BD135 I 139.pdf

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NPN SILICON TRANSISTORS
[
BD135
BD139
NPN SILICON TRANSISTORS
Type
Marking
BD135
BD135
BD135-10
BD135-10
BD135-16
BD135-16
BD139
BD139
BD139-10
BD139-10
BD139-16
BD139-16
n
STMicroelectronics PREFERRED
SALESTYPES
3
2 1
DESCRIPTION
The BD135 and BD139 are silicon Epitaxial
Planar NPN transistors mounted in Jedec
SOT-32 plastic package, designed for audio
amplifiers and drivers utilizing complementary or
quasi-complementary circuits.
The complementary PNP types are BD136 and
BD140 respectively.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BD135
BD139
V CBO
Collector-Base Voltage (I E =0)
45
80
V
V CEO
Collector-Emitter Voltage (I B =0)
45
80
V
V EBO
Emitter-Base Voltage (I C =0)
5
V
I C
Collector Current
1.5
A
I CM
Collector Peak Current
3
A
I B
Base Current
0.5
A
P tot
Total Dissipation at T c
3
25
o C
12.5
W
P tot
Total Dissipation at T amb
3
25 o C
1.25
W
T stg
Storage Temperature
-65 to 150
o C
T j
Max. Operating Junction Temperature
150
o C
September 2001
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BD135 / BD139
THERMAL DATA
R thj-case Thermal Resistance Junction-case
Max
10
o C/W
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
I CBO
Collector Cut-off
Current (I E =0)
V CB =30V
V CB =30V T C =125 o C
0.1
10
m
A
m
A
I EBO
Emitter Cut-off Current
(I C =0)
V EB =5V
10
m A
V CEO(sus )
*
Collector-Emitter
Sustaining Voltage
(I B =0)
I C =30mA
for BD135
for BD139
45
80
V
V
V CE(sat)
*
Collector-Emitter
Saturation Voltage
I C =0.5A
I B =0.05A
0.5
V
V BE
*
Base-Emitter Voltage
I C =0.5A
V CE =2V
1
V
h FE *
DC Current Gain
I C =5mA
V CE =2V
25
40
25
I C =150mA
V CE =2V
250
I C =0.5A
V CE =2V
h FE
h FE Groups
I C =150mA V CE =2V
for BD135/BD139 group-10
for BD135/BD139 group-16
63
100
160
250
* Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
Safe Operating Area
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BD135 / BD139
SOT-32 (TO-126) MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.425
b
0.7
0.9
0.028
0.035
b1
0.40
0.65
0.015
0.025
C
2.4
2.7
0.094
0.106
c1
1.0
1.3
0.039
0.051
D
15.4
16.0
0.606
0.630
e
2.2
0.087
e3
4.4
0.173
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
I
1.27
0.05
O
0.3
0.011
V
10 o
10 o
1: Base
2: Collector
3: Emitter
0016114/B
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BD135 / BD139
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
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