TL082a.pdf

August 2000

TL082

Wide Bandwidth Dual JFET Input Operational Amplifier

General Description

These devices are low cost, high speed, dual JFET input op-

erational amplifiers with an internally trimmed input offset

voltage (BI-FET II ™ technology). They require low supply

current yet maintain a large gain bandwidth product and fast

slew rate. In addition, well matched high voltage JFET input

devices provide very low input bias and offset currents. The

TL082 is pin compatible with the standard LM1558 allowing

designers to immediately upgrade the overall performance of

existing LM1558 and most LM358 designs.

These amplifiers may be used in applications such as high

speed integrators, fast D/A converters, sample and hold cir-

cuits and many other circuits requiring low input offset volt-

age, low input bias current, high input impedance, high slew

rate and wide bandwidth. The devices also exhibit low noise

and offset voltage drift.

Features

n Internally trimmed offset voltage:

15 mV

n Low input bias current:

50 pA

n Low input noise voltage:

16nV/ Ö Hz

n Low input noise current:

0.01 pA/ Ö Hz

n Wide gain bandwidth:

4 MHz

n High slew rate:

13 V/µs

n Low supply current:

3.6 mA

n High input impedance:

10 12

n Low total harmonic distortion:

0.02%

n Low 1/f noise corner:

50 Hz

n Fast settling time to 0.01%:

2 µs

Typical Connection

Connection Diagram

DIP/SO Package (Top View)

DS008357-1

DS008357-3

Order Number TL082CM or TL082CP

See NS Package Number M08A or N08E

Simplified Schematic

DS008357-2

BI-FET II ™ is a trademark of National Semiconductor Corp.

DS008357

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage

Input Voltage Range (Note 3)

± 15V

Output Short Circuit Duration

Continuous

Storage Temperature Range

−65˚C to +150˚C

Lead Temp. (Soldering, 10 seconds)

260˚C

± 18V

ESD rating to be determined.

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage

to the device may occur. Operating Ratings indicate conditions for which the

device is functional, but do not guarantee specific performance limits.

Power Dissipation

(Note 2)

Operating Temperature Range

0˚C to +70˚C

T j(MAX)

150˚C

Differential Input Voltage

± 30V

DC Electrical Characteristics (Note 5)

Symbol

Parameter

Conditions

TL082C

Units

Min

Typ

Max

V OS

Input Offset Voltage

R S =10k W ,T A = 25˚C

Over Temperature

V OS /

Average TC of Input Offset

R S =10k

µV/˚C

Voltage

I OS

Input Offset Current

T j = 25˚C, (Notes 5, 6)

200

T j

70˚C

I B

Input Bias Current

T j = 25˚C, (Notes 5, 6)

400

T j

70˚C

R IN

Input Resistance

T j = 25˚C

10 12

A VOL

Large Signal Voltage Gain

V S = ± 15V, T A = 25˚C

100

V/mV

V O = ± 10V, R L =2k W

Over Temperature

V/mV

V O

Output Voltage Swing

V S = ± 15V, R L =10k W

± 12

± 13.5

V CM

Input Common-Mode Voltage

V S = ± 15V

± 11

+15

Range

−12

CMRR

Common-Mode Rejection Ratio

R S

10 k

100

PSRR

Supply Voltage Rejection Ratio

(Note 7)

100

I S

Supply Current

3.6

5.6

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AC Electrical Characteristics (Note 5)

Symbol

Parameter

Conditions

TL082C

Units

Min

Typ

Max

Amplifier to Amplifier Coupling

T A = 25˚C, f = 1Hz-

−120

20 kHz (Input Referred)

Slew Rate

V S = ± 15V, T A = 25˚C

V/µs

GBW

Gain Bandwidth Product

V S = ± 15V, T A = 25˚C

MHz

e n

Equivalent Input Noise Voltage

T A = 25˚C, R S = 100

nV/ Ö Hz

f = 1000 Hz

i n

Equivalent Input Noise Current

T j = 25˚C, f = 1000 Hz

0.01

pA/ Ö Hz

THD

Total Harmonic Distortion

A V = +10, R L = 10k,

V O =20Vp−p,

BW = 20 Hz−20 kHz

< 0.02

Note 2: For operating at elevated temperature, the device must be derated based on a thermal resistance of 115˚C/W junction to ambient for the N package.

Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.

Note 4: The power dissipation limit, however, cannot be exceeded.

Note 5: These specifications apply for V S = ± 15V and 0˚C £ T A

jA P D where

jA is the thermal resistance from junction to ambient. Use of a heat sink is recom-

mended if input bias current is to be kept to a minimum.

Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice.

V S = ± 6V to ± 15V.

Typical Performance Characteristics

Input Bias Current

DS008357-18

DS008357-19

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+70˚C. V OS ,I B and I OS are measured at V CM =0.

Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T j . Due to the limited

production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient

temperature as a result of internal power dissipation, P D .T j =T A +

Typical Performance Characteristics (Continued)

Supply Current

Positive Common-Mode Input

Voltage Limit

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DS008357-21

Negative Common-Mode Input

Voltage Limit

Positive Current Limit

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DS008357-22

Negative Current Limit

Voltage Swing

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DS008357-25

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Typical Performance Characteristics (Continued)

Output Voltage Swing

Gain Bandwidth

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DS008357-27

Bode Plot

Slew Rate

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DS008357-29

Distortion vs Frequency

Undistorted Output

Voltage Swing

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