BYG90_40.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D113
BYG90-40 series
Schottky barrier rectifier diodes
Product specification
File under Discrete Semiconductors, SC01
1996 May 06
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Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
FEATURES
·
Low switching losses
·
Capability of absorbing very high
surge current
·
Fast recovery time
handbook, 4 columns
cathode identifier
·
Guard ring protected
·
Plastic SMD package.
k
a
APPLICATIONS
·
Low power switched-mode power
supplies
Top view
MAM129 - 1
·
Rectifying
·
Polarity protection.
DESCRIPTION
Fig.1 Simplified outline (SOD106A), pin configuration and symbol.
The BYG 90-40 series consists of
Schottky barrier rectifier diodes,
fabricated in planar technology, and
encapsulated in rectangular
SOD106A plastic SMD packages.
1996 May 06
2
k
a
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Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V R
continuous reverse voltage
BYG90-20
-
20
V
BYG90-30
-
30
V
BYG90-40
-
40
V
V RRM
repetitive peak reverse voltage
BYG90-20
-
20
V
BYG90-30
-
30
V
BYG90-40
-
40
V
V RWM
crest working reverse voltage
BYG90-20
-
20
V
BYG90-30
-
30
V
BYG90-40
-
40
V
I F(AV)
average forward current
C; see Fig.2;
R th j-a = 80 K/W; note 1;
V R(equiv) = 0.2 V; note 2
°
-
1
A
I FSM
non-repetitive peak forward current
t = 8.3 m s half sine wave;
JEDEC method
-
30
A
I RSM
non-repetitive peak reverse current
t p = 100
m
s
-
0.5
A
T stg
storage temperature
-
65
+125
°
C
T j
junction temperature
-
125
°
C
Notes
1. Refer to SOD106A standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P R are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P R and I F(AV) rating will be available on request.
1996 May 06
3
T amb =65
337904707.004.png
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
ELECTRICAL CHARACTERISTICS
T amb =25 ° C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
V F
forward voltage
see Fig.2; note 1
I F =1A
-
-
550
mV
I F =3A
-
-
850
mV
I F = 1 A; T j = 100
C
-
-
450
mV
I R
reverse current
V R =V RRMmax ; note 1; see Fig.3
-
-
1
mA
V R =V RRMmax ; T j = 100
°
C; note 1;
-
-
10
mA
see Fig.3
C d
diode capacitance
V R = 4 V; f = 1 MHz; see Fig.4
-
-
75
pF
Note
1. Pulsed test: t p = 300
m
s;
d
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
80
K/W
Note
1. Refer to SOD106A standard mounting conditions.
1996 May 06
4
°
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Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
GRAPHICAL DATA
MLC388
10 4
MLC389
10 4
handbook, halfpage
handbook, halfpage
(1)
I F
(mA)
I R
( m A)
(2)
10 3
10 3
(3)
10 2
(1)
(2)
(3)
10 2
(4)
(4)
10
10
1
1
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1.0
V (V)
V (V)
R
F
(1) T amb = 125
°
C.
(1) T amb = 125
°
C.
C.
(3) T amb =75 ° C.
(4) T amb =25
°
C.
(3) T amb =75 ° C.
(4) T amb =25
°
°
C.
°
C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
10 3
MLC390
handbook, halfpage
C d
(pF)
10 2
10
0
8
16
24
32
40
V (V)
R
f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1996 May 06
5
(2) T amb = 100
(2) T amb = 100
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