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Controlled avalanche rectifiers
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BAS11; BAS12
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1996
1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
FEATURES
DESCRIPTION
These packages are hermetically
sealed and fatigue free as coefficients
of expansion of all used parts are
matched.
·
Glass passivated
Rectifier diodes in cavity free
cylindrical SOD91 glass packages,
incorporating Implotec
·
High maximum operating
temperature
ä
(1)
technology.
·
Low leakage current
·
Excellent stability
(1) Implotec is a trademark of Philips.
·
Available in ammo-pack.
k
a
MAM196
Marking code BAS11:
S11.
Marking code BAS12:
S12.
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BAS11
-
300 V
BAS12
-
400 V
V
RWM
working reverse voltage
BAS11
-
300 V
BAS12
-
400 V
V
R
continuous reverse voltage
BAS11
-
300 V
BAS12
-
400 V
I
F(AV)
average forward current
averaged over any 20 ms period;
T
tp
=75
-
350 mA
C; lead length = 10 mm;
see Figs 2 and 4
°
averaged over any 20 ms period;
T
amb
=30
-
300 mA
C; PCB mounting
(see Fig.8); see Figs 3 and 4
°
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
=T
j max
prior to surge;
V
R
=V
RRMmax
-
4A
RRM
repetitive peak reverse power
dissipation
t=10
m
s square wave; f = 50 Hz;
T
amb
=25
-
75 W
C
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
65
+150
°
C
1996 Sep 26
2
Not recommended for new designs
°
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
ELECTRICAL CHARACTERISTICS
T
j
=25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 300 mA; T
j
=T
jmax
; see Fig.5
-
-
1.0 V
I
F
= 300 mA; see Fig.5
-
-
1.1 V
V
(BR)R
reverse avalanche
breakdown voltage
I
R
= 0.1 mA
BAS11
330
-
-
V
BAS12
440
-
-
V
I
R
reverse current
V
R
=V
RRMmax
; see Fig.6
-
-
250
nA
V
R
=V
RRMmax
; T
j
= 125
°
C; see Fig.6
-
-
10
m
A
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.9
-
-
1
m
s
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.7
-
20
-
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
180
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
340
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
³
40
m
m, see Fig.8.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
GRAPHICAL DATA
MGD293
MGD295
0.6
0.4
handbook, halfpage
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
(A)
0.3
0.4
0.2
0.2
0.1
0
0
0
40
80
120
160
T
tp
(
o
C)
200
0
40
80
120
160
T
amb
(
200
°
C)
Lead length 10 mm.
a = 1.57; V
R
=V
RRMmax
;
d
= 0.5.
Device mounted as shown in Fig.8.
a = 1.57; V
R
=V
RRMmax
;
d
= 0.5.
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
MGD292
MGD294
handbook, halfpage
handbook, halfpage
P
(W)
I
F
(A)
a = 3
2.5
2
1.57
0.4
4
1.42
0.3
3
0.2
2
0.1
1
0
0
0
0.1
0.2
0.3
0.4
0
1
2
3
V
F
(V)
I
F(AV)
(A)
a=I
F(RMS)
/I
F(AV)
; V
R
=V
RRMmax
;
d
= 0.5.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Solid line: T
j
=25
°
C.
Dotted line: T
j
= 150
°
C.
Fig.5 Forward current as a function of forward
voltage; maximum values.
1996 Sep 26
4
Not recommended for new designs
0.5
5
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
MGD297
MGD296 - 1
10
2
10
handbook, halfpage
handbook, halfpage
I
R
C
d
(pF)
m
A)
10
1
10
-
1
1
0
50
100
150
200
10
-
1
1
10
10
2
10
3
T
j
(
o
C)
V
R
(V)
V
R
=V
RRMmax
.
f = 1 MHz; T
j
=25
°
C.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
50
25
7
50
2
3
MGA200
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1996 Sep 26
5
Not recommended for new designs
(
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