G 1
G 2
S 2
6
D 2
G 2
4
5
D 2
Top View
S 1
S 2
N-Channel MOSFET
N-Channel MOSFET
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
30
V
V
Gate-Source Voltage
V GS
20
T A = 25
C
6.9
C) a
Continuous Drain Current (T J = 150
C) a
I D
T A = 70 C
5.5
A
A
Pulsed Drain Current (10
s Pulse Width)
I DM
40
Continuous Source Current (Diode Conduction) a
I S
1.7
Maximum Power Dissipation a
T A = 25 C
P D
2
W
P D
W
T A = 70
C
1.3
Operating Junction and Storage Temperature Range
T J , T stg
–55 to 150
C
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient a
R thJA
62.5
C/W
Notes
a. Surface Mounted on FR4 Board, t
10 sec.
Document Number: 70667
S-56945—Rev. C, 23-Nov-98
www.vishay.com
FaxBack 408-970-5600
2-1
Continuous Drain Current (T J = 150
I D
A
Maximum Power Dissipation a
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Si4920DY
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250
A
1
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS =
20 V
100
nA
Zero Gate Voltage Drain Current
V DS = 30 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
A
I DSS
A
V DS = 30 V, V GS = 0 V, T J = 55
C
25
On-State Drain Current a
I D(on)
V DS
5 V, V GS = 10 V
20
A
V GS = 10 V, I D = 6.9 A
0.020
0.025
Drain-Source On-State Resistance a
Drain-Source On-State Resistance a
r DS(on)
V GS = 4.5 V, I D = 5.8 A
0.026
0.035
Forward Transconductance a
g fs
V DS = 15 V, I D = 6.9 A
25
S
Diode Forward Voltage a
V SD
I S = 1.7 A, V GS = 0 V
1.2
V
Dynamic b
Gate Charge
Q g
V DS = 15 V, V GS = 5V, I D = 6.9 A
15
23
Total Gate Charge
Q gt
30
50
nC
nC
Gate-Source Charge
Q gs
V DS = 15 V, V GS = 10 V, I D = 6.9 A
A
7.5
Gate-Drain Charge
Q gd
3.5
Turn-On Delay Time
t d(on)
12
20
Rise Time
t r
V DD = 15 V, R L = 15
10
20
DD , L
I D 1 A, V GEN = 10 V, R G = 6
I
1 A V
10 V R
6
Turn-Off Delay Time
t d(off)
60
90
ns
Fall Time
t f
15
30
Source-Drain Reverse Recovery Time
t rr
I F = 1.7 A, di/dt = 100 A/ s
50
90
2%.
b. Guaranteed by design, not subject to production testing.
300 s, duty cycle
www.vishay.com
FaxBack 408-970-5600
Document Number: 70667
S-56945—Rev. C, 23-Nov-98
2-2
r DS(on)
C
V VV VI
V15 VR15
Notes
a. Pulse test; pulse width
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Si4920DY
Vishay Siliconix
Output Characteristics
Transfer Characteristics
40
40
V GS = 10 thru 5 V
32
4 V
30
24
20
16
T C = 125 C
10
8
3 V
25
C
–55
C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
V DS – Drain-to-Source Voltage (V)
V GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.05
3000
2500
0.04
C iss
V GS = 4.5 V
2000
0.03
1500
0.02
1000
V GS = 10 V
C oss
0.01
500
C rss
0
0
0
10
20
30
40
0
5
10
15
20
25
30
I D – Drain Current (A)
V DS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
V DS = 15 V
I D = 6.9 A
V GS = 10 V
I D = 6.9 A
8
1.4
6
1.2
4
1.0
2
0.8
0
0.6
0
5
10
15
20
25
30
–50 –25
0
25
50
75
100 125 150
Q g – Total Gate Charge (nC)
T J – Junction Temperature (
C)
Document Number: 70667
S-56945—Rev. C, 23-Nov-98
www.vishay.com
FaxBack 408-970-5600
2-3
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Si4920DY
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
40
0.10
30
20
0.08
10
0.06
T J = 150
C
0.04
T J = 25 C
I D = 6.9 A
0.02
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V SD – Source-to-Drain Voltage (V)
V GS – Gate-to-Source Voltage (V)
0.4
Threshold Voltage
30
Single Pulse Power
C
Single Pulse
0.2
25
–0.0
I D = 250 A
20
–0.2
15
–0.4
–0.6
10
–0.8
5
–1.0
0
–50 –25
0
25
50
75
100 125 150
0.01
0.10
1.00
10.00
T J – Temperature (
C)
Time (sec)
2
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
Notes :
0.1
P DM
0.1
0.05
t 1
t 2
t 1
t 2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 62.5
C/W
3. T JM – T A = P DM Z thJA (t)
Single Pulse
4. Surface Mounted
0.01
10 –4
10 –3
10 –2
10 –1
1
10
30
Square Wave Pulse Duration (sec)
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FaxBack 408-970-5600
Document Number: 70667
S-56945—Rev. C, 23-Nov-98
2-4
T C = 25
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