BYD73.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D119
BYD73 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
File under Discrete Semiconductors, SC01
1996 Sep 18
337904701.005.png
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
FEATURES
DESCRIPTION
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
·
Glass passivated
Cavity free cylindrical glass SOD81
package through Implotec ä
(1)
technology. This package is
·
High maximum operating
temperature
(1) Implotec is a trademark of Philips.
·
Low leakage current
·
Excellent stability
·
Guaranteed avalanche energy
absorption capability
handbook, 4 columns
k
a
·
Available in ammo-pack.
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V RRM
repetitive peak reverse voltage
BYD73A
-
50 V
BYD73B
-
100 V
BYD73C
-
150 V
BYD73D
-
200 V
BYD73E
-
250 V
BYD73F
-
300 V
BYD73G
-
400 V
V R
continuous reverse voltage
BYD73A
-
50 V
BYD73B
-
100 V
BYD73C
-
150 V
BYD73D
-
200 V
BYD73E
-
250 V
BYD73F
-
300 V
BYD73G
-
400 V
I F(AV)
average forward current
C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
°
BYD73A to D
-
1.75 A
BYD73E to G
-
1.70 A
I F(AV)
average forward current
C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
°
BYD73A to D
-
1.00 A
BYD73E to G
-
0.95 A
1996 Sep 18
2
T tp =55
T amb =60
337904701.006.png 337904701.007.png 337904701.008.png
 
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I FRM
repetitive peak forward current
T tp =55
°
C; see Figs 6 and 7
BYD73A to D
-
14 A
BYD73E to G
-
15 A
I FRM
repetitive peak forward current
T amb =60 ° C; see Figs 8 and 9
BYD73A to D
-
8.5
A
BYD73E to G
-
9.5
A
I FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T j =T j max prior to surge;
V R =V RRMmax
-
25 A
E RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T j =T j max prior to
surge; inductive load switched off
-
10 mJ
T stg
storage temperature
-
65
+175
°
C
T j
junction temperature
- 65
+175
° C
ELECTRICAL CHARACTERISTICS
T j =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V F
forward voltage
I F = 1 A; T j =T j max ;
see Figs 12 and 13
BYD73A to D
-
-
0.75 V
BYD73E to G
-
-
0.83 V
V F
forward voltage
I F =1A;
see Figs 12 and 13
BYD73A to D
-
-
0.98 V
BYD73E to G
-
-
1.05 V
V (BR)R
reverse avalanche breakdown
voltage
I R = 0.1 mA
BYD73A
55
-
-
V
BYD73B
110
-
-
V
BYD73C
165
-
-
V
BYD73D
220
-
-
V
BYD73E
275
-
-
V
BYD73F
330
-
-
V
BYD73G
440
-
-
V
I R
reverse current
V R =V RRMmax ;
see Fig.14
-
-
1
m
A
V R =V RRMmax ;
T j = 165
-
-
100
m
A
°
C; see Fig.14
t rr
reverse recovery time
when switched from
I F = 0.5 A to I R =1A;
measured at I R = 0.25 A;
see Fig.18
BYD73A to D
-
-
25
ns
BYD73E to G
-
-
50
ns
1996 Sep 18
3
°
337904701.001.png
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C d
diode capacitance
f = 1 MHz; V R =0V;
see Fig.15
BYD73A to D
-
50
-
pF
BYD73E to G
-
40
-
pF
dI R
dt
maximum slope of reverse recovery
current
when switched from
I F = 1 A to V R ³ 30 V
and dI F /dt =
-
1A/
m
s;
BYD73A to D
-
-
4/
m
s
see Fig.17
BYD73E to G
-
-
5/
m
s
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
60
K/W
R th j-a
thermal resistance from junction to ambient
note 1
120
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
³
40
m
m, see Fig.16.
For more information please refer to the ‘General Part of Handbook SC01.’
1996 Sep 18
4
--------
337904701.002.png 337904701.003.png
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
GRAPHICAL DATA
handbook, halfpage
MGC535
handbook, halfpage
MGC536
2.0
2.0
I F(AV)
(A)
I F(AV)
(A)
1.6
lead length 10 mm
1.6
lead length 10 mm
1.2
1.2
0.8
0.8
0.4
0.4
0
0
0
100
200
0
100
200
o
o
T tp ( C)
T tp ( C)
= 0.5.
Switched mode application.
d
= 0.5.
Switched mode application.
d
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGC538
MGC537
1.6
I F(AV)
1.6
I F(AV)
(A)
(A)
1.2
1.2
0.8
0.8
0.4
0.4
0
0
0
100
o
200
0
100
o
200
T amb ( C)
T amb ( C)
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
d
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
d
Fig.4 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1996 Sep 18
5
BYD73A to D
a = 1.42; V R =V RRMmax ;
BYD73E to G
a = 1.42; V R =V RRMmax ;
handbook, halfpage
handbook, halfpage
BYD73A to D
a = 1.42; V R =V RRMmax ;
BYD73E to G
a = 1.42; V R =V RRMmax ;
337904701.004.png

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