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Philips Semiconductors
Product specification
fast, high-voltage
BY329X-1700S
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass-passivated double diffused
SYMBOL PARAMETER
MAX. UNIT
rectifier diode in a full plastic envelope
featuring low forward voltage drop,
V RRM
Repetitive peak reverse voltage
1700
V
fast reverse recovery and soft
V F
Forward voltage
1.5
V
recovery characteristic. The device is
I F(RMS)
Working peak forward current
10
A
intended for use in TV receivers and
I FSM
Repetitive peak forward current
60
A
PC monitors.
t rr
Reverse recovery time
0.17
m
s
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1
cathode
2
anode
k
a
case isolated
1
2
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V RSM
Non repetitive peak reverse
-
1700
V
voltage
V RRM
Repetitive peak reverse voltage
-
1700
V
V RWM
Crest working reverse voltage
-
1300
V
I FWM
Working peak forward current f = 16 kHz
-
6
A
f = 56 kHz
-
4
A
I FRM
Repetitive peak forward current t = 25
m
s;
d
= 0.5; T hs
£
91 ˚C
-
14
A
I F(RMS)
RMS forward current
-
10
A
I FSM
Non repetitive peak forward
t = 10 ms
-
60
A
current
sinusoidal; T j = 150 ˚C prior to
surge; with reapplied V RWM(max)
T stg
Storage temperature
-40
150
˚C
T j
Operating junction temperature
-
150
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
October 1997
1
Rev 1.000
Damper diode
337904666.008.png
Philips Semiconductors
Product specification
fast, high-voltage
BY329X-1700S
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance junction to with heatsink compound
-
-
4.8
K/W
heatsink
without heatsink compound
-
-
5.9
K/W
R th j-a
Thermal resistance junction to in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V F
Forward voltage
I F = 6.5 A
-
1.35 1.65
V
I F = 6.5 A; T j = 125 ˚C
-
1.2
1.5
V
I R
Reverse current
V R = V RWMmax
-
-
250
m
A
V R = V RWMmax ; T j = 125 ˚C
-
-
1.0
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V fr
Forward recovery voltage
I F = 6.5 ; dI F /dt = 50 A/
m
s
-
30
40
V
t fr
Forward recovery time
I F = 6.5 A; dI F /dt = 50 A/
m
s; V F = 5 V
-
300
320
ns
t rr
Reverse recovery time
I F = 1 A; -dI F /dt = 50 A/
m
s; V R
³
30 V
-
130
170
ns
Q s
Reverse recovery charge
I F = 2 A; -dI F /dt = 20 A/
m
s; V R
³
30 V
-
0.7
1.0
m
C
I F
I F
dI
F
dt
trr
10%
tfr
time
time
V F
Qs
25%
100%
V fr
5V
I
R
V F
time
Fig.1. Definition of Vfr and tfr
Fig.2. Definition of t rr and Q s
October 1997
2
Rev 1.000
Damper diode
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Philips Semiconductors
Product specification
fast, high-voltage
BY329X-1700S
VCC
30
IF / A
BY329S17
Tj = 125 C
Tj = 25 C
Line output transformer
20
LY
10
Cf
Cs
typ
deflection transistor
D1
max
0
0
0.5
1
1.5
VF / V
2
Fig.3. Basic horizontal deflection circuit.
Fig.5. BY329-1500S Typical and maximum forward
characteristic I F = f(V F ); parameter T j
100
Maximum pulse width / us
BY459X-1500
10
Zth j-hs / (K/W)
VRRM
V
pulse
time
1
width tp
period T
10
0.1
t p
P
D
t
1
10
100
0.01
10us
100us
1ms
10ms
0.1s
1s
10s
line frequency / kHz
tp / s
Fig.4. Maximum allowable pulse width t p versus line
frequency; Basic horizontal deflection circuit.
Fig.6. Transient thermal impedance Z th = f(t p )
October 1997
3
Rev 1.000
Damper diode
337904666.011.png 337904666.001.png 337904666.002.png
Philips Semiconductors
Product specification
fast, high-voltage
BY329X-1700S
MECHANICAL DATA
Dimensions in mm
10.3
max
4.6
max
Net Mass: 2 g
3.2
3.0
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
max.
19
max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
2
0.4
M
1.0 (2x)
0.6
0.9
0.7
2.54
0.5
5.08
2.5
Fig.7. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
4
Rev 1.000
Damper diode
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Philips Semiconductors
Product specification
fast, high-voltage
BY329X-1700S
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Ó
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
5
Rev 1.000
Damper diode
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
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