BY584.PDF

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D189

BY584

High-voltage soft-recovery rectifier

Product specication

Supersedes data of May 1996

File under Discrete Semiconductors, SC01

1996 Sep 26

Philips Semiconductors

Product specication

High-voltage soft-recovery rectier

BY584

FEATURES

DESCRIPTION

expansion of all used parts are

matched.

Glass passivated

Rugged glass package, using a high

temperature alloyed construction.

This package is hermetically sealed

and fatigue free as coefficients of

The package is designed to be used

in an insulating medium such as

resin, oil or SF6 gas.

High maximum operating

temperature

Low leakage current

Excellent stability

Soft-recovery switching

characteristics

Compact construction.

handbook, halfpage

APPLICATIONS

MAM162

Grid 2 supply in colour television

picture tubes

High-voltage applications for:

– High frequencies

– Switching applications.

The cathode lead is marked with an orange band.

Fig.1 Simplified outline (SOD61A) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V RSM

non-repetitive peak reverse voltage

1800 V

V RRM

repetitive peak reverse voltage

1800 V

V RW

working reverse voltage

1500 V

I F(AV)

average forward current

averaged over any 20 ms period;

T tp =25

85 mA

C; lead length = 10 mm;

see Fig.2; see also Fig.4

averaged over any 20 ms period;

T amb =60

50 mA

C; PCB mounting

(see Fig.6); see Fig.3;

see also Fig.4

I FRM

repetitive peak forward current

800 mA

I FSM

non-repetitive peak forward current

10 ms; half sinewave;

T j =T j max prior to surge;

V R =V RWmax

stg

storage temperature

- 65

+120

° C

T j

junction temperature

+120

1996 Sep 26

Philips Semiconductors

Product specication

High-voltage soft-recovery rectier

BY584

ELECTRICAL CHARACTERISTICS

T j =25 ° C; unless otherwise specied.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V F

forward voltage

I F = 100 mA; T j =T j max ; see Fig.5

8.5

I R

reverse current

V R =V RWmax ; T j =T j max

m A

Q r

recovery charge

when switched from I F = 100 mA to

V R ³

100 V and dI F /dt =

200 mA/

see Fig.7

t f

fall time

when switched from I F = 100 mA to

V R ³ 100 V and dI F /dt = - 200 mA/ m s;

see Fig.7

100

t rr

reverse recovery time

when switched from I F = 100 mA to

V R ³

200

100 V and dI F /dt =

200 mA/

see Fig.7

C d

diode capacitance

V R = 0 V; f = 1 MHz

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

100

K/W

R th j-a

thermal resistance from junction to ambient

note 1

155

K/W

Note

1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper

m, see Fig.6.

For more information please refer to the “General Part of Handbook SC01”.

1996 Sep 26

Philips Semiconductors

Product specication

High-voltage soft-recovery rectier

BY584

GRAPHICAL DATA

MBH399

100

MBH400

100

handbook, halfpage

I F(AV)

(mA)

I F(AV)

(mA)

T tp ( ° C)

120

T amb (

120

Switched mode application.

a = 1.42; d = 0.5; V R =V RWmax ; lead length = 10 mm.

Switched mode application.

a = 1.42; d = 0.5; V R =V RWmax ; device mounted as shown in Fig.6.

Fig.2 Maximum permissible average forward

current as a function of tie-point

temperature (including losses due to

reverse leakage).

Fig.3 Maximum permissible average forward

current as a function of ambient

temperature (including losses due to

reverse leakage).

MBH401

MBH402

1000

200

handbook, halfpage

a = 3 2.5

2 1.57

1.42

(mW)

I F

(mA)

500

100

I F(AV) (mA)

100

V F (V)

a=I F(RMS) /I F(AV) ;

= 0.5; V R =V RWmax .

Dotted line: T j = 120 ° C.

Solid line: T j =25 ° C.

Fig.4 Maximum steady state power dissipation

(forward plus leakage losses) as a function

of average forward current.

Fig.5 Forward current as a function of maximum

forward voltage.

1996 Sep 26

Philips Semiconductors

Product specication

High-voltage soft-recovery rectier

BY584

handbook, halfpage

I F

t rr

10%

90%

I R

t f

MGD569

MGA200

Dimensions in mm.

Fig.6 Device mounted on a printed-circuit board.

Fig.7 Reverse recovery definitions.

APPLICATION INFORMATION

handbook, full pagewidth

V I

V IM = 1500 V

V I

D1 V O

11.5 m s

64 m s

horizontal

deflection-

transformer

150 nF

1 M

to g 2

V O

V OM

V O(AV) = 1500 V

MBH419

D1 = BY584.

Stable continuous operation is ensured at ambient temperatures up to 70 ° C.

Fig.8 Basic circuit and waveforms for grid 2 voltage supply in colour television picture tubes.

1996 Sep 26

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