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Philips Semiconductors
Product specification
Rectifier diodes
PBYR2545CTX series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Dual low leakage, platinum barrier,
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
schottky rectifier diodes in a full pack
plastic envelope, featuring low
PBYR25- 35CTX 40CTX 45CTX
forward voltage drop, absence of
V RRM
Repetitive peak reverse
35
40
45
V
stored charge. and guaranteed
voltage
reverse surge capability. The devices
V F
Forward voltage
0.65
0.65
0.65
V
are intended for use in switched mode
I O(AV)
Average output current
20
20
20
A
power supplies and high frequency
(both diodes conducting)
circuits in general where low
conduction and zero switching losses
are important.
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1
anode 1 (a)
a1
a2
2
cathode (k)
1
3
3
anode 2 (a)
case isolated
k
2
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-35
-40
-45
V RRM
Repetitive peak reverse voltage
-
35
40
45
V
V RWM
Crest working reverse voltage
-
60
80
100
V
V R
Continuous reverse voltage
T hs
£
111 ˚C
-
35
40
45
V
I O(AV)
Average output current (both
square wave;
d
= 0.5;
-
20
A
diodes conducting)
T hs
£
103 ˚C
I O(RMS)
RMS output current (both
-
20
A
diodes conducting)
I FRM
Repetitive peak forward current t = 25
m
s;
d
= 0.5;
-
20
A
per diode
T hs
£
103 ˚C
I FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current, per diode
t = 8.3 ms
-
150
A
sinusoidal T j = 125 ˚C prior
to surge; with reapplied
V RRM(max)
I 2 t
I 2 t for fusing
t = 10 ms
-
91
A 2 s
I RRM
Repetitive peak reverse current t p = 2
m
s;
d
= 0.001
-
1
A
per diode.
I RSM
Non-repetitive peak reverse
t p = 100
m
s
-
1
A
current per diode.
T stg
Storage temperature
-65
175
˚C
T j
Operating junction temperature
-
150
˚C
August 1996
1
Rev 1.000
schottky barrier
337904629.007.png 337904629.008.png
Philips Semiconductors
Product specification
Rectifier diodes
PBYR2545CTX series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance junction to per diode
-
-
4.8
K/W
heatsink
both diodes
-
-
4.0
K/W
(with heatsink compound)
R th j-a
Thermal resistance junction to in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V F
Forward voltage (per diode)
I F = 20 A; T j = 125˚C
-
0.58 0.65
V
I F = 20 A
-
0.63 0.68
V
I R
Reverse current (per diode)
V R = V RRM
-
100
200
m
A
V R = V RRM ; T j = 125 ˚C
-
12
40
mA
C d
Junction capacitance (per
f = 1MHz; V R = 5V; T j = 25 ˚C to
-
800
-
pF
diode)
125 ˚C
August 1996
2
Rev 1.000
schottky barrier
337904629.009.png
Philips Semiconductors
Product specification
Rectifier diodes
PBYR2545CTX series
15
PF / W
PBYR1645F
Ths(max) / C
IR / mA
PBYR1645
78
100
Vo = 0.3020 V
Rs = 0.0139 Ohms
D = 1.0
0.5
150 C
10
0.2
10
0.1
102
125 C
1
100 C
5
I
t p
D =
t p
T
126
0.1
75 C
Tj = 50 C
T
t
0.01
0
0
5
10
15
20
25
150
0
25
50
IF(AV) / A
VR/ V
Fig.1. Maximum forward dissipation P F = f(I F(AV) ) per
diode; square current waveform where
I F(AV) =I F(RMS) x
Ö
D.
Fig.4. Typical reverse leakage current per diode;
I R = f(V R ); parameter T j
14
PF / W
PBYR1645F
Ths(max) / C
82.8
Cd / pF
PBYR1645
10000
Vo = 0.302 V
Rs = 0.0139 Ohms
a = 1.57
12
92.4
2.2
1.9
10
102
4
2.8
8
111.6
1000
6
121.2
4
130.8
2
140.4
0
150
100
0
5
10
15
1
10
100
IF(AV) / A
VR / V
Fig.2. Maximum forward dissipation P F = f(I F(AV) ) per
diode; sinusoidal current waveform where a = form
factor = I F(RMS) / I F(AV) .
Fig.5. Typical junction capacitance per diode;
C d = f(V R ); f = 1 MHz; T j = 25˚C to 125 ˚C.
50
IF / A
Tj = 25 C
Tj = 125 C
PBYR1645
Zth j-hs (K/W)
10
typ
max
40
1
30
20
0.1
P
t p
D
10
t
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01
10us
1ms
0.1s
10s
VF / V
tp / s
Fig.3. Typical and maximum forward characteristic
I F = f(V F ); parameter T j
Fig.6. Transient thermal impedance per diode;
Z th j-hs = f(t p ).
August 1996
3
Rev 1.000
schottky barrier
337904629.010.png 337904629.001.png
Philips Semiconductors
Product specification
Rectifier diodes
PBYR2545CTX series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
max.
19
max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
123
0.4
M
1.0 (2x)
0.6
0.9
0.7
2.54
0.5
5.08
2.5
1.3
Fig.7. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1996
4
Rev 1.000
schottky barrier
337904629.002.png 337904629.003.png 337904629.004.png
Philips Semiconductors
Product specification
Rectifier diodes
PBYR2545CTX series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Ó
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
5
Rev 1.000
schottky barrier
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
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