BAV70_4.pdf

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High-speed double diode
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV70
High-speed double diode
Product specification
Supersedes data of 1997 Nov 24
1999 May 05
Philips Semiconductors
Product specification
High-speed double diode
BAV70
FEATURES
DESCRIPTION
PINNING
·
Small plastic SMD package
The BAV70 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
PIN
DESCRIPTION
·
High switching speed: max. 4 ns
1
anode (a1)
·
Continuous reverse voltage:
max. 70 V
2
anode (a2)
3
common cathode
·
Repetitive peak reverse voltage:
max. 75 V
·
Repetitive peak forward current:
max. 450 mA.
handbook, halfpage
3
3
APPLICATIONS
·
High-speed switching in thick and
thin-film circuits.
1
2
1
2
Top view
MAM383
Marking code: A4p = made in Hong Kong. A4t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V RRM
repetitive peak reverse voltage
-
85
V
V R
continuous reverse voltage
-
75
V
I F
continuous forward current
single diode loaded; note 1;
see Fig.2
-
215
mA
double diode loaded; note 1;
see Fig.2
-
125
mA
I FRM
repetitive peak forward current
-
450
mA
I FSM
non-repetitive peak forward current square wave; T j =25
°
C prior to
surge; see Fig.4
t=1
m
s
-
4
A
t=1ms
-
1
A
t=1s
-
0.5
A
P tot
total power dissipation
T amb =25
°
C; note 1
-
250
mW
T stg
storage temperature
-
65
+150
C
T j
junction temperature
-
150
° C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 05
2
°
Philips Semiconductors
Product specification
High-speed double diode
BAV70
ELECTRICAL CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V F
forward voltage
see Fig.3
I F = 1 mA
715
mV
I F = 10 mA
855
mV
I F =50mA
1
V
I F = 150 mA
1.25
V
I R
reverse current
see Fig.5
V R =25V
30
nA
V R =75V
2.5
m A
V R =25V; T j = 150
°
C
60
m
A
V R =75V; T j = 150
°
C
100
m
A
C d
diode capacitance
f = 1 MHz; V R = 0; see Fig.6
1.5
pF
t rr
reverse recovery time
when switched from I F = 10 mA to
I R = 10 mA; R L = 100 W ;
measured at I R = 1 mA; see Fig.7
4
ns
V fr
forward recovery voltage
when switched from I F = 10 mA;
t r = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point
360
K/W
R th j-a
thermal resistance from junction to ambient
note 1
500
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 05
3
Philips Semiconductors
Product specification
High-speed double diode
BAV70
GRAPHICAL DATA
300
MBD033
300
MBG382
handbook, halfpage
I F
(mA)
I F
(mA)
(1)
(2)
(3)
200
200
single diode loaded
100
double diode loaded
100
0
0
0
100
T ( C)
o
200
0
1
V F (V)
2
amb
Device mounted on an FR4 printed-circuit board.
C; typical values.
(2) T j =25 ° C; typical values.
(3) T j =25
°
°
C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
10 2
MBG704
handbook, full pagewidth
I FSM
(A)
10
1
10 - 1
1
10
10 2
10 3
t p ( m s)
10 4
Based on square wave currents.
T j =25 ° C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 05
4
(1) T j = 150
Philips Semiconductors
Product specification
High-speed double diode
BAV70
10 2
MGA885
MBG446
0.8
handbook, halfpage
I R
( A)
C d
(pF)
V = 75 V
R
10
0.6
max
1
75 V
0.4
10
1
25 V
0.2
typ
2
typ
10
0
0
100
o
200
0
4
8
12
16
T ( C)
j
V R (V)
f = 1 MHz; T j =25 ° C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 May 05
5
m

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