BAS85_4.pdf
(
51 KB
)
Pobierz
Schottky barrier diode
DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D121
BAS85
Schottky barrier diode
Product specification
Supersedes data of 1996 Oct 01
2000 May 25
Philips Semiconductors
Product specification
Schottky barrier diode
BAS85
FEATURES
DESCRIPTION
encapsulated in a hermetically sealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
immersion soldering.
·
Low forward voltage
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
·
High breakdown voltage
·
Guard ring protected
·
Hermetically-sealed small SMD
package.
APPLICATIONS
handbook, halfpage
k
a
·
Ultra high-speed switching
·
Voltage clamping
·
Protection circuits
MAM190
·
Blocking diodes.
Cathode indicated by a grey band.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
200
mA
I
F(AV)
average forward current
V
RWM
= 25 V; a = 1.57;
d
= 0.5;
-
200
mA
note 1; Fig.2
I
FRM
repetitive peak forward current
t
p
£
1s;
d£
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t
p
=10ms
-
5
A
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
125
°
C
T
amb
operating ambient temperature
-
65
+125
°
C
Note
1. Refer to SOD80 standard mounting conditions.
2000 May 25
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAS85
ELECTRICAL CHARACTERISTICS
T
amb
=25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 0.1 mA
240
mV
I
F
= 1 mA
320
mV
I
F
= 10 mA
400
mV
I
F
= 30 mA
500
mV
I
F
= 100 mA
800
mV
I
R
reverse current
V
R
= 25 V; note 1; see Fig.4
2.3
m
A
C
d
diode capacitance
f = 1 MHz; V
R
= 1 V; see Fig.5
10
pF
Note
1. Pulsed test: t
p
= 300
m
s;
d
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
320
K/W
Note
1. Refer to SOD80 standard mounting conditions.
2000 May 25
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAS85
GRAPHICAL DATA
MRA540
10
3
MLD358
250
handbook, halfpage
handbook, halfpage
I
F(AV)
(mA)
I
F
(mA)
(1) (2) (3)
200
10
2
150
10
100
1
(1)
(2) (3)
50
0
10
-
1
0
50
100
150
0
0.4
0.8
1.2
V
F
(V)
o
T ( C)
amb
C.
(2) T
amb
=85
°
C.
(3) T
amb
=25
°
°
C.
Fig.2 Derating curve.
Fig.3 Forward current as a function of forward
voltage; typical values.
MGC682
MGC681
10
5
handbook, halfpage
handbook, halfpage
I
R
(1)
C
d
(nA)
10
4
(pF)
10
3
8
(2)
10
2
10
4
1
(3)
10
-
1
0
0
10
20
30
0
10
20
30
V
R
(V)
V
R
(V)
C.
(3) T
amb
=
-
40
°
C.
°
f = 1 MHz.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
2000 May 25
4
(1) T
amb
= 125
12
(1) T
amb
=85
°
C.
(2) T
amb
=25
Philips Semiconductors
Product specification
Schottky barrier diode
BAS85
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package; 2 connectors
SOD80C
k
(1)
a
D
L
L
H
DIMENSIONS (mm are the original dimensions)
0
1
2 mm
UNIT
D
H
L
scale
mm
1.60
1.45
3.7
3.3
0.3
Note
1. The marking band indicates the cathode.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD80C
100H01
97-06-20
2000 May 25
5
Plik z chomika:
ProALX
Inne pliki z tego folderu:
bav70.pdf
(86 KB)
bzv55xx.pdf
(63 KB)
1N4001G.PDF
(50 KB)
BA157.pdf
(24 KB)
BA282.PDF
(42 KB)
Inne foldery tego chomika:
▶ Proste układy elektroniczne dla początkujących
▶ Prostowniki i zasilacze
• ATLAS UZWOJEŃ silników indukcyjnych
• Schematy monitorów LCD
• Schematy spawarek
Zgłoś jeśli
naruszono regulamin