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LM387/LM387A Low Noise Dual Preamplifier
March 1987
LM387/LM387A Low Noise Dual Preamplifier
General Description
The LM387 is a dual preamplifier for the amplification of low
level signals in applications requiring optimum noise per-
formance. Each of the two amplifiers is completely indepen-
dent, with an internal power supply decoupler-regulator, pro-
viding 110 dB supply rejection and 60 dB channel separa-
tion. Other outstanding features include high gain (104 dB),
large output voltage swing (V CC b 2V)p-p, and wide power
bandwidth (75 kHz, 20 Vp-p). The LM387A is a selected
version of the LM387 that has lower noise in a NAB tape
circuit, and can operate on a larger supply voltage. The
LM387 operates from a single supply across the wide range
of 9V to 30V, the LM387A operates on a supply of 9V to
40V.
The amplifiers are internally compensated for gains greater
than 10. The LN387, LM387A is available in an 8-lead dual-
in-line package. The LM387, LM387A is biased like the
LM381. See AN-64 and AN-104.
Features
Y Low noise
1.0 m V total input noise
Y High gain
104 dB open loop
Y Single supply operation
Y Wide supply range LM387
9 to 30V
LM387A
9 to 40V
Y Power supply rejection
110 dB
Y Large output voltage swing (V CC b 2V)p-p
Y Wide bandwidth 15 MHz unity gain
Y Power bandwidth 75 kHz, 20 Vp-p
Y Internally compensated
Y Short circuit protected
Y Performance similar to LM381
Schematic and Connection Diagrams
Dual-In-Line Package
TL/H/7845±2
Top View
Order Number LM387N or LM387AN
See NS Package Number N08E
TL/H/7845±1
Typical Applications
TL/H/7845±3
FIGURE 1. Flat Gain Circuit (A V e 1000)
TL/H/7845±4
FIGURE 2. NAB Tape Circuit
C 1995 National Semiconductor Corporation
TL/H/7845
RRD-B30M115/Printed in U. S. A.
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Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage
LM387
Power Dissipation (Note 1)
1.5W
Operating Temperature Range
0 § Cto a 70 § C
Storage Temperature Range
b 65 § Cto a 150 § C
a 30V
Lead Temperature (Soldering, 10 sec.)
260 § C
LM387A
a 40V
Electrical Characteristics T A e 25 § C, V CC e 14V, unless otherwise stated
Parameter
Conditions
Min
Typ
Max
Units
Voltage Gain
Open Loop, f e 100 Hz
160,000
V/V
Supply Current
LM387, V CC 9V±30V, R L e %
10
mA
LM387A, V CC 9V±40V, R L e %
10
mA
Input Resistance
Positive Input
50
100
k X
Negative Input
200
k X
Input Current
0.5
3.1
m A
Negative Input
Output Resistance
Open Loop
150
X
Output Current
Source
8
mA
Sink
2
mA
Output Voltage Swing
Peak-to-Peak
V CC b 2
V
Unity Gain Bandwidth
15
MHz
Large Signal Frequency
20 Vp-p (V CC l 24V),
75
kHz
Response
THD s 1%
Maximum Input Voltage
Linear Operation
300 mVrms
Supply Rejection Ratio
f e 1 kHz
110
dB
Input Referred
Channel Separation
f e 1 kHz
40
60
dB
Total Harmonic Distortion
60 dB Gain, f e 1 kHz
0.1
0.5 %
Total Equivalent Input
10 Hz±10,000 Hz
1.0
1.2
m Vrms
Noise (Flat Gain Cricuit)
LM387Figure1
Output Noise NAB Tape
Unweighted
400
700
m Vrms
Playback Circuit Gain of 37 dB LM387AFigure2
Note 1: For operation in ambient temperatures above 25 § C, the device must be derated based on a 150 § C maximum junction temperature and a thermal resistance
of 80 § C/W junction to ambient.
Typical Applications (Continued)
Two-Pole Fast Turn-ON NAB Tape Preamplifier
Frequency Response of NAB
Circuit of Figure 2
TL/H/7845±6
TL/H/7845±5
2
90960180.001.png 90960180.002.png
Typical Performance Characteristics
Large Signal Frequency
V CC vs I CC
Gain and Phase Response
Response
PSRR vs Frequency
Distortion vs Frequency
(Input Referred)
Channel Separation
Non-Inverting Amplifier
Noise Voltage vs
Noise Current vs
Distortion vs Frequency
Frequency
Frequency
Inverting Amplifier
TL/H/7845±7
3
90960180.003.png
 
Typical Applications (Continued)
Inverting Amplifier Ultra-Low Distortion
Typical Magnetic Phono Preamplifier
TL/H/7845±8
TL/H/7845±9
Physical Dimensions inches (millimeters)
Molded Dual-In-Line Package (N)
Order Number LM387N or LM387AN
NS Package Number N08E
LIFE SUPPORT POLICY
NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant
support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose
be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can
effectiveness.
be reasonably expected to result in a significant injury
to the user.
National Semiconductor
National Semiconductor
National Semiconductor
National Semiconductor
Corporation
Europe
Hong Kong Ltd.
Japan Ltd.
1111 West Bardin Road
Fax: ( a 49) 0-180-530 85 86
13th Floor, Straight Block,
Tel: 81-043-299-2309
Arlington, TX 76017
Email: cnjwge @ tevm2.nsc.com
Ocean Centre, 5 Canton Rd.
Fax: 81-043-299-2408
Tel: 1(800) 272-9959
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Fax: 1(800) 737-7018
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Tel: (852) 2737-1600
Italiano Tel: ( a 49) 0-180-534 16 80
Fax: (852) 2736-9960
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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