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Philips Semiconductors
Product specification
fast, high-voltage
BY359X-1500S
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass-passivated double diffused
SYMBOL PARAMETER
MAX. UNIT
rectifier diode in a plastic envelope
featuring low forward voltage drop,
V RRM
Repetitive peak reverse voltage
1500
V
fast reverse recovery and soft
V F
Forward voltage
BY359X-1500
1.8
V
recovery characteristic. The device is
BY359X-1500S
2.0
V
intended for use in TV receivers and
I F(RMS)
RMS forward current
15.7
A
PC monitors.
I FSM
Non-repetitive peak forward current
60
A
t rr
Reverse recovery time
BY359X-1500
0.60
m
s
BY359X-1500S 0.35
m
s
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1
cathode
2
anode
k
a
case isolated
1
2
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX. UNIT
V RSM
Non-repetitive peak reverse
-
1500
V
voltage
V RRM
Repetitive peak reverse voltage
-
1500
V
V RWM
Crest working reverse voltage
-
1300
V
I F(peak)
Peak forward current
16-32kHz TV
BY359X-1500
-
10
A
31-64kHz monitor
BY359X-1500S
-
7
A
I F(RMS)
RMS forward current
-
15.7
A
I FRM
Repetitive peak forward current sinusoidal; a = 1.57
-
60
A
I FSM
Non-repetitive peak forward
t = 10 ms
-
60
A
current
t = 8.3 ms
-
66
A
sinusoidal; T j = 150 ˚C prior to surge;
with reapplied V RWM(max)
T stg
Storage temperature
-40
150
˚C
T j
Operating junction temperature
-
150
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
June 1997
1
Rev 1.100
Damper diode
BY359X-1500
337904667.007.png
Philips Semiconductors
Product specification
fast, high-voltage
BY359X-1500S
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance junction to with heatsink compound
-
-
4.8
K/W
heatsink
without heatsink compound
-
-
5.9
K/W
R th j-a
Thermal resistance junction to in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
BY359X-1500 BY359X-1500S
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. TYP. MAX. UNIT
V F
Forward voltage
I F = 20 A
1.3
1.8
1.5
2.0
V
I F = 10 A; T j = 150˚C
1.00
1.5
1.25
1.75
V
I R
Reverse current
V R = 1300 V
10
100
10
100
m
A
V R = 1300 V;
50
300
100
600
m
A
T j = 100 ˚C
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
BY359X-1500 BY359X-1500S
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. TYP. MAX. UNIT
t rr
Reverse recovery time
I F = 2 A; V R
³
30 V;
0.47
0.60
0.28
0.35
m
s
Q s
Reverse recovery charge
-dI F /dt = 20 A/
m
s
1.6
2.0
0.70
0.95
m
C
V fr
Peak forward recovery voltage
I F = 10 A;
11.0
-
17.0
-
V
dI F /dt = 30 A/
m
s
I F
dI
F
I F
dt
trr
time
time
V F
Qs
25%
100%
V fr
I R
I rrm
V F
time
Fig.1. Definition of t rr , Q s and I rrm
Fig.2. Definition of V fr
June 1997
2
Rev 1.100
Damper diode
BY359X-1500
337904667.008.png 337904667.009.png
Philips Semiconductors
Product specification
fast, high-voltage
BY359X-1500S
80
IFS(RMS) / A
BY359
30
IF / A
BY359
Tj=150C
70
IFSM
Tj=25C
60
50
20
40
30
10
typ
20
10
max
0
1ms
10ms
0.1s
1s
10s
0
0
1.0
2.0
tp / s
VF / V
Fig.3. Maximum non-repetitive rms forward current.
I F = f(t p ); sinusoidal current waveform; T j = 150˚C prior
to surge with reapplied V RWM .
Fig.5. BY359X-1500 forward characteristic I F = f(V F );
parameter T j
IF / A
BY359S
30
Zth j-hs / (K/W)
10
Tj=150C
Tj=25C
20
1
10
typ
0.1
P
t p
D
max
t
0
0.01
10us
0
1.0
2.0
VF / V
100us
1ms
10ms
0.1s
1s
10s
tp / s
Fig.6. BY359X-1500S forward characteristic
I F = f(V F ); parameter T j
Fig.4. Transient thermal impedance Z th = f(t p )
June 1997
3
Rev 1.100
Damper diode
BY359X-1500
337904667.010.png 337904667.001.png 337904667.002.png 337904667.003.png
Philips Semiconductors
Product specification
fast, high-voltage
BY359X-1500S
MECHANICAL DATA
Dimensions in mm
10.3
max
4.6
max
Net Mass: 2 g
3.2
3.0
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
max.
19
max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
2
0.4
M
1.0 (2x)
0.6
0.9
0.7
2.54
0.5
5.08
2.5
Fig.7. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
June 1997
4
Rev 1.100
Damper diode
BY359X-1500
337904667.004.png 337904667.005.png 337904667.006.png

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