PBYR745B.PDF

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR745B series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Low leakage, platinum barrier,
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
schottky rectifier diodes in a plastic
envelope suitable for surface
PBYR7-
35B
40B
45B
mounting, featuring low forward
V RRM
Repetitive peak reverse
35
40
45
V
voltage drop, absence of stored
voltage
charge. and guaranteed reverse
V F
Forward voltage
0.57
0.57
0.57
V
surge capability. The devices are
I F(AV)
Average forward current
7.5
7.5
7.5
A
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and zero switching losses
are important.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
mb
1
no connection
k
a
2
cathode
tab
3
3
anode
2
mb cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-35
-40
-45
V RRM
Repetitive peak reverse voltage
-
35
40
45
V
V RWM
Crest working reverse voltage
-
35
40
45
V
V R
Continuous reverse voltage
T mb
£
139 ˚C
-
35
40
45
V
I F(AV)
Average forward current
square wave;
d
= 0.5;
-
7.5
A
T mb
£
136 ˚C
I F(RMS)
RMS forward current
-
11
A
I FRM
Repetitive peak forward current t = 25
m
s;
d
= 0.5;
-
15
A
T mb
£
136 ˚C
I FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T j = 125 ˚C prior
to surge; with reapplied
V RRM(max)
I 2 t
I 2 t for fusing
t = 10 ms
-
91
A 2 s
I RRM
Repetitive peak reverse current t p = 2
m
s;
d
= 0.001
-
1
A
I RSM
Non-repetitive peak reverse
t p = 100
m
s
-
1
A
current
T stg
Storage temperature
-65
175
˚C
T j
Operating junction temperature
-
150
˚C
August 1996
1
Rev 1.000
schottky barrier
337904775.008.png
Philips Semiconductors
Product specification
Rectifier diodes
PBYR745B series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance junction to
-
-
3.0
K/W
mounting base
R th j-a
Thermal resistance junction to minimum footprint, FR4 board
-
50
-
K/W
ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V F
Forward voltage
I F = 7.5 A; T j = 125˚C
-
0.50 0.57
V
I F = 15 A; T j = 125˚C
-
0.62 0.72
V
I F = 15 A
-
0.74 0.84
V
I R
Reverse current
V R = V RRM
-
50
100
m
A
V R = V RRM ; T j = 125 ˚C
-
12
22
mA
C d
Junction capacitance
f = 1MHz; V R = 5V; T j = 25 ˚C to
-
350
-
pF
125 ˚C
August 1996
2
Rev 1.000
schottky barrier
337904775.009.png
Philips Semiconductors
Product specification
Rectifier diodes
PBYR745B series
PF / W
PBYR745
Tmb(max) / C
126
IR / mA
PBYR745
8
100
Vo = 0.419
Rs = 0.015
7
129
D = 1.0
6
132
10
150 C
5
0.5
135
125 C
4
0.2
138
1
3
0.1
141
100 C
I
t p
D =
t p
0.1
2
T
144
75 C
1
t
147
Tj = 50 C
T
0.01
0
0
2
4
6
8
10
12
150
0
25
50
IF(AV) / A
VR/ V
Fig.1. Maximum forward dissipation P F = f(I F(AV) );
square current waveform where I F(AV) =I F(RMS) x
Ö
D.
Fig.4. Typical reverse leakage current; I R = f(V R );
parameter T j
PF / W
PBYR745
Tmb(max) / C
Cd / pF
PBYR745
5
135
1000
Vo = 0.419
Rs = 0.015
a = 1.57
1.9
4
138
2.2
2.8
3
4
141
100
2
144
1
147
0
150
10
1
10
100
0
1
2
3
4
5
6
7
8
IF(AV) / A
VR / V
Fig.2. Maximum forward dissipation P F = f(I F(AV) );
sinusoidal current waveform where a = form
factor = I F(RMS) / I F(AV) .
Fig.5. Typical junction capacitance; C d = f(V R );
f = 1 MHz; T j = 25˚C to 125 ˚C.
IF / A
PBYR745
Zth j-mb (K/W)
50
10
typ
max
Tj = 25 C
Tj = 125 C
40
1
30
20
0.1
P
t p
D
10
t
0
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10us
1ms
0.1s
10s
VF / V
tp / s
Fig.3. Typical and maximum forward characteristic
I F = f(V F ); parameter T j
Fig.6. Transient thermal impedance; Z th j-mb = f(t p ).
August 1996
3
Rev 1.000
schottky barrier
337904775.010.png 337904775.011.png
Philips Semiconductors
Product specification
Rectifier diodes
PBYR745B series
MECHANICAL DATA
Dimensions in mm
10.3 max
4.5 max
1.4 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.7. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.8. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
August 1996
4
Rev 1.000
schottky barrier
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR745B series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Ó
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
5
Rev 1.000
schottky barrier
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
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