5M0365R.pdf

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KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN, KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch (FPS)
www.fairchildsemi.com
KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,
KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
TO-220F-4L
8-DIP
1
1.6.7.8 Drain
2. GND
3. V CC
4. FB 5. NC
1. GND 2. Drain 3. V CC 4. FB
Internal Block Diagram
#3 V CC
3 2V
5V
Vref
Internal
bias
#2 DRAIN
SF E T
(*#3 V CC )
Good
logic
(*#1.6.7.8 DRAIN)
OSC
9V
S
R
5
A
1mA
Q
#4 FB
2.5R
1R
L.E.B
(*#4 FB)
+
0.1V
7.5V
S
R
Q
#1 GND
+
Thermal S/D
(*#2 GND)
27V
Power on reset
OVER VOLTAGE S/D
*Asterisk - KA5M0365RN, KA5L0365RN
Rev.1.0.5
©2002 Fairchild Semiconductor Corporation
440573837.009.png 440573837.010.png 440573837.011.png 440573837.012.png 440573837.001.png 440573837.002.png 440573837.003.png 440573837.004.png
KA5X03XX-SERIES
Absolute Maximum Ratings
(Ta=25
C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
KA5H0365R, KA5M0365R, KA5L0365R
Maximum Drain Voltage
V D,MAX
650
V
Drain-Gate Voltage (R GS =1M
)
V DGR
650
V
Gate-Source (GND) Voltage
V GS
30
V
Drain Current Pulsed (1)
I DM
12.0
A DC
Continuous Drain Current (T C =25
C)
I D
3.0
A DC
Continuous Drain Current (T C =100
C)
I D
2.4
A DC
Single Pulsed Avalanche Energy (2)
E AS
358
mJ
Maximum Supply Voltage
VCC,MAX
30
V
Analog Input Voltage Range
VFB
-0.3 to VSD
V
Total Power Dissipation
P D
75
W
Derating
0.6
W/
C
Operating Junction Temperature.
T J
+160
C
Operating Ambient Temperature.
T A
-25 to +85
C
Storage Temperature Range.
T STG
-55 to +150
C
KA5H0380R, KA5M0380R, KA5L0380R
Maximum Drain Voltage
V D,MAX
800
V
Drain-Gate Voltage (R GS =1M
)
V DGR
800
V
Gate-Source (GND) Voltage
V GS
30
V
Drain Current Pulsed (1)
IDM
12.0
ADC
Continuous Drain Current (T C =25
C)
I D
3.0
A DC
Continuous Drain Current (T C =100
C)
I D
2.1
A DC
Single Pulsed Avalanche Energy (2)
E AS
95
mJ
Maximum Supply Voltage
V CC,MAX
30
V
Analog Input Voltage Range
VFB
-0.3 to VSD
V
Total Power Dissipation
P D
75
W
Derating
0.6
W/
C
Operating Junction Temperature.
T J
+160
C
Operating Ambient Temperature.
T A
-25 to +85
C
Storage Temperature Range.
TSTG
-55 to +150
C
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25
C
3. L = 13
H, starting Tj = 25
C
2
440573837.005.png
KA5X03XX-SERIES
Absolute Maximum Ratings
(Ta=25
C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
KA5M0365RN, KA5L0365RN
Maximum Drain Voltage
V D,MAX
650
V
Drain-Gate Voltage (R GS =1M
)
V DGR
650
V
Gate-Source (GND) Voltage
V GS
30
V
Drain Current Pulsed (1)
I DM
12.0
A DC
Continuous Drain Current (Ta=25
C)
I D
0.42
A DC
Continuous Drain Current (Ta=100
C)
I D
0.28
A DC
Single Pulsed Avalanche Energy (2)
E AS
127
mJ
Maximum Supply Voltage
VCC,MAX
30
V
Analog Input Voltage Range
VFB
-0.3 to VSD
V
Total Power Dissipation
P D
1.56
W
Derating
0.0125
W/
C
Operating Junction Temperature.
T J
+160
C
Operating Ambient Temperature.
T A
-25 to +85
C
Storage Temperature Range.
T STG
-55 to +150
C
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25
C
3. L = 13
H, starting Tj = 25
C
3
440573837.006.png
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25
C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage
BV DSS
V GS =0V, I D =50
A
650
-
-
V
V DS =Max. Rating, V GS =0V
-
-
50
A
Zero Gate Voltage Drain Current
IDSS
V DS =0.8Max. Rating,
V GS =0V, T C =125
-
-
200
A
C
Static Drain-Source on Resistance (Note)
R DS(ON) V GS =10V, I D =0.5A
-
3.6
4.5
Forward Transconductance (Note)
gfs
V DS =50V, I D =0.5A
2.0
-
-
S
Input Capacitance
Ciss
-
720
-
V GS =0V, V DS =25V,
f=1MHz
Output Capacitance
Coss
-
40
-
pF
Reverse Transfer Capacitance
Crss
-
40
-
Turn On Delay Time
td(on)
V DD =0.5BV DSS , I D =1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-
150
-
Rise Time
tr
-
100
-
nS
Turn Off Delay Time
td(off)
-
150
-
Fall Time
tf
-
42
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V GS =10V, I D =1.0A,
V DS =0.5BV DSS (MOSFET
switching time is essentially
independent of
operating temperature)
-
-
34
Gate-Source Charge
Qgs
-
7.3
-
nC
Gate-Drain (Miller) Charge
Qgd
-
13.3
-
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage
BV DSS
V GS =0V, I D =50
A
800
-
-
V
V DS =Max. Rating, V GS =0V
-
-
250
A
Zero Gate Voltage Drain Current
I DSS
V DS =0.8Max. Rating,
VGS=0V, TC=125
-
-
1000
A
C
Static Drain-Source on Resistance (Note)
R DS(ON) V GS =10V, I D =0.5A
-
4.0
5.0
Forward Transconductance (Note)
gfs
V DS =50V, I D =0.5A
1.5
2.5
-
S
Input Capacitance
Ciss
-
779
-
V GS =0V, V DS =25V,
f=1MHz
Output Capacitance
Coss
-
75.6
-
pF
Reverse Transfer Capacitance
Crss
-
24.9
-
Turn On Delay Time
td(on)
V DD =0.5BV DSS , I D =1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-
40
-
Rise Time
tr
-
95
-
nS
Turn Off Delay Time
td(off)
-
150
-
Fall Time
tf
-
60
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS=10V, ID=1.0A,
V DS =0.5BV DSS (MOSFET
switching time is
essentially independent of
operating temperature)
-
-
34
nC
Gate-Source Charge
Qgs
-
7.2
-
Gate-Drain (Miller) Charge
Qgd
-
12.1
-
Note:
1. Pulse test: Pulse width
300
S, duty
2%
2.
S
=
1
----
4
440573837.007.png
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25
C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
KA5M0365RN, KA5L0365RN
Drain-Source Breakdown Voltage
BV DSS
V GS =0V, I D =50
A
650
-
-
V
V DS =Max. Rating, V GS =0V
-
-
50
A
Zero Gate Voltage Drain Current
IDSS
V DS =0.8Max. Rating,
V GS =0V, T C =125
-
-
200
A
C
Static Drain-Source on Resistance (Note)
R DS(ON) V GS =10V, I D =0.5A
-
3.6
4.5
Forward Transconductance (Note)
gfs
V DS =50V, I D =0.5A
2.0
-
-
S
Input Capacitance
Ciss
-
314.9
-
V GS =0V, V DS =25V,
f=1MHz
Output Capacitance
Coss
-
47
-
pF
Reverse Transfer Capacitance
Crss
-
9
-
Turn On Delay Time
td(on)
V DD =0.5BV DSS , I D =1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-
11.2
-
Rise Time
tr
-
34
-
nS
Turn Off Delay Time
td(off)
-
28.2
-
Fall Time
tf
-
32
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V GS =10V, I D =1.0A,
V DS =0.5BV DSS (MOSFET
switching time is
essentially independent of
operating temperature)
11.93
Gate-Source Charge
Qgs
-
1.95
-
nC
Gate-Drain (Miller) Charge
Qgd
6.85
Note:
1. Pulse test: Pulse width
300
S, duty
2%
2.
S
=
1
----
5
440573837.008.png

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