1N4728A_1.pdf

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Voltage regulator diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D130
1N4728A to 1N4749A
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Apr 26
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Philips Semiconductors
Product specification
Voltage regulator diodes
1N4728A to 1N4749A
FEATURES
DESCRIPTION
·
Total power dissipation:
max. 1000 mW
Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages.
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
·
Tolerance series:
±
5%
·
Working voltage range:
nom. 3.3 to 24 V.
handbook, halfpage
k
a
APPLICATIONS
MAM241
·
Low voltage stabilizers.
The diodes are type branded.
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I F
continuous forward current
-
500 mA
I ZM
working current
see Table
“Per type”
I ZSM
non-repetitive peak reverse current
see Table
“Per type”
P tot
total power dissipation
T amb =50
C
-
1000 mW
T stg
storage temperature
- 65
+200
° C
T j
junction temperature
-
65
+200
°
C
ELECTRICAL CHARACTERISTICS
Total series
T j =25 ° C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V F
forward voltage
I F = 200 mA; see Fig.3
-
1.2
V
1996 Apr 26
2
°
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Per type
T j =25 ° C; unless otherwise specified.
WORKING
VOLTAGE
V Z (V) (1)
at I Ztest
TEST CURRENT
I Ztest (mA)
DIFFERENTIAL
RESISTANCE
REVERSE CURRENT
at REVERSE VOLTAGE
WORKING
CURRENT
I ZM (mA)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I ZSM (mA) (2)
TYPE No.
r dif ( W )
at I Ztest
r dif ( W )
at I Z
I R (
m
A)
I Z
(mA)
V R (V)
NOM.
MAX.
MAX.
MAX.
MAX.
MAX.
1N4728A
3.3
76
10
400
1
100
1
276
1380
1N4729A
3.6
69
10
400
1
100
1
252
1260
1N4730A
3.9
64
9
400
1
50
1
234
1190
1N4731A
4.3
58
9
400
1
10
1
217
1070
1N4732A
4.7
53
8
500
1
10
1
193
970
1N4733A
5.1
49
7
550
1
10
1
178
890
1N4734A
5.6
45
5
600
1
10
2
162
810
1N4735A
6.2
41
2
700
1
10
3
146
730
1N4736A
6.8
37
3.5
700
1
10
4
133
660
1N4737A
7.5
34
4
700
0.5
10
5
121
605
1N4738A
8.2
31
4.5
700
0.5
10
6
110
550
1N4739A
9.1
28
5
700
0.5
10
7
100
500
1N4740A
10
25
7
700
0.25
10
7.6
91
454
1N4741A
11
23
8
700
0.25
5
8.4
83
414
1N4742A
12
21
9
700
0.25
5
9.1
76
380
1N4743A
13
19
10
700
0.25
5
9.9
69
344
1N4744A
15
17
14
700
0.25
5
11.4
61
304
1N4745A
16
15.5
16
700
0.25
5
12.2
57
285
1N4746A
18
14
20
750
0.25
5
13.7
50
250
1N4747A
20
12.5
22
750
0.25
5
15.2
45
225
1N4748A
22
11.5
23
750
0.25
5
16.7
41
205
1N4749A
24
10.5
25
750
0.25
5
18.2
38
190
Notes
1. V Z is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
°
C.
2. Half square wave or equivalent sinewave pulse 1
¤ 120 second duration superimposed on I Ztest .
22884309.030.png 22884309.031.png 22884309.032.png
Philips Semiconductors
Product specification
Voltage regulator diodes
1N4728A to 1N4749A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point lead length 4 mm; see Fig.2
110
K/W
1996 Apr 26
4
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Philips Semiconductors
Product specification
Voltage regulator diodes
1N4728A to 1N4749A
GRAPHICAL DATA
10 3
MBG928
handbook, full pagewidth
R th j-tp
(K/W)
d
= 1
10 2
0.75
0.50
0.33
0.20
10
0.10
0.05
0.02
0.01
0
t p
d =
t p
T
T
1
10 - 1
1
10
10 2
10 3
10 4
t p (ms)
10 5
Fig.2 Thermal resistance from junction to tie-point; lead length 4 mm.
MBG925
300
handbook, halfpage
I F
(mA)
200
(1)
(2)
100
0
0
0.5
1.0
V F (V)
(1) T j = 200 ° C; typical values.
(2) T j =25 ° C; typical values.
Fig.3 Forward current as a function of
forward voltage.
1996 Apr 26
5
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