TPC8203.pdf

TPC8203

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

TPC8203

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

Unit: mm

Low drain−source ON resistance : R DS (ON) = 14 mΩ (typ.)

High forward transfer admittance : |Y fs | = 8 S (typ.)

Low leakage current : I DSS = 10 µA (max) (V DS = 30 V)

Enhancement−mode : V th = 0.8~2.5 V (V DS = 10 V, I D = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

V DSS

Drain−gate voltage (R GS = 20 kΩ)

V DGR

Gate−source vol tage

V GSS

±20

D C

(Note 1)

I D

JEDEC ―

Drain current

Pulse

(Note 1)

I DP

Drain power

dissipation

(t = 10 s)

Single-device

operation (Note 3a)

P D (1)

1.5

JEITA

―

Single-devece value

at dual operation

TOSHIBA

2-6J1E

P D (2)

1.0

(Note 2a)

(Note 3b)

Weight: 0.080 g (typ.)

Drain power

dissipation

(t = 10 s)

Single-device

operation (Note 3a)

P D (1)

0.75

Single-devece value

at dual operation

Circuit Configuration

(Note 2b)

P D 2)

0.45

(Note 3b)

Single pulse avalanche energy

(Note 4)

E AS

46.8

Avalanche current

I AR

Repetitive avalanche energy

E AR

0.10

(Note 2a, Note 3b, Note 5)

Channel temperature

T ch

150 ℃

Storage temperature range

T stg −55 ～ 150 ℃

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)

and (Note 5), please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

2003-02-20

Small footprint due to small and thin package

TPC8203

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Single-device operation

(Note 3a)

R th (ch-a) (1)

83.3

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2a) Single-device value at

dual operation

R th (ch-a) (2)

125

(Note 3b)

°C/W

Single-device operation

(Note 3a)

R th (ch-a) (1)

167

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2b) Single-device value at

dual operation

R th (ch-a) (2)

278

(Note 3b)

Marking

TPC8203

Type

※

Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

a) Device mounted on a glass-epoxy board (a)

b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(a)

(b)

Note 3:

a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.)

b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.)

Note 4: V DD = 24 V, T ch = 25°C (Initial), L = 1.0 mH, R G = 25 Ω, I AR = 6.0 A

Note 5: Repetitive rating: pulse width limited by maximum channel temperature

Note 6:

on lower left of the marking indicates Pin 1.

※ Weekly code:(Three digits)

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

2003-02-20

TPC8203

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

I GSS

V GS = ±16 V, V DS = 0 V

—

±10

µA

Drain cut−OFF current

I DSS

V DS = 30 V, V GS = 0 V

—

µA

V (BR) DSS I D = 10 mA, V GS = 0 V

—

Drain−source breakdown voltage

V (BR) DSX I D = 10 mA, V GS = −20 V

—

Gate threshold voltage

V th

V DS = 10 V, I D = 1 mA

0.8

—

2.5

R DS (ON) V GS = 4 V, I D = 3 A

—

Drain−source ON resistance

mΩ

R DS (ON) V GS = 10 V, I D = 3 A

—

Forward transfer admittance

|Y fs |

V DS = 10 V, I D = 3 A

—

Input capacitance

C iss

—

1700

—

Reverse transfer capacitance

C rss

V DS = 10 V, V GS = 0 V, f = 1 MHz

—

260

—

Output capacitan ce

C oss

—

380

—

Rise time

t r

—

Turn−ON time

t on

—

Switching time

Fall time

t f

—

Turn−OFF time

t off

—

120

—

Total gate charge (Gate−source

plus gate−drain)

Q g

—

Gate−source charge

Q gs

V DD ≈ 24 V, V GS = 10 V, I D = 6 A

—

Gate−drain (“miller”) charge

Q gd

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

I DRP

—

Forward voltage (diode)

V DSF

I DR = 6 A, V GS = 0 V

—

— −1.2

2003-02-20

TPC8203

2003-02-20

TPC8203

P D – Ta

2.0

DEVICE MOUNTED ON A GLASS-EPOXY BOARD

(a) (NOTE 2a)

(1) SINGLE-DEVICE OPERATION (NOTE 3a)

(2) SINGLE-DEVICE VALUE AT DUAL

OPERATION (NOTE 3b)

DEVICE MOUNTED ON A GLASS-EPOXY

BOARD (b) (NOTE 2b)

1.5

(1)

(3) SINGLE-DEVICE OPERATION

(NOTE 3a)

(2)

(4) SINGLE-DEVICE VALUE AT

1.0

DUAL OPERATION (NOTE 3b)

(3)

10 s

0.5

(4)

100

150

200

AMBIENT TEMPERATURE Ta ( ° C)

2003-02-20

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