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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BZX55 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 Apr 26
337904630.011.png 337904630.012.png 337904630.013.png
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX55 series
FEATURES
DESCRIPTION
·
Total power dissipation:
max. 500 mW
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
·
Tolerance series:
±
5%
5% tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 to 75 V
(BZX55-C2V4 to BZX55-C75).
±
·
Working voltage range:
nom. 2.4 to 75 V (E24 range)
·
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
handbook, halfpage
k
a
·
Low voltage stabilizers or voltage
references.
MAM239
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I F
continuous forward current
-
250
mA
I ZSM
non-repetitive peak reverse current
t p = 100
m
s; square wave;
see Table
“Per type”
T j = 25
°
C prior to surge
P tot
total power dissipation
T amb = 50
°
C; note 1
-
400
mW
T amb = 50 ° C; note 2
-
500
mW
P ZSM
non-repetitive peak reverse power
dissipation
t p = 100
m
s; square wave;
-
40
W
T j = 25
°
C prior to surge
t p = 8.3 ms; square wave;
T j £
-
30
W
150
°
C prior to surge
T stg
storage temperature
- 65
+200
° C
T j
junction temperature
-
200
°
C
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
£
50
°
C; lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total series
T j = 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V F
forward voltage
I F = 100 mA; see Fig.4
-
1.0
V
1996 Apr 26
2
The diodes are available in the normalized E24
337904630.014.png 337904630.001.png 337904630.002.png 337904630.003.png 337904630.004.png
Per type
T j = 25
°
C; unless otherwise specified.
BZX55-
CXXX
WORKING
VOLTAGE
V Z (V)
at I Ztest
DIFFERENTIAL
RESISTANCE
r dif ( W )
TEMP. COEFF.
S Z (mV/K)
at I Ztest
see Figs 5 and 6
TEST
CURRENT
I Ztest (mA)
DIODE CAP.
C d (pF)
at f = 1 MHz;
at V R = 0 V
REVERSE CURRENT at
REVERSE VOLTAGE
I R ( m A)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I ZSM (A)
at t p = 100
at
I Z
at
I Ztest
at
T j = 25
at
T j = 150
m
s;
V R
(V)
°
C
°
C
T amb = 25
°
C
MIN. MAX. MAX. MAX.
TYP.
MAX.
MAX.
MAX.
MAX.
2V4
2.28
2.56
600
85
-
1.8
5
450
50
100
1.0
6.0
2V7
2.5
2.9
600
85
-
1.9
5
450
10
50
1.0
6.0
3V0
2.8
3.2
600
85
-
2.1
5
450
4
40
1.0
6.0
3V3
3.1
3.5
600
85
-
2.2
5
450
2
40
1.0
6.0
3V6
3.4
3.8
600
85
-
2.4
5
450
2
40
1.0
6.0
3V9
3.7
4.1
600
85
-
2.4
5
450
2
40
1.0
6.0
4V3
4.0
4.6
600
80
-
2.4
5
450
1
20
1.0
6.0
4V7
4.4
5.0
600
70
- 1.4
5
300
0.5
10
1.0
6.0
5V1
4.8
5.4
550
50
- 0.8
5
300
0.1
2
1.0
6.0
5V6
5.2
6.0
450
30
1.6
5
300
0.1
2
1.0
6.0
6V2
5.8
6.6
200
10
2.2
5
200
0.1
2
2.0
6.0
6V8
6.4
7.2
150
8
3.0
5
200
0.1
2
3.0
6.0
7V5
7.0
7.9
50
7
3.8
5
150
0.1
2
5.0
4.0
8V2
7.7
8.7
50
7
4.5
5
150
0.1
2
6.15
4.0
9V1
8.5
9.6
50
10
5.5
5
150
0.1
2
6.8
3.0
10
9.4
10.6
70
15
6.5
5
90
0.1
2
7.5
3.0
11
10.4
11.6
70
20
7.7
5
85
0.1
2
8.25
2.5
12
11.4
12.7
90
20
8.4
5
85
0.1
2
9.0
2.5
13
12.4
14.1
110
26
9.8
5
80
0.1
2
9.75
2.5
15
13.8
15.6
110
30
11.3
5
75
0.1
2
11.25
2.0
16
15.3
17.1
170
40
12.8
5
75
0.1
2
12.0
1.5
18
16.8
19.1
170
50
14.4
5
70
0.1
2
13.5
1.5
20
18.8
21.2
220
55
16.0
5
60
0.1
2
15.0
1.5
337904630.005.png 337904630.006.png
WORKING
VOLTAGE
V Z (V)
at I Ztest
DIFFERENTIAL
RESISTANCE
r dif (
W
)
TEMP. COEFF.
S Z (mV/K)
at I Ztest
see Figs 5 and 6
TEST
CURRENT
I Ztest (mA)
DIODE CAP.
C d (pF)
at f = 1 MHz;
at V R = 0 V
REVERSE CURRENT at
REVERSE VOLTAGE
I R (
m
A)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I ZSM (A)
at t p = 100
BZX55-
CXXX
at
I Z
at
I Ztest
at
T j = 25
at
T j = 150
s;
T amb = 25 ° C
m
V R
(V)
°
C
°
C
MIN. MAX. MAX. MAX.
TYP.
MAX.
MAX.
MAX.
MAX.
22
20.8
23.3
220
55
18.7
5
60
0.1
2
16.5
1.25
24
22.8
25.6
220
80
20.4
5
55
0.1
2
18.0
1.25
27
25.1
28.9
220
80
22.9
5
50
0.1
2
20.25
1.0
30
28.0
32.0
220
80
27.0
5
50
0.1
2
22.25
1.0
33
31.0
35.0
220
80
29.7
5
45
0.1
2
24.75
0.9
36
34.0
38.0
220
80
32.4
5
45
0.1
2
27.0
0.8
39
37.0
41.0
500
90
35.1
2.5
45
0.1
2
29.25
0.7
43
40.0
46.0
600
90
38.7
2.5
40
0.1
2
32.25
0.6
47
44.0
50.0
700
110
44.0
2.5
40
0.1
2
35.25
0.5
51
48.0
54.0
700
125
49.0
2.5
40
0.1
2
38.25
0.4
56
52.0
60.0
1000
135
55.0
2.5
40
0.1
2
42.0
0.3
62
58.0
66.0
1000
150
62.0
2.5
35
0.1
2
46.5
0.3
68
64.0
72.0
1000
200
70.0
2.5
35
0.1
2
51.0
0.25
75
70.0
79.0
1500
250
78.0
2.5
35
0.1
2
56.25
0.2
Note
1. For BZX55-C2V4 up to C36 I Z = 1 mA; for C39 up to C75 I Z = 0.5 mA.
337904630.007.png 337904630.008.png
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX55 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point lead length 8 mm
300
K/W
R th j-a
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Apr 26
5
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