BUK456-100A-B_2.pdf

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK456-100A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL PARAMETER
MAX.
MAX.
UNIT
field-effect power transistor in a
plastic envelope.
BUK456
-100A
-100B
The device is intended for use in
V DS
Drain-source voltage
100
100
V
Switched Mode Power Supplies
I D
Drain current (DC)
34
32
A
(SMPS), motor control, welding,
P tot
Total power dissipation
150
150
W
DC/DC and AC/DC converters, and
T j
Junction temperature
175
175
˚C
in general purpose switching
R DS(ON)
Drain-source on-state
0.057
0.065
W
applications.
resistance
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
d
1
gate
2
drain
3
source
g
tab drain
123
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V DS
Drain-source voltage
-
-
100
V
V DGR
Drain-gate voltage
R GS = 20 k
W
-
100
V
±
V GS
Gate-source voltage
-
-
30
V
-100A
-100B
I D
Drain current (DC)
T mb = 25 ˚C
-
34
32
A
I D
Drain current (DC)
T mb = 100 ˚C
-
24
22
A
I DM
Drain current (pulse peak value) T mb = 25 ˚C
-
136
128
A
P tot
Total power dissipation
T mb = 25 ˚C
-
150
W
T stg
Storage temperature
-
- 55
175
˚C
T j
Junction temperature
-
-
175
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance junction to
-
-
1.0
K/W
mounting base
R th j-a
Thermal resistance junction to
-
60
-
K/W
ambient
April 1998
1
Rev 1.100
22889705.008.png 22889705.009.png 22889705.010.png 22889705.011.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK456-100A/B
STATIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V (BR)DSS
Drain-source breakdown
V GS = 0 V; I D = 0.25 mA
100
-
-
V
voltage
V GS(TO)
Gate threshold voltage
V DS = V GS ; I D = 1 mA
2.1
3.0
4.0
V
I DSS
Zero gate voltage drain current V DS = 100 V; V GS = 0 V; T j = 25 ˚C
-
1
10
A
m
I DSS
Zero gate voltage drain current V DS = 100 V; V GS = 0 V; T j =125 ˚C
-
0.1
1.0
mA
I GSS
Gate source leakage current
V GS =
±
30 V; V DS = 0 V
-
10
100
nA
R DS(ON)
Drain-source on-state
V GS = 10 V;
BUK456-100A
-
0.052 0.057
W
resistance
I D = 15 A
BUK456-100B
-
0.06 0.065
W
DYNAMIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
g fs
Forward transconductance
V DS = 25 V; I D = 15 A
12
16
-
S
C iss
Input capacitance
V GS = 0 V; V DS = 25 V; f = 1 MHz
-
1500 2000
pF
C oss
Output capacitance
-
450
600
pF
C rss
Feedback capacitance
-
130
200
pF
t d on
Turn-on delay time
V DD = 30 V; I D = 3 A;
-
20
30
ns
t r
Turn-on rise time
V GS = 10 V;
-
40
60
ns
t d off
Turn-off delay time
R gen = 50
W
;
-
150
200
ns
t f
Turn-off fall time
R GS = 50
W
-
65
85
ns
L d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I DR
Continuous reverse drain
-
-
-
34
A
current
I DRM
Pulsed reverse drain current
-
-
-
136
A
V SD
Diode forward voltage
I F = 34 A ; V GS = 0 V
-
1.8
2.5
V
t rr
Reverse recovery time
I F = 34 A; -dI F /dt = 100 A/
m
s;
-
100
-
ns
Q rr
Reverse recovery charge
V GS = 0 V; V R = 30 V
-
1.0
-
m
C
April 1998
2
Rev 1.100
22889705.001.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK456-100A/B
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
10
Zth j-mb / (K/W)
BUKx56-lv
1
D =
0.1
0.5
0.2
0.1
0.05
0.02
0.01
P
D
t p
D =
T
0
T
t
0.001
0
20 40 60 80 100 120 140 160 180
Tmb / C
1E-05
1E-03
1E-01
1E+01
t / s
Fig.1. Normalised power dissipation.
PD% = 100
×
P D /P D 25 ˚C = f(T mb )
Fig.4. Transient thermal impedance.
Z th j-mb = f(t); parameter D = t p /T
120
110
100
90
80
70
60
50
40
30
20
10
0
ID%
Normalised Current Derating
70
ID / A
BUK456-100A
VGS / V =
20
10
8
60
15
7
50
40
6
30
20
5
10
4
0
0
20 40 60 80 100 120 140 160 180
Tmb / C
0
2
4
6
8
10
VDS / V
Fig.2. Normalised continuous drain current.
ID% = 100
I D /I D 25 ˚C = f(T mb ); conditions: V GS
³
10 V
Fig.5. Typical output characteristics, T j = 25 ˚C.
I D = f(V DS ); parameter V GS
1000
ID / A
BUK456-100A,B
0.2
RDS(ON) / Ohm
BUK456-100A
4.5 5
5.5
6
6.5
VGS / V =
7
7.5
A
B
100
tp = 10 us
8
10
100 us
0.1
10
1 ms
20
DC
10 ms
100 ms
1
1
10
100
1000
0
0
20
40
60
80
VDS / V
ID / A
Fig.3. Safe operating area. T mb = 25 ˚C
I D & I DM = f(V DS ); I DM single pulse; parameter t p
Fig.6. Typical on-state resistance, T j = 25 ˚C.
R DS(ON) = f(I D ); parameter V GS
April 1998
3
Rev 1.100
t p
×
22889705.002.png 22889705.003.png 22889705.004.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK456-100A/B
ID / A
BUK456-100A
VGS(TO) / V
70
max.
Tj / C =
25
4
60
150
typ.
50
3
40
min.
30
2
20
1
10
0
0
0
2
4
6
8
10
-60
-20
20
60
100
140
180
VGS / V
Tj / C
Fig.7. Typical transfer characteristics.
I D = f(V GS ) ; conditions: V DS = 25 V; parameter T j
Fig.10. Gate threshold voltage.
V GS(TO) = f(T j ); conditions: I D = 1 mA; V DS = V GS
gfs / S
BUK456-100A
1E-01
ID / A
SUB-THRESHOLD CONDUCTION
20
1E-02
1E-03
2 %
typ
98 %
10
1E-04
1E-05
0
1E-06
0
20
40
60
0
1
2
3
4
ID / A
VGS / V
Fig.8. Typical transconductance, T j = 25 ˚C.
g fs = f(I D ); conditions: V DS = 25 V
Fig.11. Sub-threshold drain current.
I D = f(V GS) ; conditions: T j = 25 ˚C; V DS = V GS
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
Normalised RDS(ON) = f(Tj)
10000
C / pF
BUK4y6-100
1000
Ciss
Coss
100
Crss
10
-60
-20
20
60
100
140
180
0
20
40
Tj / C
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = R DS(ON) /R DS(ON)25 ˚C = f(T j ); I D = 15 A; V GS = 10 V
Fig.12. Typical capacitances, C iss , C oss , C rss .
C = f(V DS ); conditions: V GS = 0 V; f = 1 MHz
April 1998
4
Rev 1.100
22889705.005.png 22889705.006.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK456-100A/B
12
VGS / V
BUK456-100
70
IF / A
BUK456-100A
10
VDS / V =20
60
50
8
80
40
6
Tj / C = 150
25
30
4
20
2
10
0
0
20
40
0
0
1
2
QG / nC
VSDS / V
Fig.13. Typical turn-on gate-charge characteristics.
V GS = f(Q G ); conditions: I D = 34 A; parameter V DS
Fig.14. Typical reverse diode current.
I F = f(V SDS ); conditions: V GS = 0 V; parameter T j
April 1998
5
Rev 1.100
22889705.007.png

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