2n6188 i 2n6190.pdf

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COMPLEMENTARY SILICON POWER TRANSISTORS
®
2N6487
2N6488/2N6490
COMPLEMENTARY SILICON POWER TRANSISTORS
n
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
n
DESCRIPTION
The 2N6487 and 2N6488 are silicon
epitaxial-base NPN transistors in Jedec TO-220
plastic package.
They are inteded for use in power linear and low
frequency switching applications.
The 2N6487 complementary type is 2N6490.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
2N6487
2N6488
PNP
2N6490
V CBO
Collector-Base Voltage (I E = 0)
70
90
V
V CEX
Collector-Emitter Voltage (V BE =-1.5V,R BE =100
W
)
70
90
V
V CEO
Collector-Emitter Voltage (I B = 0)
60
80
V
V EBO
Emitter-Base Voltage (I C = 0)
5
V
I C
Collector Current
15
A
I B
Base Current
5
A
P tot
Total Dissipation at T c
£
25 o C
75
W
T stg
Storage Temperature
-65 to 150
o C
T j
Max. Operating Junction Temperature
150
o C
For PNP types voltage and current values are negative.
April 1999
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2N6487 / 2N6488 / 2N6490
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.67
70
o C/W
o
ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
I CEX
Collector Cut-off
Current (V BE = -1.5V)
for 2N6487/2N6490 V CE = 65 V
for 2N6488 V CE = 85 V
T c = 150 o C
for 2N6487/2N6490 V CE = 60 V
for 2N6488 V CE = 80 V
0.5
0.5
mA
mA
5
5
mA
mA
I CER
Collector Cut-off
Current (R BE = 100
for 2N6487/2N6490 V CE = 55 V
for 2N6488 V CE = 75 V
0.5
0.5
mA
mA
W
)
I CEO
Collector Cut-off
Current (I B = 0)
for 2N6487/2N6490 V CE = 30 V
for 2N6488 V CE = 40 V
1
1
mA
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
1
mA
V CEO(sus) *
Collector-Emitter
Sustaining Voltage
I C = 200 mA
for 2N6487/2N6490
for 2N6488
60
80
V
V
V CER(sus) *
Collector-Emitter
Sustaining Voltage
(R BE = 100
I C = 200 mA
for 2N6487/2N6490
for 2N6488
W
)
65
85
V
V
V CEX(sus) *
Collector-Emitter
Sustaining Voltage
(V BE =-1.5V, R BE =100
I C = 200 mA
for 2N6487/2N6490
for 2N6488
W
)
70
90
V
V
V CE(sat)
*
Collector-Emitter
Saturation Voltage
I C = 5 A I B = 0.5 A
I C = 15 A I B = 5 A
1.3
3.5
V
V
V BE
*
Base-Emitter Voltage
I C = 5 A V CE = 4 V
I C = 15 A V CE = 4 V
1.3
3.5
V
V
h FE
*
DC Current Gain
I C = 5 A V CE = 4 V
I C = 15 A V CE = 4 V
20
5
150
h fe
Small Signal Current
Gain
I C = 1 A V CE = 4 V f = 1MHz
I C = 1 A V CE = 4 V f = 1KHz
5
25
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Pulsed: Pulse duration = 300
m
2/4
C/W
*
23105153.041.png 23105153.042.png 23105153.043.png
2N6487 / 2N6488 / 2N6490
TO-220 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
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2N6487 / 2N6488 / 2N6490
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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