BYW95.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYW95 series
Fast soft-recovery
controlled avalanche rectifiers
Product specication
Supersedes data of December 1979
File under Discrete Semiconductors, SC01
1996 Jun 07
337904750.040.png
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYW95 series
FEATURES
DESCRIPTION
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
·
Glass passivated
Rugged glass SOD64 package,
using a high temperature alloyed
·
High maximum operating
temperature
·
Low leakage current
·
Excellent stability
2/3 pa ge (Datas heet)
k
a
·
Guaranteed avalanche energy
absorption capability
MAM104
·
Available in ammo-pack
·
Also available with preformed leads
for easy insertion.
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V RRM
repetitive peak reverse voltage
BYW95A
-
200 V
BYW95B
-
400 V
BYW95C
-
600 V
V R
continuous reverse voltage
BYW95A
-
200 V
BYW95B
-
400 V
BYW95C
-
600 V
I F(AV)
average forward current
C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
°
-
3.00 A
C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
°
-
1.25 A
I FRM
repetitive peak forward current
T tp = 60
°
C; see Fig.4
-
30 A
T amb = 65
°
C; see Fig.5
-
13 A
I FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T j = T j max prior to surge;
V R = V RRMmax
-
70 A
E RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T j = T j max prior to
surge; inductive load switched off
-
10 mJ
T stg
storage temperature
- 65
+175
° C
T j
junction temperature
see Fig.7
-
65
+175
°
C
1996 Jun 07
2
T tp = 60
T amb = 65
337904750.041.png 337904750.042.png 337904750.043.png
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYW95 series
ELECTRICAL CHARACTERISTICS
T j = 25 ° C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V F
forward voltage
I F = 5 A; T j = T j max ; see Fig.8
-
-
1.25
V
I F = 5 A; see Fig.8
-
-
1.50
V
V (BR)R
reverse avalanche
breakdown voltage
I R = 0.1 mA
BYW95A
300
-
-
V
BYW95B
500
-
-
V
BYW95C
700
-
-
V
I R
reverse current
V R = V RRMmax ;
see Fig.9
-
-
1
m
A
V R = V RRMmax ; T j = 165 ° C;
see Fig.9
-
-
150
m A
t rr
reverse recovery time
when switched from I F = 0.5 A
to I R = 1 A; measured at
I R = 0.25 A; see Fig.12
-
-
250
ns
C d
diode capacitance
f = 1 MHz; V R = 0 V; see Fig.10
-
85
-
pF
dI R
dt
maximum slope of
reverse recovery current
when switched from I F = 1 A to
V R ³
-
-
7
A/
m
s
--------
30 V and dI F /dt =
-
1 A/
m
s;
see Fig.13
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
R th j-a
thermal resistance from junction to ambient
note 1
75
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
³
40
m
m, see Fig.11.
For more information please refer to the ‘General Part of Handbook SC01.’
1996 Jun 07
3
337904750.001.png
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYW95 series
GRAPHICAL DATA
MGC609
MGC608
handbook, halfpage
4
handbook, halfpage
2.0
I F(AV)
I F(AV)
(A)
(A)
1.6
3
1.2
2
0.8
1
0.4
0
0
0
100
T tp ( C)
200
0
100
T amb ( C)
200
a = 1.42; V R = V RRMmax ; d = 0.5.
Switched mode application.
a = 1.42; V R = V RRMmax ; d = 0.5.
Device mounted as shown in Fig.11.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC606
40
handbook, full pagewidth
I FRM
(A)
=
0.05
30
20
0.1
0.2
10
0.5
1.0
0
10
–2
10
–1
1
10
10 2
10 3
t p (ms)
10 4
T tp = 60 ° C; R th j-tp = 25 K/W.
V RRMmax during 1
- d
; curves include derating for T j max at V RRM = 600 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 07
4
o
o
d
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Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYW95 series
MGC607
handbook, full pagewidth
16
I FRM
(A)
=
0.05
12
0.1
8
0.2
4
0.5
1.0
0
10
–2
10
–1
1
10
10 2
10 3
10 4
t p (ms)
T amb = 65 ° C; R th j-a = 75 K/W.
V RRMmax during 1
- d
; curves include derating for T j max at V RRM = 600 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGC611
MGC575
handbook, halfpage
5
handbook, halfpage
200
a=3
2.5
2
1.57
P
(W)
1.42
4
T j
( C)
3
100
2
A
B
C
1
0
0
0
2
4
0
200
400
600
800
I F(AV) (A)
V R (V)
a = I F(RMS) /I F(AV) ; V R = V RRMmax ; d = 0.5.
Fig.6 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Solid line = V R .
Dotted line = V RRM ;
d
= 0.5.
Fig.7 Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jun 07
5
d
o
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