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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D088
BAT54W series
Schottky barrier (double) diodes
Product specication
Supersedes data of October 1993
File under Discrete Semiconductors, SC01
1996 Mar 19
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Philips Semiconductors
Product specication
Schottky barrier (double) diodes
BAT54W series
FEATURES
PINNING
·
Low forward voltage
BAT54
PIN
·
Guard ring protected
W
AW
CW
SW
3
handbook, halfpage
·
Very small SMD package.
1
a
k 1
a 1
a 1
1
2
2
n.c.
k 2
a 2
k 2
APPLICATIONS
3
k a 1 , a 2 k 1 , k 2 k 1 , a 2
MLC360
·
Ultra high-speed switching
·
Voltage clamping
Fig.3 BAT54AW diode
configuration (symbol).
·
Protection circuits
handbook, 2 columns
3
·
Blocking diodes.
DESCRIPTION
3
handbook, halfpage
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
1
2
1
2
Top view
MBC870
MLC359
Fig.1 Simplified outline
(SOT323) and pin
configuration.
MARKING
Fig.4 BAT54CW diode
configuration (symbol).
TYPE NUMBER
MARKING
CODE
BAT54W
L4
3
3
handbook, halfpage
handbook, halfpage
BAT54AW
42
BAT54CW
43
1
2
n.c.
MLC357
1
2
BAT54SW
44
MLC358
Fig.2 BAT54W single diode
configuration (symbol).
Fig.5 BAT54SW diode
configuration (symbol).
1996 Mar 19
2
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Philips Semiconductors
Product specication
Schottky barrier (double) diodes
BAT54W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
Per diode
V R
continuous reverse voltage
-
30
V
I F
continuous forward current
-
200
mA
I FRM
repetitive peak forward current
t p £
1 s;
d £
0.5
-
300
mA
I FSM
non-repetitive peak forward current
t p <
10 ms
-
600
mA
P tot
total power dissipation (per package) T amb £
25
°
C
-
200
mW
T stg
storage temperature
- 65
+150
°
C
T j
junction temperature
-
125
°
C
T amb
operating ambient temperature
- 65
+125
°
C
ELECTRICAL CHARACTERISTICS
T amb = 25
°
C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V F
forward voltage
see Fig.6
I F = 0.1 mA
240
mV
I F = 1 mA
320
mV
I F = 10 mA
400
mV
I F = 30 mA
500
mV
I F = 100 mA
800
mV
I R
reverse current
V R = 25 V; note 1; see Fig.7
2
m A
t rr
reverse recovery time
when switched from I F = 10 mA to
I R = 10 mA; R L = 100
5
ns
W
; measured at
I R = 1 mA: see Fig.9
C d
diode capacitance
f = 1 MHz; V R = 1 V; see Fig.8
10
pF
Note
1. Pulsed test: t p = 300
m
s;
d
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
625
K/W
Note
1. Refer to SOT323 standard mounting conditions.
1996 Mar 19
3
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Philips Semiconductors
Product specication
Schottky barrier (double) diodes
BAT54W series
GRAPHICAL DATA
MSA892
MSA893
10 3
I R
handbook, halfpage
10
3
I F
(1)
(2)
(3)
(1)
m
A)
(mA)
10
2
10 2
(2)
10
10
1
(1)
(2)
(3)
1
(3)
10 1
10 1
0
0.4
0.8
1.2
0
10
20
30
V (V)
R
V F (V)
(1) T amb = 125 ° C.
(2) T amb = 85
°
C.
(1) T amb = 125 ° C.
(2) T amb = 85
°
(3) T amb = 25
°
C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
15
MSA891
C d
(pF)
handbook, halfpage
10
dI
dt
F
t rr
5
10%
t
Q
r
dI
dt
R
90%
0
0
10
20
30
I R
t f
MRC129
V (V)
R
f = 1 MHz; T amb = 25 ° C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Reverse recovery definitions.
1996 Mar 19
4
(
C.
(3) T amb = 25 ° C.
I F
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Philips Semiconductors
Product specication
Schottky barrier (double) diodes
BAT54W series
PACKAGE OUTLINE
handbook, full pagewidth
1.00
max
0.2
M
A
0.2
M
B
0.4
0.2
0.1
max
0.2
3
A
2.2
2.0
1.35
1.15
1
2
0.3
0.1
1.4
1.2
2.2
1.8
0.25
0.10
B
MBC871
Dimensions in mm.
Fig.10 SOT323.
DEFINITIONS
Data sheet status
Objective specication
This data sheet contains target or goal specications for product development.
Preliminary specication
This data sheet contains preliminary data; supplementary data may be published later.
Product specication
This data sheet contains nal product specications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specication
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specication.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 19
5
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