EMIF02-USM01.pdf

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®
EMIF02-USB01
IPAD TM
2 LINES EMI FILTER
INCLUDING ESD PROTECTION
MAIN APPLICATION
n ESD protection and EMI filtering for USB port.
DESCRIPTION
The EMIF02-USB01 is a highly integrated array
designed to suppress EMI / RFI noise for USB port
filtering.
The EMIF02-USB01 flip-chip packaging means
the package size is equal to the die size. That's
why EMIF02-USB01 is a very small device.
Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
15 kV.
Flip Chip package
PIN CONFIGURATION
BENEFITS
321
n 2 lines low-pass-filter + 2 lines ESD protection
n High efficiency in EMI filtering
n Very low PCB space consuming: 2.5 mm 2
n Very thin package: 0.65 mm
n High efficiency in ESD suppression
(IEC61000-4-2 level 4)
n High reliability offered by monolithic integration
A
B
C
n
High reducing of parasitic elements through
integration & wafer level packaging.
D
COMPLIES WITH THE FOLLOWING STANDARDS :
IEC61000-4-2 level 4
15kV (air discharge)
8 kV (contact discharge)
on input & output pins.
E
TM : ASD is trademark of STMicroelectronics.
January 2003 - Ed: 5
1/6
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EMIF02-USB01
SCHEMATIC
A3
A1
1.3K
33R
B2
C1
C3
D2
(gnd pin)
33R
E1
E3
Fig. 1: Filtering behavior
Fig. 2: ESD response to IEC61000-4-2 Level 4
EMIF02-USB01: filtering response of lines C1/C3 and E1/E3
0.00
dB
-5.00
-10.00
-15.00
-20.00
Vin
-25.00
-30.00
-35.00
Vout
-40.00
-45.00
-50.00
1.0M
3.0M
10.0M
30.0M
100.0M
300.0M
1.0G
3.0G
E1_E3
Frequency/Hz
C1_C3
Fig. 3: Capacitance versus reverse applied
voltage
Fig. 4: Digital crosstalk
40
0.00
dB
-10.00
35
-20.00
30
-30.00
-40.00
25
-50.00
20
-60.00
-70.00
15
-80.00
-90.00
10
-100.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VR (V)
1.0M
3.0M
10.0M
30.0M
100.0M
300.0M
1.0G
3.0G
f/Hz
2/6
0.00
356213100.013.png 356213100.014.png 356213100.001.png 356213100.002.png 356213100.003.png
EMIF02-USB01
ABSOLUTE MAXIMUM RATINGS (T amb =25°C)
Symbol
Parameter and test conditions
Value
Unit
V PP
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
15
8
kV
T j
Junction temperature
125
°C
T op
Operating temperature range
-40 to + 85
°C
T stg
Storage temperature range
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (T amb =25°C)
Symbol
Parameter
V BR
Breakdown voltage
I RM
Leakage current @ V RM
V RM
Stand-off voltage
V CL
Clamping voltage
Rd
Dynamic impedance
I PP
Peak pulse current
slope: 1/Rd
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V BR
I R =1mA
6
V
I RM
V RM =3V
0.1
0.5
m
A
C line
@0V
40
45
pF
R 1, R 2
Tolerance ± 5%
33.0
W
R 3
Tolerance ± 5%
1.30
k
W
3/6
356213100.004.png 356213100.005.png 356213100.006.png
EMIF02-USB01
APLAC MODELS
Fig. 5: Aplac model of resistors
3.8nH
R_1k3
C1
A3
Csub
Csub
rsub_1k3
rsub_1k3
bulk
0.15nH
R_33R
0.23nH
C3
cap_33R
Csub
Csub
cap_33R
rsub_33R
rsub_33R
bulk
0 .3nH
R_33R
0.7nH
E1
E3
cap_33R
Csub
Csub
cap_33R
rsub_33R
rsub_33R
bulk
Fig. 6: Aplac model of the diodes
Fig. 7: Aplac model of bumps & ground
connections
A1, A3, B2, C1, C3, E1, E3
D2
Cbump Rsubump
0.15nH
I/O
bulk
D02_usb
Lbump
100m
D2
bulk
Rbump
D02_usb
D02_Nw
Lhole
caphole
Lgnd_D
Rsub_D
Rhole
D2
bulk
4/6
Csub
Csub
356213100.007.png 356213100.008.png 356213100.009.png
EMIF02-USB01
Fig. 8: Aplac model parameters
Fig. 9: Comparison between Aplac simulations
and measured frequency response.
aplacvar R_33R 33.9
aplacvar cap_33R 1.2pF
Model D02_Nw
BV=100
IBV=1m
CJO=6.8p
M=0.3333
RS=2
VJ=0.6
TT=100n
Model D02_usb
BV=16
IBV=1m
CJO=Cz
M=0.3333
RS=2
VJ=0.6
TT=100n
0.00
dB
aplacvar R_1k3 1.3k
-5.00
aplacvar Cz 29pF
aplacvar Rsub_D 100
-10.00
-15.00
aplacvar Csub 0.3pF
aplacvar Rsub_33R 15
aplacvar Rsub_1k3 50
-20.00
-25.00
simulation
-30.00
aplacvar lhole 10pH
aplacvar Rhole 400m
aplacvar Caphole0.4pF
aplacvar Lgnd_D 150pH
-35.00
-40.00
-45.00
measure
aplacvar Lbump 50pH
aplacvar Rbump 50m
aplacvar Cbump 1.5pF
aplacvar Rsubump 150
-50.00
1.0M
3.0M
10.0M
30.0M
100.0M
300.0M
1.0G
3.0G
Aplac: C1/C3
f/Hz
Meas: C1_C3_symm
ORDER CODE
EMIF 02 - USB 01
Electro Magnetic
Interference Filter
Version
Nb of lines
USB port fonction
PACKAGE MECHANICAL DATA
700 ± 50
315 ± 50
650µm ± 65
1.27mm ± 50µm
5/6
aplacvar R_33R 33.9
aplacvar cap_33R 1.2pF
aplacvar R_1k3 1.3k
aplacvar Cz 29pF
aplacvar Rsub_D 100
aplacvar Csub 0.3pF
aplacvar Rsub_33R 15
aplacvar Rsub_1k3 50
aplacvar lhole 10pH
aplacvar Rhole 400m
aplacvar Caphole0.4pF
aplacvar Lgnd
aplacvar Lbump 50pH
aplacvar Rbump 50m
aplacvar Cbump 1.5pF
aplacvar Rsubump 150
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