2N4920.PDF

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MEDIUM POWER NPN SILICON TRANSISTOR
2N4920
MEDIUM POWER PNP SILICON TRANSISTOR
n
SGS-THOMSON PREFERRED SALESTYPE
PNP TRANSISTOR
n
APPLICATIONS
n
GENERAL PURPOSE SWITCHING
APPLICATION
GENERAL PURPOSE AMPLIFIER
n
DESCRIPTION
The 2N4920 is a silicon epitaxial planar PNP
transistors in Jedec SOT-32 plastic package,
intended for driver circuits switching and amplifier
applications.
3
2 1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage (I E =0)
-80
V
V CEO
Collector-Emitter Voltage (I B =0)
-80
V
V EBO
Emitter-Base Voltage (I C =0)
-5
V
I C
Collector Current
-1
A
I CM
Collector Peak Current
-3
A
I B
Base Current
-1
A
P tot
Total Dissipation at T c
3
25 o C
30
W
T stg
Storage Temperature
-65 to 150
o C
T j
Max. Operating Junction Temperature
150
o C
April 1997
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2N4920
THERMAL DATA
R thj-case Thermal Resistance Junction-case
Max
4.16
o C/W
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CBO
Collector Cut-off
Current (I E =0)
V CE =ratedV CEO
-100
m
A
I CEX
Collector Cut-off
Current (V BE = -1.5V)
V CE =ratedV CEO
V CE =ratedV CEO
-100
-500
A
m A
T C = 125
o C
I CEO
Collector Cut-off
Current (I B =0)
V CB = -40 V
-500
m
A
I EBO
Emitter Cut-off Current
(I C =0)
V EB =-5V
-1
mA
V CEO(sus )
*
Collector-Emitter
Sustaining Voltage
I C =-10mA
-80
V
V CE(sat)
*
Collector-Emitter
Saturation Voltage
I C =-1A
I B =-0.1A
-0.6
V
V BE(s at)
*
Base-Emitter
Saturation Voltage
I C =-1A
I B =-0.1A
-1.3
V
V BE
*
Base-Emitter Voltage
I C =-1A
V CE =-1V
-1.3
V
h fe
Small Signal Current
Gain
I C =-250mA V CE =-10V f=1KHz 25
f T
Transition frequency
I C =-250mA V CE =-10V f=1MHz
3
MHz
C CBO
Collector Base
Capacitance
I E =0 V CB = -10 V
f = 1KHz
100
pF
*
Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
Safe Operating Area
Derating Curve
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m
337921130.003.png
2N4920
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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2N4920
SOT-32 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.15
0.084
0016114
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2N4920
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
{
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
...
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