STS7PF30L.pdf

STS7PF30L

P-CHANNEL 30V - 0.016

-7ASO-8

STripFET™ II POWER MOSFET

PRELIMINARY DATA

TYPE

V DSS

R DS(on)

I D

STS7PF30L

30 V

< 0.021

TYPICAL R DS (on) = 0.016

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

LOW THRESHOLD DRIVE

SO-8

DESCRIPTION

This Power Mosfet is the latest development of ST-

Microelectronics unique “Single Feature Size ™”

strip-based process. The resulting transistor shows

extremely high packing density for low on-resis-

tance, rugged avalanche characteristics and less

critical alignment steps therefore a remarkable man-

ufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

POWER MANAGEMENT IN CELLULAR

PHONES

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

V DS

Drain-source Voltage (V GS =0)

V DGR

Drain-gate Voltage (R GS =20k

)

V GS

Gate- source Voltage

±20

I D

Drain Current (continuous) at T C = 25°C

I D

Drain Current (continuous) at T C = 100°C

4.4

I DM

Drain Current (pulsed)

P TOT

Total Dissipation at T C = 25°C

2.5

( l ) Pulse width limited by safe operating area

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

December 2002

1/6

STS7PF30L

THERMAL DATA

Rthj-amb(#) Thermal Resistance Junction-ambient Max

°C/W

Maximum Lead Temperature For Soldering Purpose Typ

150

°C

T stg

Storage Temperature

–55 to 150

°C

(#) When mounted on 1 inch 2 FR4 Board, 2 oz of Cu and t

10s

ELECTRICAL CHARACTERISTICS (T J = 25 °C UNLESS OTHERRWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V (BR)DSS

Drain-source

Breakdown Voltage

I D = 250 µA, V GS = 0

I DSS

Zero Gate Voltage

Drain Current (V GS =0)

V DS = Max Rating

µA

V DS = Max Rating, T C = 125 °C

µA

I GSS

Gate-body Leakage

Current (V DS =0)

V GS = ± 20V

±100

ON (1)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V GS(th)

Gate Threshold Voltage

V DS =V GS ,I D = 250µA

1.6

2.5

R DS(on)

Static Drain-source On

Resistance

V GS =10V,I D = 3.5A

0.011

0.016

0.021

V GS = 4.5V, I D = 3.5A

0.016

0.022

0.028

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

g fs

Forward Transconductance

V DS =10V,I D = 3.5A

C iss

Input Capacitance

V DS =25V,f=1MHz,V GS =0

2600

C oss

Output Capacitance

523

C rss

Reverse Transfer

Capacitance

174

2/6

STS7PF30L

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON(2)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

t d(on)

Turn-on Delay Time

V DD =15V,I D = 3.5A

R G = 4.7

V GS =4.5V

(Resistive Load, Figure 3)

t r

Rise Time

Q g

Q gs

Q gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V DD =15V,I D =7A,

V GS = 4.5V

8.8

SWITCHING OFF(2)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

t d(off)

t f

Turn-off-Delay Time

Fall Time

V GS = 4.5 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE (2)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I SD

Source-drain Current

I SDM (1)

Source-drain Current (pulsed)

V SD (2)

Forward On Voltage

I SD = 7 A, V GS =0

1.2

t rr

Q rr

I RRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

I SD = 7A, di/dt = 100A/µs,

V DD =24V,T j = 150°C

(see test circuit, Figure 5)

2.3

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3/6

V DD =15 V, I D = 3.5 A,

R G =4.7

STS7PF30L

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

4/6

STS7PF30L

SO-8 MECHANICAL DATA

DIM.

inch

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

1.75

0.068

0.1

0.25

0.003

0.009

1.65

0.064

0.65

0.85

0.025

0.033

0.35

0.48

0.013

0.018

0.19

0.25

0.007

0.010

0.25

0.5

0.010

0.019

45 (typ.)

4.8

5.0

0.188

0.196

5.8

6.2

0.228

0.244

1.27

0.050

3.81

0.150

3.8

4.0

0.14

0.157

0.4

1.27

0.015

0.050

0.6

0.023

8 (max.)

0016023

5/6

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