BUK555-200A-B_1.pdf

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Philips Semiconductors
Product Specification
PowerMOS transistor
BUK555-200A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL PARAMETER
MAX.
MAX.
UNIT
logic level field-effect power
transistor in a plastic envelope.
BUK555
-200A -200B
The device is intended for use in
V DS
Drain-source voltage
200
200
V
Switched Mode Power Supplies
I D
Drain current (DC)
14
13
A
(SMPS), motor control, welding,
P tot
Total power dissipation
125
125
W
DC/DC and AC/DC converters, and
T j
Junction temperature
175
175
˚C
in automotive and general purpose
R DS(ON)
Drain-source on-state
0.23
0.28
W
switching applications.
resistance;
V GS = 5 V
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
d
1
gate
2
drain
3
source
g
tab drain
123
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V DS
Drain-source voltage
-
-
200
V
V DGR
Drain-gate voltage
R GS = 20 k
W
-
200
V
±
V GS
Gate-source voltage
-
-
15
V
±
V GSM
Non-repetitive gate-source voltage t p
£
50
m
s
-
20
V
-200A
-200B
I D
Drain current (DC)
T mb = 25 ˚C
-
14
13
A
I D
Drain current (DC)
T mb = 100 ˚C
-
10
9.2
A
I DM
Drain current (pulse peak value)
T mb = 25 ˚C
-
56
52
A
P tot
Total power dissipation
T mb = 25 ˚C
-
125
W
T stg
Storage temperature
-
- 55
175
˚C
T j
Junction Temperature
-
-
175
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance junction to
-
-
1.2
K/W
mounting base
R th j-a
Thermal resistance junction to
-
60
-
K/W
ambient
April 1993
1
Rev 1.100
Logic level FET
22889536.010.png 22889536.011.png 22889536.012.png 22889536.013.png
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK555-200A/B
STATIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V (BR)DSS
Drain-source breakdown
V GS = 0 V; I D = 0.25 mA
200
-
-
V
voltage
V GS(TO)
Gate threshold voltage
V DS = V GS ; I D = 1 mA
1.0
1.5
2.0
V
I DSS
Zero gate voltage drain current V DS = 200 V; V GS = 0 V; T j = 25 ˚C
-
1
10
A
m
I DSS
Zero gate voltage drain current V DS = 200 V; V GS = 0 V; T j =125 ˚C
-
0.1
1.0
mA
I GSS
Gate source leakage current
V GS =
±
10 V; V DS = 0 V
-
10
100
nA
R DS(ON)
Drain-source on-state
V GS = 5 V;
BUK555-200A
-
0.2
0.23
W
resistance
I D = 7 A
BUK555-200B
-
0.24 0.28
W
DYNAMIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
g fs
Forward transconductance
V DS = 25 V; I D = 7 A
8.0
15
-
S
C iss
Input capacitance
V GS = 0 V; V DS = 25 V; f = 1 MHz
-
1600 2000
pF
C oss
Output capacitance
-
180
250
pF
C rss
Feedback capacitance
-
55
80
pF
t d on
Turn-on delay time
V DD = 30 V; I D = 3 A;
-
25
40
ns
t r
Turn-on rise time
V GS = 5 V; R GS = 50
W
;
-
45
75
ns
t d off
Turn-off delay time
R gen = 50
W
-
140
180
ns
t f
Turn-off fall time
-
40
55
ns
L d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I DR
Continuous reverse drain
-
-
-
14
A
current
I DRM
Pulsed reverse drain current
-
-
-
56
A
V SD
Diode forward voltage
I F = 14 A ; V GS = 0 V
-
1.0
1.5
V
t rr
Reverse recovery time
I F = 14 A; -dI F /dt = 100 A/
m
s;
-
200
-
ns
Q rr
Reverse recovery charge
V GS = 0 V; V R = 30 V
-
0.25
-
m
C
AVALANCHE LIMITING VALUE
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
W DSS
Drain-source non-repetitive
I D = 14 A ; V DD
£
100 V ;
-
-
100
mJ
unclamped inductive turn-off
V GS = 5 V ; R GS = 50
W
energy
April 1993
2
Rev 1.100
Logic level FET
22889536.001.png
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK555-200A/B
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
10
Zth j-mb / (K/W)
BUKx55-lv
1
D =
0.5
0.2
0.1
0.05
0.02
0.1
0.01
0
P
D
t p
D =
T
T
t
0.001
0
20 40 60 80 100 120 140 160 180
Tmb / C
1E-07
1E-05
1E-03
1E-01
1E+01
t / s
Fig.1. Normalised power dissipation.
PD% = 100
×
P D /P D 25 ˚C = f(T mb )
Fig.4. Transient thermal impedance.
Z th j-mb = f(t); parameter D = t p /T
120
110
100
90
80
70
60
50
40
30
20
10
0
ID%
Normalised Current Derating
30
ID / A
BUK555-200A
10
4
5
20
VGS / V =
3
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
0
0
2
4
6
8 10 12 14 16 18 20
VDS / V
Fig.2. Normalised continuous drain current.
ID% = 100
×
I D /I D 25 ˚C = f(T mb ); conditions: V GS
³
5 V
Fig.5. Typical output characteristics, T j = 25 ˚C.
I D = f(V DS ); parameter V GS
ID / A
BUK555-200A,B
RDS(ON) / Ohm
BUK555-200A
100
1.0
A
B
2.5
3
3.5
tp = 10 us
0.8
VGS / V =
10
100 us
4
0.6
5
1 ms
10 ms
DC
0.4
1
100 ms
10
0.2
0.1
1
10
100
1000
0
0
4
8
12
16
20
24
28
VDS / V
ID / A
Fig.3. Safe operating area. T mb = 25 ˚C
I D & I DM = f(V DS ); I DM single pulse; parameter t p
Fig.6. Typical on-state resistance, T j = 25 ˚C.
R DS(ON) = f(I D ); parameter V GS
April 1993
3
Rev 1.100
Logic level FET
t p
22889536.002.png 22889536.003.png 22889536.004.png 22889536.005.png
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK555-200A/B
30
ID / A
BUK555-200A
VGS(TO) / V
2
max.
20
typ.
1
min.
10
Tj / C =
150
25
0
0
0
2
4
6
8
-60
-20
20
60
100
140
180
VGS / V
Tj / C
Fig.7. Typical transfer characteristics.
I D = f(V GS ) ; conditions: V DS = 25 V; parameter T j
Fig.10. Gate threshold voltage.
V GS(TO) = f(T j ); conditions: I D = 1 mA; V DS = V GS
gfs / S
BUK555-200A
ID / A
SUB-THRESHOLD CONDUCTION
20
1E-01
1E-02
15
1E-03
2 %
typ
98 %
10
1E-04
5
1E-05
0
1E-06
0
4
8
12
16
20
24
28
0
0.4
0.8
1.2
1.6
2
2.4
ID / A
VGS / V
Fig.8. Typical transconductance, T j = 25 ˚C.
g fs = f(I D ); conditions: V DS = 25 V
Fig.11. Sub-threshold drain current.
I D = f(V GS) ; conditions: T j = 25 ˚C; V DS = V GS
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
Normalised RDS(ON) = f(Tj)
10000
C / pF
BUK5y5-200
Ciss
1000
100
Coss
Crss
10
-60
-20
20
60
100
140
180
0
20
40
Tj / C
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = R DS(ON) /R DS(ON)25 ˚C = f(T j ); I D = 7 A; V GS = 5 V
Fig.12. Typical capacitances, C iss , C oss , C rss .
C = f(V DS ); conditions: V GS = 0 V; f = 1 MHz
April 1993
4
Rev 1.100
Logic level FET
22889536.006.png 22889536.007.png
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK555-200A/B
12
VGS / V
BUK555-200
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
10
VDS / V =40
8
160
6
4
2
0
0
20
40
20
40
60
80
100 120 140 160 180
Tmb / C
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V GS = f(Q G ); conditions: I D = 14 A; parameter V DS
Fig.15. Normalised avalanche energy rating.
W DSS % = f(T mb ); conditions: I D = 14 A
IF / A
BUK555-200A
30
+
VDD
L
20
VDS
-
Tj / C = 150
25
VGS
-ID/10 0
10
0
T.U.T.
RGS
R 01
shunt
0
0
1
2
VSDS / V
Fig.16. Avalanche energy test circuit.
Fig.14. Typical reverse diode current.
I F = f(V SDS ); conditions: V GS = 0 V; parameter T j
W DSS =
0.5
×
LI 2
×
BV DSS /(
BV DSS -
V DD )
April 1993
5
Rev 1.100
Logic level FET
22889536.008.png 22889536.009.png

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