BY329_15.PDF

(39 KB) Pobierz
337904663 UNPDF
Philips Semiconductors
Product specification
fast, high-voltage
BY329-1500S
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass-passivated double diffused
SYMBOL PARAMETER
MAX. MAX. UNIT
rectifier diode in a plastic envelope
featuring low forward voltage drop,
BY329
-1500 -1500S
fast reverse recovery and soft
V RRM
Repetitive peak reverse voltage
1500
1500
V
recovery characteristic. The
V F
Forward voltage
1.35
1.5
V
device is intended for use in TV
I F(RMS)
RMS forward current
11
11
A
receivers and PC monitors.
I FSM
Non repetitive peak forward current
75
75
A
t rr
Reverse recovery time
0.23
0.16
m
PINNING - TO220AC
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
1
cathode (k)
2
anode (a)
k
a
1
2
tab cathode (k)
1
2
LIMITING VALUES
Limiting values accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V RSM
Non repetitive peak reverse
-
1500
V
voltage
V RRM
Repetitive peak reverse
-
1500
V
voltage
V RWM
Crest working reverse voltage
-
1300
V
-1500 -1500S
I F(peak)
Working peak forward current f = 16 kHz
-
6
-
A
f = 56 kHz
-
-
4
A
I FRM
Repetitive peak forward
t = 25
m
s;
d
= 0.5;
-
14
A
current
T mb
£
123 ˚C
I F(RMS)
RMS forward current
-
11
A
I FSM
Non repetitive peak forward
t = 10 ms
-
75
A
current
sinusoidal; T j = 150 ˚C prior to
surge; with reapplied V RWM(max)
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
150
˚C
temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R th j-mb
Thermal resistance junction to
-
-
2.0
K/W
mounting base
R th j-a
Thermal resistance junction to in free air
-
60
-
K/W
ambient
October 1997
1
Rev 1.000
Damper diode
BY329-1500
s
337904663.011.png 337904663.012.png 337904663.013.png
Philips Semiconductors
Product specification
fast, high-voltage
BY329-1500S
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
1500 1500S 1500 1500S
V F
Forward voltage
I F = 6.5 A
1.1
1.3 1.45 1.6
V
I F = 6.5 A; T j = 125 ˚C
1.05
1.2 1.35 1.5
V
I R
Reverse current
V R = 1300 V
-
250
-
250
m
A
V R = 1300 V; T j = 125 ˚C
-
1
-
1
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
1500 1500S 1500 1500S
t rr
Reverse recovery time
I F = 1 A; V R
³
30 V;
0.18 0.13
0.23
0.16
m
s
dI F /dt = 50A/
m
s
Q s
Reverse recovery charge
I F = 2 A; -dI F /dt = 20 A/
m
s
1.6
0.7
2.0
0.95
m
C
V fr
Peak forward recovery voltage I F = 6.5A; dI F /dt = 50A/
m
s
17
23
30
40
V
t fr
Forward recovery time
I F = 6.5A; dI F /dt = 50A/
m
s
210
220
300
320
ns
I F
I F
dI
F
dt
trr
10%
tfr
time
time
V F
Qs
25%
100%
V fr
5V
I R
V F
time
Fig.1. Definition of Vfr and tfr
Fig.2. Definition of t rr and Q s
October 1997
2
Rev 1.000
Damper diode
BY329-1500
337904663.014.png 337904663.001.png 337904663.002.png
Philips Semiconductors
Product specification
fast, high-voltage
BY329-1500S
VCC
IF / A
BY32915S
30
Tj = 125 C
Tj = 25 C
Line output transformer
20
LY
10
typ
deflection transistor
D1
Cf
Cs
max
0
0
0.5
1
1.5
VF / V
2
Fig.3. Basic horizontal deflection circuit.
Fig.6. BY329-1500S Typical and maximum forward
characteristic I F = f(V F ); parameter T j
100
Maximum pulse width / us
BY459X-1500
10
Zth j-mb / (K/W)
VRRM
V
pulse
time
1
width tp
period T
10
0.1
t p
P
D
t
1
10
100
0.01
10us
100us
1ms
10ms
0.1s
1s
10s
line frequency / kHz
tp / s
Fig.4. Maximum allowable pulse width t p versus line
frequency; Basic horizontal deflection circuit.
Fig.7. Transient thermal impedance Z th = f(t p )
30
IF / A
BY32915
Tj = 125 C
Tj = 25 C
20
10
typ
max
0
0
0.5
1
1.5
2
VF / V
Fig.5. BY329-1500 Typical and maximum forward
characteristic I F = f(V F ); parameter T j
October 1997
3
Rev 1.000
Damper diode
BY329-1500
337904663.003.png 337904663.004.png 337904663.005.png
Philips Semiconductors
Product specification
fast, high-voltage
BY329-1500S
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
3,0 max
not tinned
15,8
max
3,0
13,5
min
1,3
max
(2x )
12
0,9 max (2x)
0,6
5,08
2,4
Fig.8. TO220AC; pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
4
Rev 1.000
Damper diode
BY329-1500
337904663.006.png 337904663.007.png 337904663.008.png
Philips Semiconductors
Product specification
fast, high-voltage
BY329-1500S
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Ó
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
5
Rev 1.000
Damper diode
BY329-1500
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
337904663.009.png 337904663.010.png
Zgłoś jeśli naruszono regulamin