BY278.PDF

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D118

BY278

Damper diode

Product specication

File under Discrete Semiconductors, SC01

1996 Sep 26

Philips Semiconductors

Product specication

Damper diode

BY278

FEATURES

DESCRIPTION

This package is hermetically sealed

and fatigue free as coefficients of

expansion of all used parts are

matched.

Glass passivated

Rugged glass package, using a high

temperature alloyed construction.

High maximum operating

temperature

Low leakage current

Excellent stability

Available in ammo-pack

Also available with preformed leads

for easy insertion.

2/3 pa ge (Datas heet)

MAM104

APPLICATIONS

Damper diode in high frequency

horizontal deflection circuits up to

16 kHz.

Fig.1 Simplified outline (SOD64) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V RSM

non-repetitive peak reverse voltage

1700 V

V RRM

repetitive peak reverse voltage

1700 V

V R

continuous reverse voltage

1650 V

I FWM

working peak forward current

T amb =75 ° C; PCB mounting (see

Fig.4); see Fig.2

I FRM

repetitive peak forward current

10 A

I FSM

non-repetitive peak forward current

t = 10 ms half sinewave;

T j =T j max prior to surge;

V R =V RRMmax

50 A

T stg

storage temperature

+175

T j

junction temperature

+150

ELECTRICAL CHARACTERISTICS

T j =25

C; unless otherwise specied.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

V F

forward voltage

I F = 5 A; T j =T j max ; see Fig.3

1.4 V

I F = 5 A; see Fig.3

1.5 V

I R

reverse current

V R =V Rmax ; T j = 150

150

t rr

reverse recovery time

when switched from I F = 0.5 A to I R =1A;

measured at I R = 0.25 A; see Fig.6

m s

t fr

forward recovery time

when switched to I F = 5 A in 50 ns;

T j =T j max ; Fig.7

1996 Sep 26

Philips Semiconductors

Product specication

Damper diode

BY278

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

K/W

R th j-a

thermal resistance from junction to ambient

note 1

K/W

mounted as shown in Fig.5

K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

m, see Fig.4.

For more information please refer to the “General Part of Handbook SC01”.

1996 Sep 26

Philips Semiconductors

Product specication

Damper diode

BY278

GRAPHICAL DATA

MBH407

MBH408

1.25

handbook, halfpage

P tot

(W)

I F

(A)

1.00

0.75

0.50

0.25

V F (V)

I FWM (A)

Solid line: basic high-voltage E/W modulator circuit; see Fig.8.

Dotted line: basic conventional horizontal deflection circuit; see Fig.9.

Curves include power dissipation due to switching losses.

Dotted line: T j = 150 ° C.

Solid line: T j =25

Fig.2 Maximum total power dissipation as a

function of working peak forward current.

Fig.3 Forward current as a function of forward

voltage; maximum values.

handbook, halfpage

3 cm 2

copper

3 cm 2

copper

MGA200

MGA204

25.4

Dimensions in mm.

Fig.4 Device mounted on a printed-circuit board.

Fig.5 Mounting with additional printed-circuit

board for heat sink purposes.

1996 Sep 26

Philips Semiconductors

Product specication

Damper diode

BY278

handbook, full pagewidth

DUT

I F

(A)

0.5

t rr

25 V

0.25

0.5

I R

(A)

1.0

MAM057

Input impedance oscilloscope: 1 M

, 22 pF; t r £

7 ns.

Source impedance: 50 W ; t r £ 15 ns.

Fig.6 Test circuit and reverse recovery time waveform and definition.

MGD600

handbook, halfpage

V F

90%

100%

t fr

I F

10%

Fig.7 Forward recovery time definition.

1996 Sep 26

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