SI9435.PDF

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Si9435DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
V DS (V)
r DS(on) (
)
I D (A)
0.055 @ V GS = –10 V
5.1
–30
0.07 @ V GS = –6 V
4.6
0.105 @ V GS = –4.5 V
3.6
SSS
SO-8
S
1
8
D
G
S
2
3
7
D
S
6
D
G
4
5
D
Top View
D D D
P-Channel MOSFET
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
–30
V
V
Gate-Source Voltage
V GS
20
Continuous Drain Current (T J = 150
C) a
T A = 25
C
I D
5.1
I D
C) a
T A = 70
C
4.6
A
A
Pulsed Drain Current
I DM
20
Continuous Source Current (Diode Conduction) a
I S
–2.6
Maximum Power Dissipation a
T A = 25 C
2.5
Maximum Power Dissipation a
P D
W
P D
W
T A = 70
C
1.6
Operating Junction and Storage Temperature Range
T J , T stg
–55 to 150
C
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient a
R thJA
50
C/W
Notes
a. Surface Mounted on FR4 Board, t 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70126
S-00652—Rev. J, 27-Mar-00
www.vishay.com
FaxBack 408-970-5600
1
30
Continuous Drain Current (T J = 150
A
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Si9435DY
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ a
Max
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = –250 A
–1.0
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS = 20 V
100
nA
Zero Gate Voltage Drain Current
I DSS
V DS = –24 V, V GS = 0 V
–1
A
I DSS
V DS = –15 V, V GS = 0 V, T J = 70 C
–5
V DS
–10 V, V GS = –10 V
–20
On-State Drain Current b
On-State Drain Current b
I D(on)
A
I D(on)
A
V DS –5 V, V GS = –4.5 V
–5
V GS = –10 V, I D = –4.6 A
0.037
0.055
V GS = –6 V, I D = –4.1 A
Drain-Source On-State Resistance b
OS R i
b
r DS(on)
0.047
0.07
V GS = –4.5 V, I D = –2.0 A
0.060
0.105
Forward Transconductance b
g fs
V DS = –15 V, I D = –4.6 A
9.0
S
Diode Forward Voltage b
V SD
I S = –2.6 A, V GS = 0 V
–0.88
–1.2
V
Dynamic a
Total Gate Charge
Q g
27
40
Gate-Source Charge
Q gs
V DS = –15 V, V GS = –10 V, I D = –4.6 A
15 V V
10 V I
4 6 A
4
nC
Gate-Drain Charge
Q gd
6.3
Turn-On Delay Time
t d(on)
14
30
Rise Time
t r
V DD = –15 V, R L = 15
15 V R15
13
60
DD , L
I D –1 A, V GEN = –10 V, R G = 6
I
1 A V
10 V R
6
Turn-Off Delay Time
t d(off)
58
120
ns
Fall Time
t f
21
100
Source-Drain Reverse Recovery Time
t rr
I F = 2.6 A, di/dt = 100 A/ s
65
100
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300
s, duty cycle
2%.
www.vishay.com
FaxBack 408-970-5600
Document Number: 70126
S-00652—Rev. J, 27-Mar-00
2
Zero Gate Voltage Drain Current
A
Di S
V
C
V
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Si9435DY
Vishay Siliconix
Output Characteristics
Transfer Characteristics
20
20
V GS = 10, 9, 8, 7, 6, 5 V
16
16
12
4 V
12
8
8
T C = 125 C
4
3 V
4
25 C
–55 C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
V DS – Drain-to-Source Voltage (V)
V GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.16
3000
2500
0.12
2000
0.08
V GS = 4.5 V
1500
C iss
6 V
1000
C oss
0.04
10 V
500
C rss
0
0
0
4
8
12
16
20
0
4
8
12
16
20
I D – Drain Current (A)
V DS – Drain-to-Source Voltage (V)
10
Gate Charge
2.0
On-Resistance vs. Junction Temperature
8
V DS = 15 V
I D = 4.6 A
1.6
V GS = 10 V
I D = 4.6 A
6
1.2
4
0.8
2
0.4
0
0
0
5
10
15
20
25
30
–50 –25
0
25
50
75
100 125 150
Q g – Total Gate Charge (nC)
T J – Junction Temperature ( C)
Document Number: 70126
S-00652—Rev. J, 27-Mar-00
www.vishay.com
FaxBack 408-970-5600
3
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Si9435DY
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
0.20
T J = 150 C
0.16
10
I D = 4.6 A
25 C
0.12
0.08
0.04
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V SD – Source-to-Drain Voltage (V)
V GS – Gate-to-Source Voltage (V)
0.8
Threshold Voltage
70
Single Pulse Power
I D = 250
m
A
60
0.4
50
40
0.0
30
–0.4
20
10
–0.8
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
T J – Temperature (
C)
Time (sec)
2
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
Notes :
0.1
0.1
P DM
t 1
t 2
0.05
t 1
t 2
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 50
C/W
0.02
3. T JM – T A = P DM Z thJA (t)
Single Pulse
4. Surface Mounted
0.01
10 –4
10 –3
10 –2
10 –1
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
FaxBack 408-970-5600
Document Number: 70126
S-00652—Rev. J, 27-Mar-00
4
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