BYG70.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D168
BYG70 series
Fast soft-recovery
controlled avalanche rectifiers
Preliminary specication
File under Discrete Semiconductors, SC01
1996 Jun 05
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Philips Semiconductors
Preliminary specication
Fast soft-recovery
controlled avalanche rectiers
BYG70 series
FEATURES
DESCRIPTION
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
·
Glass passivated
DO-214AC surface mountable
package with glass passivated chip.
·
High maximum operating
temperature
·
Low leakage current
·
Excellent stability
handbook, 4 columns
cathode
band
·
Guaranteed avalanche energy
absorption capability
k
a
·
UL 94V-O classified plastic
package
·
Shipped in 12 mm embossed tape.
Top view
Side view
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V RRM
repetitive peak reverse voltage
BYG70D
-
200 V
BYG70G
-
400 V
BYG70J
-
600 V
V R
continuous reverse voltage
BYG70D
-
200 V
BYG70G
-
400 V
BYG70J
-
600 V
I F(AV)
average forward current
averaged over any 20 ms period;
T tp = 100 ° C; see Fig.2
-
1.00 A
averaged over any 20 ms period;
Al 2 O 3 PCB mounting (see Fig.7);
T amb = 60
-
0.53 A
°
C; see Fig.3
averaged over any 20 ms period;
epoxy PCB mounting (see Fig.7);
T amb = 60
-
0.39 A
°
C; see Fig.3
I FSM
non-repetitive peak forward current t = 10 ms half sine wave;
T j = T j max prior to surge;
V R = V RRMmax
-
20 A
E RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T j = T j max prior to surge;
inductive load switched off
-
10 mJ
T stg
storage temperature
-
65
+175
°
C
T j
junction temperature
see Fig.4
-
65
+175
°
C
1996 Jun 05
2
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Philips Semiconductors
Preliminary specication
Fast soft-recovery
controlled avalanche rectiers
BYG70 series
ELECTRICAL CHARACTERISTICS
T j = 25 ° C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V F
forward voltage
I F = 1 A; T j = T j max; see Fig.5
-
-
2.1
V
I F = 1 A; see Fig.5
-
-
3.6
V
V (BR)R
reverse avalanche
breakdown voltage
I R = 0.1 mA
BYG70D
300
-
-
V
BYG70G
500
-
-
V
BYG70J
700
-
-
V
I R
reverse current
V R = V RRMmax ;
see Fig.6
-
-
5
m
A
V R = V RRMmax ; T j = 165 ° C;
see Fig.6
-
-
100
m A
t rr
reverse recovery time
when switched from I F = 0.5 A to
I R = 1 A; measured at I R = 0.25 A;
see Fig.8
-
-
30
ns
C d
diode capacitance
V R = 0 V; f = 1 MHz
-
30
-
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point
25
K/W
R th j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
Notes
1. Device mounted on Al 2 O 3 printed-circuit board, 0.7 mm thick; thickness of copper
³
35
m
m, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
³
40
m
m, see Fig.7.
For more information please refer to the ‘General Part of Handbook SC01’.
1996 Jun 05
3
337904705.004.png
Philips Semiconductors
Preliminary specication
Fast soft-recovery
controlled avalanche rectiers
BYG70 series
GRAPHICAL DATA
MGD485
MGD486
2.0
I F(AV)
(A)
0.8
I F(AV)
(A)
handbook, halfpage
handbook, halfpage
1.5
0.6
1.0
0.4
0.5
0.2
0
0
0
100
200
0
100
200
T tp ( ° C)
T amb ( ° C)
= 0.5; a = 1.57.
Device mounted as shown in Fig.7;
solid line: Al 2 O 3 PCB; dotted line: epoxy PCB.
d
V R = V RRMmax ;
d
= 0.5; a = 1.57.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGD487
MGD488
200
T j
5
I F
(A)
handbook, halfpage
handbook, halfpage
°
C)
160
4
120
3
80
2
D
G
J
40
1
0
0
0
400
800
0
2
4
6
8
V R (V)
V F (V)
Device mounted as shown in Fig.7.
Solid line: Al 2 O 3 PCB.
Dotted line: epoxy PCB.
C.
Dotted line: T j = 175 ° C.
°
Fig.4 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.5 Forward current as a function of forward
voltage; maximum values.
1996 Jun 05
4
V R = V RRMmax ;
(
Solid line: T j = 25
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Philips Semiconductors
Preliminary specication
Fast soft-recovery
controlled avalanche rectiers
BYG70 series
MGC532
10 3
handbook, halfpage
50
I R
m
A)
10 2
4.5
50
10
2.5
1
1.25
MSB213
0
100
200
o
T j ( C)
V R = V RMMmax .
Dimensions in mm.
Material: AL 2 O 3 or epoxy-glass.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
Fig.7 Printed-circuit board for surface mounting.
handbook, full pagewidth
DUT
I F
(A)
+
0.5
t rr
10
W
25 V
1
W
50
W
0
t
0.25
0.5
I R
(A)
1
MAM057
Input impedance oscilloscope: 1 M W , 22 pF; t r £ 7 ns.
Source impedance: 50 W ; t r £ 15 ns.
Fig.8 Test circuit and reverse recovery time waveform and definition.
1996 Jun 05
5
(
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