BAT720.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
BAT720
Schottky barrier diode
Product specification
File under Discrete Semiconductors, SC01
1998 Jan 21
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Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
FEATURES
DESCRIPTION
·
Ultra high switching speed
Planar Schottky barrier diode with an integrated guard ring for stress protection
in a SOT23 small plastic SMD package.
·
Low forward voltage
·
Guard ring protected
·
Small SMD package.
APPLICATIONS
handbook, halfpage
3
3
·
Ultra high-speed switching
2
n.c.
1
·
Voltage clamping
·
Protection circuits.
1
2
Top view
MAM394
PINNING
PIN
DESCRIPTION
1
anode
Marking code: L6p.
2
not connected
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
3
cathode
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V R
continuous reverse voltage
-
40
V
I F
continuous forward current
-
500
mA
I FSM
non-repetitive peak forward current
t p < 10 ms
-
2
A
T stg
storage temperature
-
65
+150
° C
T j
junction temperature
-
125
° C
1998 Jan 21
2
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Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
ELECTRICAL CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V F
forward voltage
I F = 500 mA; see Fig.2
-
550
mV
I R
reverse current
V R = 35 V; see Fig.3
-
100
m
A
V R =35V;T j = 100
°
C; see Fig.3
-
10
mA
C d
diode capacitance
f = 1 MHz; V R = 0; see Fig.4
60
90
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
500
K/W
Note
1. Refer to SOT23 standard mounting conditions.
1998 Jan 21
3
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Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
GRAPHICAL DATA
10 3
MBK578
10
MBK579
handbook, halfpage
handbook, halfpage
I F
(mA)
I R
(mA)
(1)
10 2
(1)
1
(2)
(2)
10
10 - 1
(3)
1
10 - 2
(3)
10 - 1
10 - 3
150
250
350
450
550
0
10
20
30
40
V R (V)
V F (mV)
C.
(2) T amb =85 ° C.
(3) T amb =25 ° C.
°
C.
(2) T amb =85 ° C.
(3) T amb =25 ° C.
°
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
10 2
MBK577
handbook, halfpage
C d
(pF)
10
1
0
10
20
30
40
V R (V)
f = 1 MHz; T j =25
°
C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1998 Jan 21
4
(1) T amb = 125
(1) T amb = 125
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Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max.
b p
c
D
E
e
e 1
H E
L p
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT23
97-02-28
1998 Jan 21
5
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