BUZ11.pdf

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BUZ11
N - CHANNEL 50V - 0.03
- 33A TO-220
STripFET
W
Ô
MOSFET
TYPE
V DSS
R DS(on)
I D
BUZ11
50 V
< 0.04
W
33 A
n
TYPICAL R DS(on) = 0.03 W
AVALANCHE RUGGED TECHNOLOGY
n
100% AVALANCHE TESTED
n
HIGH CURRENT CAPABILITY
n
175 o C OPERATING TEMPERATURE
n
3
2
1
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
TO-220
SOLENOID AND RELAY DRIVERS
n
REGULATORS
n
DC-DC & DC-AC CONVERTERS
n
MOTOR CONTROL, AUDIO AMPLIFIERS
n
n
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DS
Drain-source Voltage (V GS = 0)
50
V
V DGR
Drain- gate Voltage (R GS = 20 k
W
)
50
V
V GS
Gate-source Voltage
±
20
V
I D
Drain Current (continuous) at T c = 25 o C
33
A
I DM
Drain Current (pulsed)
134
A
P tot
Total Dissipation at T c = 25 o C
90
W
T stg
Storage Temperature
-65 to 175
o C
T j
Max. Operating Junction Temperature
175
o C
DIN HUMIDITY CATEGORY (DIN 40040)
E
IEC CLIMATIC CATEGORY (DIN IEC 68-1)
55/150/56
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
July 1999
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BUZ11
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max
1.67
o C/W
R thj-amb Thermal Resistance Junction-ambient Max
62.5
o C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max,
33
A
d
< 1%)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 25 V)
200
mJ
ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V (BR)DSS Drain-source
Breakdown Voltage
I D = 250
m
A V GS = 0
50
V
I DSS
Zero Gate Voltage
Drain Current (V GS = 0)
V DS = Max Rating
V DS = Max Rating T j = 125 o C
1
10
m
A
m
A
I GSS
Gate-body Leakage
Current (V DS = 0)
V GS =
±
20 V
±
100
nA
ON ( * )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V GS(th) Gate Threshold Voltage V DS = V GS I D = 1 mA
2.1
3
4
V
R DS(on) Static Drain-source On
Resistance
V GS = 10V I D = 19 A
0.03
0.04
W
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g fs (
*
) Forward
Transconductance
V DS = 15 V I D = 19 A
10
17
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V f = 1 MHz V GS = 0
2100
260
65
pF
pF
pF
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
t r
t d(off)
t f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V DD = 30 V I D = 18 A
R GS = 50
W
V GS = 10 V
40
200
220
110
ns
ns
ns
ns
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BUZ11
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I SD
I SDM
Source-drain Current
Source-drain Current
(pulsed)
33
134
A
A
V SD (
*
) Forward On Voltage
I SD = 60 A V GS = 0
1.8
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
I SD = 36 A di/dt = 100 A/
m
s
75
ns
V DD = 30 V T j = 150 o C
Q rr
0.24
m
C
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
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BUZ11
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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BUZ11
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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