EMIF10-LCD02F3.pdf

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10 line EMI filter and ESD protection for LCD and cameras
10 line EMI filter and ESD protection for
LCD and cameras
efrcom
EMIF10-LCD02F3
key ic
EMIF10-LCD02F3
2610
Main product characteristics:
Where EMI filtering in ESD sensitive equipment is
required :
■
LCD for Mobile phones
■
Computers and printers
■
Communication systems
■
MCU Boards
Flip-Chip
(24 bumps)
Description
Pin Configuration (bump side)
The EMIF10-LCD02F3 is a 10 lines highly
integrated devices designed to suppress EMI/RFI
noise in all systems subjected to electromagnetic
interferences. The EMIF10 flip chip packaging
means the package size is equal to the die size.
efrcom efrco m
ic
board
5
4
3
2
1
1 2
3
4
5
O1
O2
GND
I1
I2
A
A
I2
I1
GND
O2
O1
O3
O4
I3
I4
B
B
I4
I3
O4
O3
This filter includes ESD protection circuitry, which
prevents damage to the application when
subjected to ESD surges up 15kV.
O5
O6
GND
I5
I6
C
C
I6
I5
GND
O6
O5
O7
O8
GND
I7
I8
D
D
I8
I7
GND
O8
O7
Benefits
O9
O10
GND
I9
I10
E
E
I10
I9
GND
O10
O9
■
Lead free package
Basic Cell Configuration
■
EMI symmetrical (I/O) low-pass filter
■
High efficiency in EMI filtering
Low-pass Filter
■
400 µm pitch
Input
Output
■
Compatible with high speed data rate
■
Very low PCB space consuming: < 4mm 2
■
Very thin package: 0.60 mm
Ri/o = 70
Cline = 30pF
Ω
High efficiency in ESD suppression
GND
GND
GND
■
■
High reliability offered by monolithic integration
■
High reducing of parasitic elements through
integration and wafer level packaging
Complies with the following standards:
IEC61000-4-2:
Order Code
Level 4
15 kV (air discharge)
8 kV ( contact discharge)
Part Number
Marking
EMIF10-LCD02F3
GY
on inputs and outputs
MIL STD 833E - Method 3015-6 Class 3
Rev 1
July 2005
www.st.com
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356213277.007.png 356213277.008.png 356213277.009.png 356213277.010.png
1 Electrical characteristics (T amb = 25°C)
EMIF10-LCD02F3
Table 1.
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
T j
Junction temperature
125
°C
T op
Operating temperature range
-40 to + 85
°C
T stg
Storage temperature range
-55 to +150
°C
1
Electrical characteristics (T amb = 25°C)
Symbol
Parameter
I
V BR
Breakdown voltage
I F
I RM
Leakage current @ V RM
V RM
Stand-off voltage
V F
V CL
V BR
V RM
V
V CL
Clamping voltage
I RM
I R
I PP
Peak pulse current
R I/O
Series resistance between Input & Output
I PP
C line
Input capacitance per line
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V BR
I R = 1 mA
6
8
10
V
I RM
V RM = 3V
50
200
nA
R I/O
Tolerance ± 20%
70
Ω
C line
Vline = 0V, V OSE = 30 mV, F =1 MHz
30
pF
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EMIF10-LCD02F3
1 Electrical characteristics (T amb = 25°C)
Figure 1. S21(dB) all lines attenuation
measurement and Aplac simulation
Figure 2. Analog cross talk measurements
0.00
dB
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
-90.00
-100.00
100.0k
1.0M
10.0M
100.0M
1.0G
f/Hz
Xtalk 1/2
Figure 3. ESD response to IEC61000-4-2
(+15kV air discharge) on one input
and on one output
Figure 4. ESD response to IEC61000-4-2
(-15kV air discharge) on one input
and on one output
Input
10V/d
Input
10V/d
Output
10V/d
Output
10V/d
100ns/d
100ns/d
Figure 5. Line capacitance versus applied
voltage
C (pF)
line
30
25
20
15
10
5
V (V)
line
0
0
1
2
3
4
5
6
3/8
0.00
dB
0.00
dB
-10.00
-10.00
-20.00
-20.00
-30.00
-30.00
-40.00
-40.00
-50.00
-50.00
-60.00
-60.00
-70.00
-70.00
-80.00
-80.00
-90.00
-90.00
-100.00
-100.00
100.0k
100.0k
1.0M
1.0M
10.0M
10.0M
100.0M
100.0M
1.0G
1.0G
f/Hz
f/Hz
Xtalk 1/2
Xtalk 1/2
356213277.003.png 356213277.004.png
2 Aplac model
EMIF10-LCD02F3
2
Aplac model
Figure 6. Device structure (one cell)
Lbump Rbump
Rline
Rbump
Lbump
O1
I1
MODEL = D1
MODEL = D2
bulk
bulk
MODEL = D3
Rbump
Rbump
Rbump
Rbump
Cbump
Cbump
Cbump
Cbump
Lbump
Lbump
Lbump
Lbump
Rgnd
Rgnd
Rgnd
Rgnd
Lgnd
Lgnd
Lgnd
Lgnd
Figure 7. Aplac model variables
aplacvar Rline 70
aplacvar C_d1 15p
aplacvar C_d2 15p
aplacvar C_d3 600p
aplacvar Ls 950pH
aplacvar Rs 150m
aplacvar Lbump 50pH
aplacvar Rbump 20m
aplacvar Cbump 150f
aplacvar Lgnd 50pH
aplacvar Rgnd 100m
aplacvar Rsub 10m
Diode D1
BV=7
IBV=1m
CJO=C_d1
M=0.28
RS=0.1
VJ=0.6
TT=100n
Diode D2
BV=7
IBV=1m
CJO=C_d2
M=0.28
RS=0.1
VJ=0.6
TT=100n
Diode D3
BV=7
IBV=1m
CJO=C_d3
M=0.28
RS=0.01
VJ=0.6
TT=100n
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EMIF10-LCD02F3
3 Ordering information scheme
3
Ordering information scheme
EMIF yy - xxx zz F3
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
F = Flip-Chip
3 = Lead free Pitch = 400µm, Bump = 255µm
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