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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D189
BY584
High-voltage soft-recovery rectifier
Product specication
Supersedes data of May 1996
File under Discrete Semiconductors, SC01
1996 Sep 26
Philips Semiconductors
Product specication
High-voltage soft-recovery rectier
BY584
FEATURES
DESCRIPTION
expansion of all used parts are
matched.
·
Glass passivated
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
·
High maximum operating
temperature
·
Low leakage current
·
Excellent stability
·
Soft-recovery switching
characteristics
·
Compact construction.
a
handbook, halfpage
k
APPLICATIONS
MAM162
·
Grid 2 supply in colour television
picture tubes
·
High-voltage applications for:
– High frequencies
– Switching applications.
The cathode lead is marked with an orange band.
Fig.1 Simplified outline (SOD61A) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
non-repetitive peak reverse voltage
-
1800 V
V
RRM
repetitive peak reverse voltage
-
1800 V
V
RW
working reverse voltage
-
1500 V
I
F(AV)
average forward current
averaged over any 20 ms period;
T
tp
=25
-
85 mA
C; lead length = 10 mm;
see Fig.2; see also Fig.4
°
averaged over any 20 ms period;
T
amb
=60
-
50 mA
C; PCB mounting
(see Fig.6); see Fig.3;
see also Fig.4
°
I
FRM
repetitive peak forward current
-
800 mA
I
FSM
non-repetitive peak forward current
10 ms; half sinewave;
T
j
=T
j max
prior to surge;
V
R
=V
RWmax
£
-
5A
stg
storage temperature
-
65
+120
°
C
T
j
junction temperature
-
65
+120
°
C
1996 Sep 26
2
t
Philips Semiconductors
Product specication
High-voltage soft-recovery rectier
BY584
ELECTRICAL CHARACTERISTICS
T
j
=25
°
C; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 100 mA; T
j
=T
j max
; see Fig.5
-
-
8.5
V
I
R
reverse current
V
R
=V
RWmax
; T
j
=T
j max
-
-
3
m
A
Q
r
recovery charge
when switched from I
F
= 100 mA to
V
R
³
-
-
1
nC
100 V and dI
F
/dt =
-
200 mA/
m
s;
see Fig.7
t
f
fall time
when switched from I
F
= 100 mA to
V
R
³
100 V and dI
F
/dt =
-
200 mA/
m
s;
see Fig.7
100
-
-
ns
t
rr
reverse recovery time
when switched from I
F
= 100 mA to
V
R
³
-
200
-
ns
100 V and dI
F
/dt =
-
200 mA/
m
s;
see Fig.7
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz
-
2
-
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
100
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
155
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
³
40
m
m, see Fig.6.
For more information please refer to the “General Part of Handbook SC01”.
1996 Sep 26
3
Philips Semiconductors
Product specication
High-voltage soft-recovery rectier
BY584
GRAPHICAL DATA
MBH399
100
MBH400
100
handbook, halfpage
handbook, halfpage
I
F(AV)
(mA)
I
F(AV)
(mA)
80
80
60
60
40
40
20
20
0
0
0
40
80
T
tp
(
°
C)
120
0
40
80
T
amb
(
°
C)
120
Switched mode application.
a = 1.42;
d
= 0.5; V
R
=V
RWmax
; lead length = 10 mm.
Switched mode application.
a = 1.42;
d
= 0.5; V
R
=V
RWmax
; device mounted as shown in Fig.6.
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
MBH401
MBH402
1000
200
handbook, halfpage
handbook, halfpage
a = 3 2.5
2 1.57
1.42
P
(mW)
I
F
(mA)
500
100
0
0
0
80
I
F(AV)
(mA)
100
0
10
V
F
(V)
20
a=I
F(RMS)
/I
F(AV)
;
d
= 0.5; V
R
=V
RWmax
.
Dotted line: T
j
= 120
°
C.
Solid line: T
j
=25
°
C.
Fig.4 Maximum steady state power dissipation
(forward plus leakage losses) as a function
of average forward current.
Fig.5 Forward current as a function of maximum
forward voltage.
1996 Sep 26
4
Philips Semiconductors
Product specication
High-voltage soft-recovery rectier
BY584
handbook, halfpage
50
25
handbook, halfpage
I
F
7
dI
dt
F
50
t
rr
10%
t
2
Q
r
90%
3
I
R
t
f
MGD569
MGA200
Dimensions in mm.
Fig.6 Device mounted on a printed-circuit board.
Fig.7 Reverse recovery definitions.
APPLICATION INFORMATION
handbook, full pagewidth
V
I
V
IM
=
1500 V
V
I
D1
V
O
0
t
11.5
m
s
64
m
s
horizontal
deflection-
transformer
150 nF
1 M
W
to g
2
V
O
V
OM
V
O(AV)
= 1500 V
MBH419
0
t
D1 = BY584.
Stable continuous operation is ensured at ambient temperatures up to 70
°
C.
Fig.8 Basic circuit and waveforms for grid 2 voltage supply in colour television picture tubes.
1996 Sep 26
5
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