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High-speed diodes

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N4150; 1N4151

High-speed diodes

Product speciﬁcation

Supersedes data of 1996 Sep 03

1999 Jun 01

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Philips Semiconductors

Product speciﬁcation

High-speed diodes

1N4150; 1N4151

FEATURES

DESCRIPTION

·

Hermetically sealed leaded glass

SOD27 (DO-35) package

The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar

technology, and encapsulated in hermetically sealed leaded glass SOD27

(DO-35) packages.

·

High switching speed: max. 4 ns

·

General application

·

Continuous reverse voltage:

max. 50 V

·

Repetitive peak reverse voltage:

max. 75 V

handbook, halfpage

k

a

·

Repetitive peak forward current:

max. 600 mA and 450 mA

respectively.

MAM246

The marking band indicates the cathode.

APPLICATIONS

·

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

High-speed switching

·

1N4150: general purpose use in

computer and industrial

applications

·

1N4151: military and industrial

applications.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V RRM

repetitive peak reverse voltage

-

75

V

V R

continuous reverse voltage

-

50

V

I F

continuous forward current

see Fig.2; note 1

1N4150

-

300

mA

1N4151

-

200

mA

I FRM

repetitive peak forward current

1N4150

-

600

mA

1N4151

-

450

mA

I FSM

non-repetitive peak forward current square wave; T j =25

°

C prior to

surge; see Fig.4

t=1

m

-

4

A

t=1ms

-

1

A

t=1s

-

0.5

A

P tot

total power dissipation

T amb =25

°

C; note 1

-

500

mW

T stg

storage temperature

-

65

+200

C

T j

junction temperature

-

200

° C

Note

1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.

1999 Jun 01

2

s

°

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Philips Semiconductors

Product speciﬁcation

High-speed diodes

1N4150; 1N4151

ELECTRICAL CHARACTERISTICS

T j =25 ° C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V F

forward voltage

see Fig.3

1N4150

I F = 1 mA

540

620

mV

I F = 10 mA

660

740

mV

I F = 50 mA

760

860

mV

I F = 100 mA

820

920

mV

I F = 200 mA

870

1000

mV

1N4151

I F =50mA

-

1000

mV

I R

reverse current

V R = 50 V; see Fig.5

1N4150

-

0.1

m

A

1N4151

-

0.05

m A

I R

reverse current

V R = 50 V; T j = 150

°

C; see Fig.5

1N4150

-

100

m

A

1N4151

-

50

m

A

C d

diode capacitance

f = 1 MHz; V R = 0; see Fig.6

1N4150

-

2.5

pF

1N4151

-

2

pF

t rr

reverse recovery time

when switched from I F = 10 mA to

I R = 1 mA; R L = 100 W ; measured at

I R = 0.1 mA; see Fig.7

1N4150

-

6

ns

when switched from I F = 10 mA to 200 mA

to I R = 10 mA to 200 mA; R L = 100

-

4

ns

W

;

measured at I R = 0.1

´

I F ; see Fig.7

when switched from I F = 200 mA to 400 mA

to I R = 200 mA to 400 mA; R L = 100

-

6

ns

W

;

measured at I R = 0.1

´

I F ; see Fig.7

t rr

reverse recovery time

when switched from I F = 10 mA to

I R = 10 mA; R L = 100

1N4151

W

; measured at

-

4

ns

I R = 1 mA; see Fig.7

when switched from I F = 10 mA to

I R = 60 mA; R L = 100

-

2

ns

W

; measured at

I R = 1 mA; see Fig.7

t fr

forward recovery time

when switched to I F = 200 mA; t r = 0.4 ns;

measured at V F = 1 V; see Fig.8

-

10

ns

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-tp

thermal resistance from junction to tie-point lead length 10 mm

240

K/W

R th j-a

thermal resistance from junction to ambient lead length 10 mm; note 1

350

K/W

Note

1. Device mounted on a printed circuit-board without metallization pad.

1999 Jun 01

3

22884346.018.png

Philips Semiconductors

Product speciﬁcation

High-speed diodes

1N4150; 1N4151

GRAPHICAL DATA

MBG456

MGD291

400

600

handbook, halfpage

handbook, halfpage

I F

(mA)

I F

(mA)

300

(1)

400

200

(1)

(2)

(2)

200

100

0

0

0

100

T amb ( o C)

200

0

1

V F (V)

2

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

(1) 1N4150.

(2) 1N4151.

C; typical values.

(2) T j =25 ° C; typical values.

°

Fig.2 Maximum permissible continuous forward

current as a function of ambient

temperature.

Fig.3 Forward current as a function of forward

voltage.

10 2

MBG704

handbook, full pagewidth

I FSM

(A)

10

1

10 - 1

1

10

10 2

10 3

t p ( m s)

10 4

Based on square wave currents.

T j =25

C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1999 Jun 01

4

(1) T j = 175

°

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Philips Semiconductors

Product speciﬁcation

High-speed diodes

1N4150; 1N4151

10 3

MGD290

MGD004

1.2

handbook, halfpage

I R

handbook, halfpage

m

A)

C d

(pF)

10 2

1.0

10

(1)

(2)

0.8

1

10 - 1

0.6

10 - 2

0.4

0

100

200

T j ( o C)

0

10

20

V R (V)

(1) V R = 75 V; typical values.

(2) V R = 20 V; typical values.

f = 1 MHz; T j =25 ° C.

Fig.5 Reverse current as a function of junction

temperature.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1999 Jun 01

5

(

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