SI4925BDY.pdf

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Si4925BDY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V)
FEATURES
TrenchFET
Power MOSFET
r DS(on) (
)
I D (A)
Advanced High Cell Density Process
APPLICATIONS
0.025 @ V GS = - 10 V
- 7.1
- 30
Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
0.041 @ V GS = - 4.5 V
- 5.5
S 1
S 2
SO-8
S 1
1
8
D 1
G 1
G 2
G 1
2
7
D 1
S 2
3
4
6
D 2
G 2
5
D 2
Top View
D 1
D 2
Ordering Information: Si4925BDY
Si4925BDY-T1 (with Tape and Reel)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V DS
-30
V
Gate-Source Voltage
V GS
20
T A = 25
C
- 7.1
- 5.3
C) a
Continuous Drain Current (T J = 150
C) a
I D
T A = 70
C
- 5.7
- 4.3
A
A
Pulsed Drain Current
I DM
-40
continuous Source Current (Diode Conduction) a
I S
- 1.7
- 0.9
T A = 25
C
2.0
1.1
Maximum Power Dissipation a
P D
W
T A = 70
C
1.3
0.7
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
50
62.5
Maximum Junction-to-Ambient a
J i tAbi a
R thJA
Steady State
85
110
C/W
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R thJF
30
40
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
1
- 30
V
Continuous Drain Current (T J = 150
I D
Maximum Power Dissipation a
P D
W
Mi
R
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Si4925BDY
Vishay Siliconix
SPECIFICATIONS (T J = 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250
A
-1
-3
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS =
20 V
100
nA
Zero Gate Voltage Drain Current
I DSS
V DS = - 30 V, V GS = 0 V
-1
A
V DS = - 30 V, V GS = 0 V, T J = 55
C
-25
On-State Drain Current a
I D(on)
V DS = - 5 V, V GS = - 10 V
-40
A
V GS = - 10 V, I D = - 7.1 A
0.020
0.025
Drain-Source On-State Resistance a
r DS(on)
0.041
V GS = - 4.5 V, I D = - 5.5 A
0.033
Forward Transconductance a
g fs
V DS = - 10 V, I D = - 7.1 A
20
S
Diode Forward Voltage a
V SD
I S = - 1.7 A, V GS = 0 V
- 0.8
- 1.2
V
Dynamic b
Total Gate Charge
Q g
33
50
Gate-Source Charge
Q gs
V DS = - 15 V, V GS = - 10 V, I D = - 7.1 A
5.4
nC
Gate-Drain Charge
Q gd
8.9
Turn-On Delay Time
t d(on)
9
15
Rise Time
t r
V DD = - 15 V, R L = 15
12
20
Turn-Off Delay Time
t d(off)
I D
- 1 A, V GEN = - 10 V, R G = 6
60
90
ns
Fall Time
t f
34
50
Source-Drain Reverse Recovery Time
t rr
I F = - 1.7 A, di/dt = 100 A/
s
30
60
2%.
b. Guaranteed by design, not subject to production testing.
300
s, duty cycle
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
T C = - 55
C
V GS = 10 thru 5 V
25
C
30
30
4 V
125
C
20
20
10
10
3, 2 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
Zero Gate Voltage Drain Current
I DSS
A
Drain Source On State Resistance a
r DS( )
V DD = - 15 V, R L = 15
Notes
a. Pulse test; pulse width
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Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.08
2500
2000
0.06
C iss
1500
0.04
V GS = 4.5 V
1000
V GS = 10 V
0.02
500
C oss
C rss
0.00
0
0
10
20
30
40
0
6
12
18
24
30
I D - Drain Current (A)
V DS - Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
V DS = 15 V
I D = 7.1 A
V GS = 10 V
I D = 7.1 A
8
1.4
6
1.2
4
1.0
2
0.8
0
0.6
0
5
10
15
20
25
30
35
40
- 50 - 25
0
25
50
75
100 125 150
Q g - Total Gate Charge (nC)
T J - Junction Temperature (
C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
0.08
T J = 150
C
0.06
I D = 7.1 A
10
I D = 3 A
0.04
T J = 25
C
0.02
1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V SD - Source-to-Drain Voltage (V)
V GS - Gate-to-Source Voltage (V)
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
3
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Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
30
0.6
25
I D = 250
A
20
0.4
0.2
15
0.0
10
- 0.2
5
- 0.4
0
- 50 - 25
0
25
50
75
100 125 150
10 -2
10 -1
1
10
100
600
T J - Temperature (
C)
Time (sec)
100
Safe Operating Area
r DS(on) Limited
I DM Limited
P(t) = 0.0001
10
P(t) = 0.001
1
P(t) = 0.01
I D(on)
Limited
P(t) = 0.1
0.1
C
Single Pulse
P(t) = 10
dc
BV DSS Limited
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P DM
0.05
t 1
t 2
t 1
t 2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 85
C/W
Single Pulse
3. T JM - T A = P DM Z thJA (t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (sec)
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4
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
T A = 25
P(t) = 1
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Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
www.vishay.com
5
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