BY229.PDF

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Philips Semiconductors
Product specification
fast, soft-recovery
BY229 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass-passivated double diffused
SYMBOL PARAMETER
MAX. MAX. MAX. MAX. UNIT
rectifier diodes in a plastic envelope
featuring low forward voltage drop,
BY229 -200 -400 -600 -800
fast reverse recovery and soft
V RRM
Repetitive peak reverse 200 400 600 800
V
recovery characteristic. The devices
voltage
are intended for use in TV receivers,
I F(AV)
Average forward current
8
8
8
8
A
monitors and switched mode power
I FSM
Non-repetitive peak
60
60
60
60
A
supplies.
forward current
t rr
Reverse recovery time
135 135 135 135
ns
PINNING - TO220AC
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
1
cathode (k)
2
anode (a)
a
k
tab cathode (k)
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-200 -400 -600 -800
V RSM
Non-repetitive peak reverse
-
200
400
600
800
V
voltage
V RRM
Repetitive peak reverse voltage
-
200
400
600
800
V
V RWM
Crest working reverse voltage
-
150
300
500
600
V
V R
Continuous reverse voltage
-
150
300
500
600
V
I F(AV)
Average forward current 1
square wave;
-
8
A
= 0.5;
T mb
122 ˚C
sinusoidal;
£
-
7
A
a = 1.57;
T mb
I F(RMS)
RMS forward current
£
125 ˚C
-
11
A
I FRM
Repetitive peak forward current t = 25
m
s;
d
= 0.5;
-
16
A
T mb
£
122 ˚C
I FSM
Non-repetitive peak forward
t = 10 ms
-
60
A
current.
t = 8.3 ms
-
66
A
sinusoidal;
T j = 150 ˚C prior to
surge; with
reapplied V RWM(max)
I 2 t
I 2 t for fusing
t = 10 ms
-
18
A 2 s
T stg
Storage temperature
-40
150
˚C
T j
Operating junction temperature
-
150
˚C
1 Neglecting switching and reverse current losses.
October 1994
1
Rev 1.100
Rectifier diodes
d
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Philips Semiconductors
Product specification
fast, soft-recovery
BY229 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance junction to
-
-
2.0
K/W
mounting base
R th j-a
Thermal resistance junction to in free air.
-
60
-
K/W
ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V F
Forward voltage
I F = 20 A
-
1.5
1.85
V
I R
Reverse current
V R = V RWM ; T j = 125 ˚C
-
0.1
0.4
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
t rr
Reverse recovery time
I F = 1 A; V R > 30 V; -dI F /dt = 50 A/
m
s
-
100
135
ns
Q s
Reverse recovery charge
I F = 2 A; V R > 30 V; -dI F /dt = 20 A/
m
s
-
0.5
0.7
m
C
dI R /dt
Maximum slope of the reverse I F = 2 A; -dI F /dt = 20 A/
m
s
-
50
60
A/
m
s
recovery current
October 1994
2
Rev 1.100
Rectifier diodes
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Philips Semiconductors
Product specification
fast, soft-recovery
BY229 series
dI
IFS(RMS) / A
BY229
I F
F
80
dt
70
IFSM
60
trr
50
time
40
30
Qs
25%
100%
20
I
R
10
I
rrm
0
1ms
10ms
0.1s
1s
10s
tp / s
Fig.1. Definition of t rr , Q s and I rrm
Fig.4. Maximum non-repetitive rms forward current.
I F = f(t p ); sinusoidal current waveform; T j = 150˚C prior
to surge with reapplied V RWM .
PF / W
BY329
Tmb(max) / C
30
IF / A
BY229F
20
110
Vo = 1.25 V
Rs = 0.03 Ohms
D = 1.0
Tj = 150 C
Tj = 25 C
15
0.5
120
20
10
0.2
130
0.1
I
t p
D =
t p
10
T
140
5
typ
max
T
t
0
150
0
0
2
4
6
8
10
12
0
0.5
1
1.5
2
IF(AV) / A
VF / V
Fig.2. Maximum forward dissipation, P F = f(I F(AV) );
square wave current waveform; parameter D = duty
cycle = t p /T.
Fig.5. Typical and maximum forward characteristic;
I F = f(V F ); parameter T j
15
PF / W
BY329
Tmb(max) / C
10
Qs / uC
BY329
120
Tj = 150 C
Tj = 25 C
Vo = 1.25 V
Rs = 0.03 Ohms
a = 1.57
IF = 10 A
1.9
10
2.2
130
10 A
2 A
2.8
1 A
4
1
2 A
5
140
1 A
0
150
0.1
10
0
2
4
6
8
1
100
IF(AV) / A
-dIF/dt (A/us)
Fig.3. Maximum forward dissipation, P F = f(I F(AV) );
sinusoidal current waveform; parameter a = form
factor = I F(RMS) /I F(AV) .
Fig.6. Maximum Q s at T j = 25˚C and 150˚C
October 1994
3
Rev 1.100
Rectifier diodes
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Philips Semiconductors
Product specification
fast, soft-recovery
BY229 series
trr / ns
BY329
Zth j-mb / (K/W)
1000
10
IF = 10 A
10A
1 A
1
1A
100
0.1
P
t p
D
Tj = 150 C
Tj = 25 C
t
10
0.01
10us
1
10
100
100us
1ms
10ms
0.1s
1s
10s
-dIF/dt (A/us)
tp / s
Fig.7. Maximum t rr measured to 25% of I rrm ; T j = 25˚C
and 150˚C
Fig.9. Transient thermal impedance Z th = f(t p )
100
Cd / pF
BY329
10
1
10
1000
1
VR / V
100
Fig.8. Typical junction capacitance C d at f = 1 MHz ;
T j = 25˚C
October 1994
4
Rev 1.100
Rectifier diodes
337904658.020.png 337904658.021.png 337904658.022.png
Philips Semiconductors
Product specification
fast, soft-recovery
BY229 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
3,0 max
not tinned
15,8
max
3,0
13,5
min
1,3
max
(2x )
1
2
0,9 max (2x)
0,6
5,08
2,4
Fig.10. TO220AC; pin 1 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1994
5
Rev 1.100
Rectifier diodes
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