BAT120.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D087
BAT120 series
Schottky barrier double diodes
Product specification
File under Discrete Semiconductors, SC01
1998 Jan 21
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Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
FEATURES
PINNING
·
Low switching losses
BAT120
PIN
·
Capability of absorbing very high
surge current
A
C
S
4
page
1
k 1
a 1
a 1
·
Fast recovery time
1
3
2
n.c.
n.c.
n.c.
·
Guard ring protected
3
k 2
a 2
k 2
·
Plastic SMD package.
2 n.c.
MGL171
4
a 1 , a 2
k 1 , k 2
k 1 , a 2
APPLICATIONS
Fig.2 BAT120A diode
configuration (symbol).
·
Low power switched-mode power
supplies
·
Rectification
age
4
4
·
Polarity protection.
page
DESCRIPTION
1
3
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package
2 n.c.
MGL172
Fig.3 BAT120C diode
configuration (symbol).
1
2
3
MARKING
Top view
MSB002 - 1
TYPE NUMBER
MARKING
CODE
4
page
BAT120A
AT120A
Fig.1 Simplified outline
(SOT223) and pin
configuration.
BAT120C
AT120C
1
3
BAT120S
AT120S
2 n.c.
MGL173
Fig.4 BAT120S diode
configuration (symbol).
1998 Jan 21
2
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Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
Per diode
V R
continuous reverse voltage
-
25
V
I F
continuous forward current
-
1
A
I FSM
non-repetitive peak forward current
10 ms; half sinewave;
JEDEC method
-
10
A
I RSM
non-repetitive peak reverse current
t p = 100 ms
-
0.5
A
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
125
°
C
T amb
operating ambient temperature
-
65
+125
° C
ELECTRICAL CHARACTERISTICS
T amb =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX. UNIT
Per diode
V F
forward voltage
see Fig.5
I F = 100 mA
260
300
mV
I F =1A
400
450
mV
I R
reverse current
V R = 20 V; note 1; see Fig.6
80
500
mA
V R = 25 V; note 1; see Fig.6
-
1000
mA
V R = 20 V; T j = 100
C; note 1
-
10
mA
C d
diode capacitance
f = 1 MHz; V R = 4 V; see Fig.7 100
-
pF
Note
1. Pulsed test: t p = 300 m s; d = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
100
K/W
Note
1. Refer to SOT223 standard mounting conditions.
1998 Jan 21
3
t p <
°
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Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
GRAPHICAL DATA
10 4
MBK572
10 4
MBK573
handbook, halfpage
handbook, halfpage
I F
(mA)
I R
(mA)
(1)
10 3
10 3
(2)
(3)
10 2
(1)
(2)
(3)
(4)
10 2
(4)
10
10
1
1
0
0.2
0.4
0.6
0.8
1.0
0
10
20
V R (V)
30
V F (V)
(1) T amb = 125 ° C.
(2) T amb = 100
°
C.
(3) T amb =75 ° C.
(4) T amb =25
C.
(1) T amb = 125 ° C.
(2) T amb = 100
°
C.
(3) T amb =75 ° C.
(4) T amb =25
C.
Fig.5 Forward current as a function of forward
voltage; typical values.
Fig.6 Reverse current as a function of reverse
voltage; typical values.
10 3
MBK571
handbook, halfpage
C d
(pF)
10 2
10
0
10
20
30
V R (V)
f = 1 MHz; T amb =25
°
C.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
1998 Jan 21
4
°
°
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Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H E
v M A
b 1
4
Q
A
A 1
1
2
3
L p
e 1
b p
w M
B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
b p
b 1
c
DE
e
e 1
E L p
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT223
96-11-11
97-02-28
1998 Jan 21
5
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