BU505.PDF

(68 KB) Pobierz
11068962 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
BU505; BU505D
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
11068962.049.png
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
DESCRIPTION
High-voltage, high-speed switching
NPN power transistor in a TO-220AB
package. The BU505D has an
integrated efficiency diode.
2
2
APPLICATIONS
1
1
·
Horizontal deflection circuits of
colour television receivers.
MBB008
3
3
MBB077
PINNING
MBK106
123
a. BU505.
b. BU505D.
PIN
DESCRIPTION
1
base
2
collector; connected to
mounting base
Fig.1 Simplified outline (TO-220AB) and symbols.
3
emitter
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V CESM
collector-emitter peak voltage V BE =0
-
1500
V
V CEO
collector-emitter voltage
open base
-
700
V
V CEsat
collector-emitter saturation
voltage
I C = 2 A; I B = 900 mA
-
1
V
V F
diode forward voltage
(BU505D)
I F =2A
-
1.8
V
I Csat
collector saturation current
-
2
A
I C
collector current (DC)
see Fig.3
-
2.5
A
I CM
collector current (peak value)
see Fig.3
-
4
A
P tot
total power dissipation
T mb £
25
°
C; see Fig.4
-
75
W
t f
fall time
inductive load; see Fig.7
0.9
-
m s
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R th j-mb
thermal resistance from junction to mounting base
1.67
K/W
1997 Aug 13
1
11068962.051.png
 
11068962.052.png
 
11068962.001.png
 
11068962.002.png 11068962.003.png 11068962.004.png 11068962.005.png 11068962.006.png 11068962.007.png 11068962.008.png 11068962.009.png 11068962.010.png 11068962.011.png 11068962.012.png 11068962.013.png 11068962.014.png
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CESM
collector-emitter peak voltage
V BE =0
-
1500
V
V CEO
collector-emitter voltage
open base
-
700
V
I Csat
collector saturation current
-
2
A
I C
collector current (DC)
see Fig.3
-
2.5
A
I CM
collector current (peak value)
see Fig.3
-
4
A
I B
base current (DC)
-
2
A
I BM
base current (peak value)
-
4
A
P tot
total power dissipation
T mb £
25
°
C; see Fig.4
-
75
W
T stg
storage temperature
-
65
+150
C
T j
junction temperature
-
150
° C
MGB859
10
handbook, full pagewidth
Z th j
mb
(K/W)
-
d = 1
0.75
0.50
0.33
0.20
0.10
0.05
1
10 - 1
0.02
0.01
0
10 - 2
10 - 2
10 - 1
1
10
t p (ms)
10 2
Fig.2 Transient thermal impedance.
1997 Aug 13
2
°
11068962.015.png 11068962.016.png 11068962.017.png 11068962.018.png 11068962.019.png 11068962.020.png 11068962.021.png 11068962.022.png 11068962.023.png 11068962.024.png 11068962.025.png 11068962.026.png 11068962.027.png 11068962.028.png 11068962.029.png 11068962.030.png 11068962.031.png
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V CEOsust
collector-emitter sustaining voltage see Figs 5 and 6
700
-
-
V
V CEsat
collector-emitter saturation voltage I C = 2 A; I B = 900 mA
-
-
1
V
V BEsat
base-emitter saturation voltage
I C = 2 A; I B = 900 mA
-
-
1.3
V
V EBO
emitter-base voltage
I E = 10 mA; I C =0
-
6
-
V
V F
diode forward voltage (BU505D)
I F =2A
-
-
1.8
V
I CES
collector-emitter cut-off current
V CE =V CESmax ; V BE =0;
note 1
-
-
0.15
mA
V CE =V CESmax ; V BE =0;
T j = 125
-
-
1
mA
°
C; note 1
I EBO
emitter-base cut-off current
V EB =5V; I C =0
-
-
1
mA
h FE
DC current gain
V CE =5V; I C = 100 mA
6
13
30
f T
transition frequency
V CE =5V; I C = 100 mA;
f = 5 MHz
-
7
-
MHz
C c
collector capacitance
V CB =10V; I E =i e =0;
f = 1 MHz
-
65
-
pF
Switching times in horizontal deflection circuit (see Fig.7)
t s
storage time
I CM = 2 A; I B(end) = 900 mA;
V dr = - 4V
L B =10
m
H
-
6.5
-
m
s
L B =15
m
H
-
7.5
-
m
s
L B =25
m
H
-
9.5
-
m
s
t f
fall time
I CM = 2 A; I B(end) = 900 mA;
V dr =
4V
L B =10
m
H
-
0.9
-
m
s
L B =15
m
H
-
0.9
-
m
s
L B =25 m H
-
0.85
-
m s
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
3
-
11068962.032.png
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
10 2
MGB942
handbook, full pagewidth
I C
(A)
10
I CM max
d
= 0.01
I C max
t p =
10
m
s
II
(1)
20
m
s
1
50
m
s
100 m s
I
200 m s
500
m
s
10 - 1
(2)
2 ms
10 ms
DC
10 - 2
10 2
10 3
10 4
10
V CE (V)
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
(1) P tot max and P tot peak max lines.
(2) Second breakdown limits.
Fig.3 Forward bias SOAR.
1997 Aug 13
4
T mb =25
°
11068962.033.png 11068962.034.png 11068962.035.png 11068962.036.png 11068962.037.png 11068962.038.png 11068962.039.png 11068962.040.png 11068962.041.png 11068962.042.png 11068962.043.png 11068962.044.png 11068962.045.png 11068962.046.png 11068962.047.png 11068962.048.png 11068962.050.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin