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FEATURES
BV
DSS
= -250 V
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 mA (Max.) @ V
DS
= -250V
n Lower R
DS(ON)
: 3.5 W (Typ.)
R
DS(on)
= 4.0 W
I
D
= -0.45 A
2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
V
DSS
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25
-250
-0.45
-0.3
-3.6
V
o
C)
I
D
A
o
Continuous Drain Current (T
A
=70
C)
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
O
1
A
V
mJ
A
mJ
V/ns
W
W/
_
O
2
9
-0.45
0.16
-4.8
1.63
0.013
O
1
O
1
O
3
o
C)
*
P
D
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
from case for 5-seconds
*
o
C
T
J
, T
STG
- 55 to +150
o
C
T
L
300
Thermal Resistance
Symbol
Characteristic
Typ.
Max. Units
R
qJA
Junction-to-Ambient
*
--
77
o
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
BV
DSS
DBV/DT
J
V
GS(th)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
-250
--
-2.0
--
--
--
--
--
-0.21
--
--
--
--
--
--
--
-4.0
-100
100
-10
-100
V
V/
o
C
V
V
GS
=0V,I
D
=-250mA
I
D
=-250mA See Fig 7
V
DS
=-5V,I
D
=-250mA
V
GS
=-30V
V
GS
=30V
V
DS
=-250V
V
DS
=-200V,T
C
=125
o
C
I
GSS
nA
I
DSS
Drain-to-Source Leakage Current
mA
R
DS(on)
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(ÃMillerÄ ) Charge
--
--
4.0
W
V
GS
=-10V,I
D
=-0.23A
4
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
--
--
--
--
--
--
--
--
--
--
--
0.57
225
--
295
55
20
30
45
60
30
11
--
--
V
DS
=-40V,I
D
=-0.23A
4
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
35
13
10
18
24
11
9
2.0
4.6
pF
ns
V
DD
=-125V,I
D
=-1.6A,
R
G
=24W
See Fig 13
4
5
nC
V
DS
=-200V,V
GS
=-10V,
I
D
=-1.6A
See Fig 6 & Fig 12
4
5
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
O
1
4
--
--
--
--
--
--
--
--
130
0.61
-0.45
-3.6
-4.0
--
--
A
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=-0.45A,V
GS
=0V
T
J
=25
o
C,I
F
=-1.6A
di
F
/dt=100A/ms
4
V
ns
mC
O
1
2
O
3
4
5
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=70mH, I
AS
=-0.45A, V
DD
=-50V, R
G
=27W
*
, Starting T
J
=25
o
C
I
SD
-1.6A, di/dt 50A/ms, V
DD
BV
DSS
, Starting T
J
=25
o
C
Pulse Test : Pulse Width = 250ms, Duty Cycle 2%
Essentially Independent of Operating Temperature
_
_
_
_
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V
GS
Top : - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bot t om : - 4.5 V
m
m
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
m
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
,
m
+
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
!"#$"#
%&'()
*
Fig 11. Thermal Response
-
q
./
012#3
(4#5"6
0
7-
q
./
!
Fig 12. Gate Charge Test Circuit & Waveform
!"!#$%
W
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Plik z chomika:
maciejek62
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