BU505F.PDF

(74 KB) Pobierz
11068963 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
BU505F; BU505DF
Silicon diffused power transistors
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06
1997 Aug 13
11068963.051.png
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
The BU505DF has an integrated
efficiency diode.
2
2
APPLICATIONS
1
1
·
Horizontal deflection circuits of
colour television receivers.
MBB008
3
MBB077
3
PINNING
a. BU505F.
b. BU505DF.
PIN
DESCRIPTION
123
1 base
2 collector
3 emitter
mb mounting base; electrically
isolated from all pins
Front view
MBC668
Fig.1 Simplified outline (SOT186) and symbols.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V CESM
collector-emitter peak voltage V BE =0
-
1500
V
V CEO
collector-emitter voltage
open base
-
700
V
V CEsat
collector-emitter saturation
voltage
I C = 2 A; I B = 900 mA; see Fig.8
-
1
V
V F
diode forward voltage
(BU505DF)
I F =2A
-
1.8
V
I Csat
collector saturation current
-
2
A
I C
collector current (DC)
see Figs 4 and 5
-
2.5
A
I CM
collector current (peak value) see Figs 4 and 5
-
4
A
P tot
total power dissipation
T h £
25
°
C; see Fig.2
-
20
W
t f
fall time
inductive load; see Fig.10
0.7
-
m
s
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-h
thermal resistance from junction to external heatsink note 1
6.35
K/W
note 2
3.85
K/W
R th j-a
thermal resistance from junction to ambient
55
K/W
Notes
1. Mounted without heatsink compound and 30
±
5 N force on centre of package.
2. Mounted with heatsink compound and 30
±
5 N force on centre of package.
1997 Aug 13
1
11068963.062.png 11068963.067.png 11068963.068.png 11068963.001.png 11068963.002.png 11068963.003.png 11068963.004.png 11068963.005.png 11068963.006.png 11068963.007.png 11068963.008.png 11068963.009.png 11068963.010.png 11068963.011.png 11068963.012.png 11068963.013.png 11068963.014.png 11068963.015.png
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V isolM
isolation voltage from all terminals to external heatsink (peak value)
-
1500
V
C isol
isolation capacitance from collector to external heatsink
12
-
pF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CESM
collector-emitter peak voltage
V BE =0
-
1500
V
V CEO
collector-emitter voltage
open base
-
700
V
I Csat
collector saturation current
-
2
A
I C
collector current (DC)
see Figs 4 and 5
-
2.5
A
I CM
collector current (peak value)
see Figs 4 and 5
-
4
A
I B
base current (DC)
-
2
A
I BM
base current (peak value)
-
4
A
P tot
total power dissipation
T h £
25
°
C; see Fig.2
-
20
W
T stg
storage temperature
-
65
+150
C
T j
junction temperature
-
150
C
MGK674
10 2
MGB875
120
handbook, halfpage
handbook, halfpage
P tot max
(%)
h FE
80
10
(1)
(2)
40
0
1
0
50
100
150
10 - 2
10 - 1
T h ( o C)
1
I C (A)
10
C.
(1) V CE =5V.
(2) V CE =1V.
°
Fig.2 Power derating curve.
Fig.3 DC current gain; typical values.
1997 Aug 13
2
°
°
T j =25
11068963.016.png 11068963.017.png 11068963.018.png 11068963.019.png 11068963.020.png 11068963.021.png 11068963.022.png 11068963.023.png 11068963.024.png 11068963.025.png 11068963.026.png 11068963.027.png 11068963.028.png 11068963.029.png 11068963.030.png 11068963.031.png 11068963.032.png 11068963.033.png 11068963.034.png 11068963.035.png 11068963.036.png 11068963.037.png 11068963.038.png 11068963.039.png 11068963.040.png 11068963.041.png 11068963.042.png 11068963.043.png 11068963.044.png 11068963.045.png 11068963.046.png
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V CEOsust collector-emitter sustaining voltage I C = 0.1 A; I B = 0; L = 25 mH;
see Figs 6 and 7
700
-
-
V
V CEsat
collector-emitter saturation voltage I C = 2 A; I B = 900 mA;
see Fig.8
-
-
1
V
V BEsat
base-emitter saturation voltage
I C = 2 A; I B = 900 mA;
see Fig.9
-
-
1.3
V
V F
diode forward voltage (BU505DF) I F =2A
-
-
1.8
V
I CES
collector-emitter cut-off current
V CE =V CESmax ; V BE =0;
note 1
-
-
0.15
mA
V CE =V CESmax ; V BE =0;
T j = 125 ° C; note 1
-
-
1
mA
I EBO
emitter-base cut-off current
V EB =5V; I C =0
-
-
1
mA
h FE
DC current gain
see Fig.3
V CE = 5 V; I C = 2 A
2.22
-
-
V CE = 5 V; I C = 100 mA
6
13
30
f T
transition frequency
V CE =5V; I C = 100 mA;
f=1MHz
-
7
-
MHz
C c
collector capacitance
V CB = 10 V; I E =i e =0;
f=1MHz
-
65
-
pF
Switching times in horizontal deflection circuit (see Fig.5)
t s
storage time
I CM = 2 A; I B(end) = 900 mA;
V dr =
4V
L B =10 m H
-
-
6.5
-
m s
L B =15
m
H
-
7.5
-
m
s
L B =25
m
H
-
9.5
-
m
s
t f
fall time
I CM = 2 A; I B(end) = 900 mA;
V dr = - 4V
L B =10
m
H
-
0.9
-
m
s
L B =15
m
H
-
0.9
-
m
s
L B =25
m
H
-
0.85
-
m
s
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
3
11068963.047.png
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
10 2
MGB931
handbook, full pagewidth
I C
(A)
10
I CM max
I C max
II
1
10 - 1
I
10 - 2
10 - 3
10 - 4
10 2
10 3
10 4
1
10
V CE (V)
Mounted without heatsink compound and 30
±
5 N force on centre of package.
T h =25 ° C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.4 Forward bias SOAR.
1997 Aug 13
4
11068963.048.png 11068963.049.png 11068963.050.png 11068963.052.png 11068963.053.png 11068963.054.png 11068963.055.png 11068963.056.png 11068963.057.png 11068963.058.png 11068963.059.png 11068963.060.png 11068963.061.png 11068963.063.png 11068963.064.png 11068963.065.png 11068963.066.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin