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TELEFUNKEN Semiconductors
BA479G.BA479S
Silicon PIN Diodes
Features
Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable
attenuators
94 9367
Absolute Maximum Ratings
T j = 25
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
V R
30
V
Forward current
I F
50
mA
Junction temperature
T j
125
C
Storage temperature range
T stg
–55...+125
C
Maximum Thermal Resistance
T j = 25
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=4mm, T L =constant
R thJA
350
K/W
Characteristics
T j = 25
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I F =20mA
V F
1
V
Reverse current
V R =30 V
I R
50
nA
Diode capacitance
f=100MHz, V R =0
C D
0.5
pF
Differential forward
resistance
f=100MHz, I F =1.5mA
r f
50
Reverse impedance
f=100MHz, V R =0
BA479G
z r
5
k
, R
BA479S
z r
9
k
Minority carrier lifetime I F =10mA, I R =10mA
4
s
Rev. A1: 12.12.1994
1
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BA479G.BA479S
TELEFUNKEN Semiconductors
Typical Characteristics (T j = 25
C unless otherwise specified)
100
10000
10
1000
T amb =25°C
1
100
Scattering Limit
f >20 MHz
T j =25°C
0.1
10
0.01
1
0
0.4
0.8
1.2
1.6
2.0
0.001
0.01
0.1
1
10
95 9735
V F – Forward Voltage ( V )
95 9734
I F – Forward Current ( mA )
Figure 1 : Forward Current vs. Forward Voltage
Figure 2 : Differential Forward Resistance vs. Forward Current
20
0
–Circuit with 10 dB Attenuation
V 0 =40dBmV
f 1 = 100 MHz unmodulated
–20
–40
–60
–80
0
20
40
60
80
95 9733
f 2 , modulated with 200 kHz, m=100% (MHz)
Figure 3 : Typical Cross Modulation Distortion vs. Frequency f 2
Dimensions in mm
Cathode Identification
j
0.55 max.
technical drawings
according to DIN
specifications
94 9366
j 1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
26 min.
3.9 max.
26 min.
2
Rev. A1: 12.12.1994
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TELEFUNKEN Semiconductors
BA479G.BA479S
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements and
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on the
environment.
Of particular concern is the control or elimination of releases into the atmosphere of those substances which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) will soon severely restrict the use of ODSs and forbid
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these
substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous
improvements to eliminate the use of any ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection
Agency ( EPA ) in the USA and
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with and do not contain ozone depleting substances.
We reserve the right to make changes to improve technical design without further notice .
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application,
the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax Number: 49 ( 0 ) 7131 67 2423
Rev. A1: 12.12.1994
3
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