SP8M8.pdf
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SP8M8
Transistors
Switching
SP8M8
z
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
z
External dimensions
(Unit : mm)
SOP8
5.0
±
0.2
z
Application
Power switching, DC / DC converter.
0.2
±
0.1
0.4
±
0.1
1.27
0.1
Each lead has same dimensions
z
Absolute maximum ratings
(Ta=25
°
C)
z
Equivalent circuit
Parameter
Symbol
Limits
Unit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Nchannel
Pchannel
Drain-source voltage
Gate-source voltage
Drain current
V
DSS
30
−
30
−
20
±
4.5
±
V
V
GSS
20
V
Continuous
Pulsed
Continuous
I
D
±
6.0
A
∗
2
∗
2
I
DP
±
24
18
−
1.6
−
18
A
∗
1
(1) (2) (3) (4)
Source current
(Body diode)
I
S
1.6
A
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
Pulsed
I
SP
20
A
∗
1
∗
1
∗
1
Total power dissipation
Channel temperature
Storage temperature
P
D
2
W
∗
2
Tch
150
°
C
(1)
(2)
(3)
(4)
Tstg
−
55 to
+
150
C
∗
1 ESD PROTECTION DIODE
∗
2 BODY DIODE
∗
1 Pw
≤
10
µ
s, Duty cycle
≤
1%
∗
2 MOUNTED ON A CERAMIC BOARD.
∗
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
z
Thermal resistance
(Ta=25
°
C)
Parameter
Symbol
Limits
Unit
Channel to ambient
Rth (ch-a)
62.5
°
C / W
∗
∗
MOUNTED ON A CERAMIC BOARD.
1/5
°
SP8M8
Transistors
N-ch
z
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
I
GSS
Min.
−
Typ. Max. Unit
Conditions
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
−
10
µ
A
V
GS
=
20V, V
DS
=
0V
V
(BR) DSS
I
DSS
V
GS (th)
30
−
−
V
I
D
=
1mA, V
GS
=
0V
−
−
1
µ
A
V
DS
=
30V, V
GS
=
0V
1.0
−
2.5
V
V
DS
=
10V, I
D
=
1mA
−
21
30
I
D
=
6.0A, V
GS
=
10V
∗
∗
∗
∗
Static drain-source on-state
resistance
R
DS (on)
−
30
42
m
Ω
I
D
=
6.0A, V
GS
=
4.5V
−
33
47
I
D
=
6.0A, V
GS
=
4V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗
Pulsed
Y
fs
4.0
−
−
S
I
D
=
6.0A, V
DS
=
10V
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
−
520
−
pF
V
DS
=
10V
−
150
95
−
pF
V
GS
=
0V
−
−
pF
=
1MHz
−
9
−
ns
I
D
=
3A, V
DD
15V
∗
∗
∗
∗
∗
∗
∗
−
21
−
ns
V
GS
=
10V
−
36
−
ns
R
L
=
5.0
Ω
−
13
−
ns
R
G
=
10
Ω
−
7.2
10.1 nC
V
DD
15V
−
1.8
−
nC
V
GS
=
5V
−
2.8
−
nC
I
D
=
6.0A
z
Body diode characteristics (Source-Drain Characteristics)
(Ta=25
°
C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
∗
Pulsed
V
SD
−
−
1.2
V
I
S
=
6.4A, V
GS
=
0V
∗
2/5
f
SP8M8
Transistors
P-ch
z
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
I
GSS
Min.
−
Typ. Max. Unit
Conditions
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
−
−
10
µ
A
V
GS
= −
20V, V
DS
=
0V
V
(BR) DSS
−
30
−
−
V
I
D
= −
1mA, V
GS
=
0V
I
DSS
−
−
−
1
µ
A
V
DS
= −
30V, V
GS
=
0V
V
GS (th)
−
1.0
−−
2.5
V
V
DS
= −
10V, I
D
= −
1mA
−
40
56
I
D
= −
4.5A, V
GS
= −
10V
∗
∗
∗
∗
Static drain-source on-state
resistance
R
DS (on)
−
57
80
m
Ω
I
D
= −
2.5A, V
GS
= −
4.5V
−
65
90
I
D
= −
2.5A, V
GS
= −
4.0V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗
Pulsed
Y
fs
3.5
−
−
S
I
D
= −
2.5A, V
DS
= −
10V
C
iss
−
850
−
pF
V
DS
= −
10V
C
oss
−
190
120
−
pF
V
GS
=
0V
C
rss
−
−
pF
=
1MHz
t
d (on)
−
10
−
ns
I
D
= −
2.5A, V
DD
−
15V
∗
∗
∗
∗
∗
∗
∗
t
r
−
25
−
ns
V
GS
= −
10V
t
d (off)
−
60
−
ns
R
L
=
6.0
Ω
t
f
−
25
−
ns
R
G
=
10
Ω
Q
g
−
8.5
−
nC
V
DD
−
15V
Q
gs
−
2.5
−
nC
V
GS
= −
5V
Q
gd
−
3.0
−
nC
I
D
= −
4.5A
z
Body diode characteristics (Source-Drain Characteristics)
(Ta=25
°
C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
∗
Pulsed
V
SD
−
−
−
1.2
V
I
S
= −
1.6A, V
GS
=
0V
∗
3/5
f
SP8M8
Transistors
N-ch
z
Electrical characteristic curves
C
f
=
1MHz
V
GS
=
=
25
°
1000
Ta
=
25
°
C
V
DD
=
15V
V
GS
=
10V
R
G
=
10
Ω
Pulsed
10
Ta
=
25
°
C
V
DD
=
15V
I
D
=
6A
R
G
=
10
Ω
Pulsed
t
f
9
0V
8
7
1000
100
t
d (off)
6
C
iss
5
4
t
r
100
C
oss
10
3
C
rss
t
d (on)
2
1
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.01
0.1
1
10
0
0
2 4 6 8 10 12 14
TOTAL GATE CHARGE : Qg
(nC)
DRAIN CURRENT : I
D
(A)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
10
200
10
V
DS
=
10V
Pulsed
Ta
=
25
°
C
Pulsed
V
GS
=
0V
Pulsed
Ta
=
125
°
C
1
150
Ta
=
75
°
C
Ta
=
125
°
C
Ta
=
25
°
C
Ta
=
75
°
C
I
D
=
6A
1
Ta
= −
25
°
C
Ta
=
25
C
I
D
=
3A
Ta
= −
25
°
C
0.1
100
0.1
0.01
50
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
02468 0 2 4 6
GATE-SOURCE VOLTAGE : V
GS
(V)
0.01
0.0
0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
1000
1000
1000
10V
Pulsed
4.5V
Pulsed
4V
Pulsed
Ta
=
125
°
C
Ta
=
125
°
C
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
75
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
=
25
C
100
Ta
=
25
°
C
100
Ta
= −
25
C
100
Ta
= −
25
°
C
Ta
= −
25
°
C
10
10
10
1
1
1
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
Ι
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙ
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙΙ
)
4/5
10000
Ta
1
°
V
GS
=
V
GS
=
V
GS
=
°
°
SP8M8
Transistors
P-ch
z
Electrical characteristic curves
10000
8
Ta
=
25
°
C
f
=
1MHz
V
GS
=
Ta
=
25
°
C
V
DD
= −
15V
V
GS
= −
10V
R
G
=
10
Ω
Pulsed
C
V
DD
= −
15V
I
D
= −
4.5A
R
G
=
10
Ω
Pulsed
=
25
°
0V
7
1000
6
1000
C
iss
t
f
5
t
d (off)
100
4
100
C
oss
3
C
rss
10
t
d (on)
2
t
r
1
10
1
0
0.01
0.1
1
10
100
0.01
0.1
1
10
01234567890
TOTAL GATE CHARGE : Qg
(nC)
DRAIN-SOURCE VOLTAGE :
−
V
DS
(V)
DRAIN CURRENT :
−
I
D
(A)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
10
200
10
10V
Pulsed
= −
Ta
=
25
°
C
Pulsed
V
GS
=
0V
Pulsed
Ta
=
125
°
C
1
Ta
=
125
°
C
150
4.5A
I
D
=−
2.0A
=−
Ta
=
75
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
=
25
°
C
1
Ta
= −
25
°
C
Ta
= −
25
°
C
0.1
100
0.1
0.01
50
0.001
0
0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE :
−
V
GS
(V)
024680246
GATE-SOURCE VOLTAGE :
0.0
0.5
1.0
1.5
−
V
GS
(V)
SOURCE-DRAIN VOLTAGE :
−
V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
1000
1000
1000
V
GS
= −
10V
Pulsed
V
GS
= −
4.5V
Pulsed
V
GS
= −
4V
Pulsed
Ta
=
125
°
C
Ta
=
125
°
C
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
75
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
25
°
C
Ta
= −
25
C
Ta
= −
25
C
100
Ta
= −
25
C
100
100
10
10
10
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN CURRENT :
−
I
D
(A)
DRAIN CURRENT :
−
I
D
(A)
DRAIN CURRENT :
−
I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙ
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙΙ
)
5/5
10000
Ta
V
DS
I
D
°
°
°
Ι
Plik z chomika:
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