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Dual high-speed switching diode
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV73
Dual high-speed switching diode
in common cathode configuration
Preliminary specification
1997 May 06
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Philips Semiconductors
Preliminary specification
Dual high-speed switching diode
in common cathode configuration
BAV73
FEATURES
PINNING SOT23
·
Plastic SMD package
PIN
DESCRIPTION
·
High switching speed
1
anode 1
·
Common cathode configuration.
2
anode 2
3
common cathode
APPLICATIONS
·
General.
handbook, 4 columns
2
1
DESCRIPTION
Dual diode in a common cathode
configuration in a small rectangular
SMD SOT23 package.
2
1
3
3
Top view
MAM108
Marking code: JBp.
Fig.1 Simplified outline and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
Per diode
V RRM
repetitive peak reverse voltage
-
250
V
V R
continuous reverse voltage
-
200
V
I F(AV)
average forward current
average over any 20 ms period; t p £
0.5 ms
-
200
mA
I F
continuous forward current
-
200
mA
I FRM
repetitive peak forward current
-
625
mA
I FSM
non-repetitive peak forward
current
t=1 m s
-
9
A
t = 100
m
s
-
3
A
t = 10 ms
-
1.7
A
P tot
total power dissipation
T amb =25
°
C; note 1
-
250
mW
T stg
storage temperature
- 65
+150
° C
T j
junction temperature
-
150
°
C
Note
1. Device mounted on an FR4 printed-circuit board.
1997 May 06
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Philips Semiconductors
Preliminary specification
Dual high-speed switching diode
in common cathode configuration
BAV73
ELECTRICAL CHARACTERISTICS
T j =25 ° C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V F
forward voltage
I F = 100 mA
-
1
V
I F = 200 mA
-
1.25
V
V (BR)R
reverse breakdown voltage
I R = 100
m
A
250
-
V
I R
reverse current
V R = 250 V
-
100
nA
V R = 250 V; T j = 150
°
C
-
100
m
A
C d
diode capacitance
V R = 0; f = 1 MHz
-
5
pF
t rr
reverse recovery time
switching from I F = 30 mA to I R = 30 mA;
R L = 100 W ; measured at I R =3mA
-
50
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R th j-s
thermal resistance from junction to soldering point
360
K/W
1997 May 06
3
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Philips Semiconductors
Preliminary specification
Dual high-speed switching diode
in common cathode configuration
BAV73
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max.
b p
c
D
E
e
e 1
H E
L p
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT23
97-02-28
1997 May 06
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Philips Semiconductors
Preliminary specification
Dual high-speed switching diode
in common cathode configuration
BAV73
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 06
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