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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYW54 to BYW56
Controlled avalanche rectifiers
Product specication
Supersedes data of 1996 Jun 11
File under Discrete Semiconductors, SC01
1996 Oct 03
337904749.003.png
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYW54 to BYW56
FEATURES
DESCRIPTION
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
·
Glass passivated
Rugged glass package, using a high
temperature alloyed construction.
·
High maximum operating
temperature
·
Low leakage current
2/3 pa ge (Datas heet)
k
a
·
Excellent stability
·
Guaranteed avalanche energy
absorption capability
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
·
Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V RRM
repetitive peak reverse voltage
BYW54
-
600
V
BYW55
-
800
V
BYW56
-
1000
V
V RWM
crest working reverse voltage
BYW54
-
600
V
BYW55
-
800
V
BYW56
-
1000
V
V R
continuous reverse voltage
BYW54
-
600
V
BYW55
-
800
V
BYW56
-
1000
V
I F(AV)
average forward current
C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
°
-
2.0 A
T amb =80 ° C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
-
0.8 A
I FSM
non-repetitive peak forward current
t = 10 ms half sinewave
-
50
A
E RSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; T j =T j max prior to
surge; inductive load switched off
-
20
mJ
T stg
storage temperature
- 65
+175
° C
T j
junction temperature
see Fig.5
- 65
+175
° C
1996 Oct 03
2
T tp =45
337904749.004.png
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYW54 to BYW56
ELECTRICAL CHARACTERISTICS
T j =25 ° C; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V F
forward voltage
I F = 1 A; T j =T j max ; see Fig.6
-
-
0.8 V
I F = 1 A; see Fig.6
-
-
1.0 V
V (BR)R
reverse avalanche
breakdown voltage
I R = 0.1 mA
BYW54
650
-
-
V
BYW55
900
-
-
V
BYW56
1100
-
-
V
I R
reverse current
V R =V RRMmax ; see Fig.7
-
-
1
m A
V R =V RRMmax ; T j = 165
°
C;
-
-
150
m A
see Fig.7
t rr
reverse recovery time
when switched from I F = 0.5 A to
I R = 1 A; measured at I R = 0.25 A;
see Fig.10
-
3
-
m
s
C d
diode capacitance
V R = 0 V; f = 1 MHz; see Fig.8
-
50
-
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
R th j-a
thermal resistance from junction to ambient
note 1
100
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
³
40
m
m, see Fig.9.
For more information please refer to the “General Part of Handbook SC01”.
1996 Oct 03
3
337904749.005.png
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYW54 to BYW56
GRAPHICAL DATA
MBG044
MBG054
3
1.6
handbook, halfpage
handbook, halfpage
I F(AV)
(A)
I F(AV)
(A)
1.2
2
0.8
1
0.4
0
0
0
40
80
120
160
T tp ( ° C)
200
0
40
80
120
160
T amb ( ° C)
200
a = 1.57; V R =V RRMmax ;
d
= 0.5; lead length 10 mm.
a = 1.57; V R =V RRMmax ;
d
= 0.5; device mounted as shown in Fig.9.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC745
MBH387
4
200
handbook, halfpage
P
(W)
3
T j
2
1.57
1.42
(
°
C)
2.5
2
100
a = 3
54
55
56
1
0
0
0
400
800
1200
0
1
2
3
V R (V)
I F(AV) (A)
a=I F(RMS) /I F(AV) ; V R =V RRMmax ;
d
= 0.5.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Solid line = V R .
Dotted line = V RRM ; d = 0.5.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
1996 Oct 03
4
337904749.006.png
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYW54 to BYW56
MGC735
MGC734
15
10 3
handbook, halfpage
handbook, halfpage
I F
I R
(A)
m
A)
10
2
10
max
10
5
1
0
10 - 1
0
1
2
0
40
80
120
160
T j ( o C)
200
V F (V)
C.
Dotted line: T j =T j max .
°
V R =V RRMmax .
Fig.6 Forward current as a function of forward
voltage; maximum values.
Fig.7 Reverse current as a function of junction
temperature; maximum values.
MBG031
10 2
handbook, halfpage
50
25
handbook, halfpage
C d
(pF)
7
10
50
2
1
3
1
10
V R (V)
10 2
MGA200
f = 1 MHz; T j =25
°
C.
Dimensions in mm.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 Oct 03
5
(
Solid line: T j =25
337904749.001.png 337904749.002.png

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