SFP50N06.pdf

SemiWell Semiconductor

SFP50N06

N-Channel MOSFET

Features

■ Low R DS (on) (0.023 Ω )@V GS =10V

■ Low Gate Charge (Typical 39nC)

■ Low Crss (Typical 110pF)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range (175°C)

Symbol

{

2. Drain

●

◀

▲

1. Gate

{

●

{

3. Source

General Description

This Power MOSFET is produced using SemiWell’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a low

gate charge with superior switching performance, and rugged

avalanche characteristics. This Power MOSFET is well suited

for synchronous DC-DC Converters and Power Management in

portable and battery operated products.

TO-220

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

V DSS

Drain to Source Voltage

I D

Continuous Drain Current(@T C = 25 °C)

Continuous Drain Current(@T C = 100 °C)

35.2

I DM

Drain Current Pulsed (Note 1)

200

V GS

Gate to Source Voltage

± 20

E AS

Single Pulsed Avalanche Energy (Note 2)

470

E AR

Repetitive Avalanche Energy (Note 1)

I AR

Avalnche Current (Note 1)

dv/dt

Peak Diode Recovery dv/dt (Note 3)

V/ns

P D

Total Power Dissipation(@T C = 25 °C)

130

Derating Factor above 25 °C

0.87

W/°C

T STG, T J

Operating Junction Temperature & Storage Temperature

- 55 ~ 175

°C

T L

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Value

Symbol

Parameter

Units

Min.

Typ.

Max.

R θ JC

Thermal Resistance, Junction-to-Case

1.15

°C/W

R θ CS

Thermal Resistance, Case to Sink

0.5

°C/W

R θ JA

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

December, 2002. Rev. 1.

1/7

{

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◀

▲

{

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{

SFP50N06

Electrical Characteristics ( T C = 25 °C unless otherwise noted )

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

Off Characteristics

BV DSS

Drain-Source Breakdown Voltage

V GS = 0V, I D = 250uA

Δ BV DSS /

Δ T J

Breakdown Voltage Temperature

coefficient

I D = 250uA, referenced to 25 °C

0.06

V/°C

V DS = 60V, V GS = 0V

I DSS

Drain-Source Leakage Current

V DS = 48V, T C = 150 °C

Gate-Source Leakage, Forward

V GS = 20V, V DS = 0V

100

I GSS

Gate-source Leakage, Reverse

V GS = -20V, V DS = 0V

-100

On Characteristics

V GS(th)

Gate Threshold Voltage

V DS = V GS , I D = 250uA

2.0

4.0

R DS(ON)

Static Drain-Source On-state Resis-

tance

V GS =10 V, I D = 25A

0.018 0.023

Ω

Dynamic Characteristics

C iss

Input Capacitance

880

1140

C oss

Output Capacitance

V GS =0 V, V DS =25V, f = 1MHz

430

560

C rss

Reverse Transfer Capacitance

110

140

Dynamic Characteristics

t d(on)

Turn-on Delay Time

130

V DD =30V, I D =25A, R G =50 Ω

t r

Rise Time

185

380

t d(off)

Turn-off Delay Time

160

※ see fig. 13. (Note 4, 5)

t f

Fall Time

130

Q g

Total Gate Charge

V DS =48V, V GS =10V, I D =50A

Q gs

Gate-Source Charge

9.5

Q gd

Gate-Drain Charge(Miller Charge)

※ see fig. 12. (Note 4, 5)

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Unit.

I S

Continuous Source Current

Integral Reverse p-n Junction

Diode in the MOSFET

I SM

Pulsed Source Current

200

V SD

Diode Forward Voltage

I S =50A, V GS =0V

1.5

t rr

Reverse Recovery Time

I S =50A,V GS =0V,dI F /dt=100A/us

Q rr

Reverse Recovery Charge

※ NOTES

1. Repeativity rating : pulse width limited by junction temperature , δ <1 ％

2. L = 220uH, I AS =50A, V DD = 25V, R G = 0 Ω , Starting T J = 25°C

3. ISD ≤ 50A, di/dt ≤ 300A/us, V DD ≤ BV DSS , Starting T J = 25°C

4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

5. Essentially independent of operating temperature.

2/7

SFP50N06

Fig 1. On-State Characteristics

Fig 2. Transfer Characteristics

10 2

V GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

10 2

175 o C

10 1

25 o C

※

1. 250µ s Pulse Test

2. T C = 25 ℃

Notes :

-55 o C

※

1. V DS = 30V

2. 250µ s Pulse Test

Notes :

10 0

10 -1

10 0

10 1

V DS , Drain-Source Voltage[V]

V GS , Gate-Source Voltage [V]

Fig 3. On Resistance Variation vs.

Drain Current and Gate Voltage

Fig 4. On State Current vs.

Allowable Case Temperature

10 2

V GS =10V

10 1

V GS =20V

175 o C

25 o C

※

1. V GS = 0V

2. 250µ s Pulse Test

Notes :

Note T

※ J = 25 o C

10 0

100

120

140

160

180

200

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

I D , Drain Current[ A ]

V SD , Source-Drain voltage[V]

Fig 5. Capacitance Characteristics

Fig 6. Gate Charge Characteristics

3000

2500

C iss =C gs +C gd (C ds =shorted)

C oss =C ds +C gd

C rss =C gd

V DS = 30V

V DS = 48V

2000

※

1. V GS = 0V

2. f=1MHz

Notes :

1500

1000

C iss

C oss

500

C rss

Note : I

※ D = 50A

V DS , Drain-Source Voltage [V]

Q g , Total Gate Charge [nC]

3/7

SFP50N06

Fig 7. Breakdown Voltage Variation

vs. Junction Temperature

Fig 8. On-Resistance Variation

vs. Junction Temperature

1.2

3.0

2.5

1.1

2.0

1.0

1.5

1.0

0.9

※

1. V GS = 0 V

2. I D = 250 µ A

Notes :

0.5

※

1. V GS = 10 V

2. I D = 25 A

0.8

0.0

-100

-50

100

150

200

-100

-50

100

150

200

T J , Junction Temperature [ o C]

Fig 9. Maximum Safe Operating Area

Fig 10. Maximum Drain Current

vs. Case Temperature

10 3

Operation in This Area

is Limited by R DS(on)

10 2

100 µ s

1 ms

10 ms

10 1

10 0

※

1. T C = 25 o C

2. T J = 150 o C

3. Single Pulse

Notes :

10 -1

10 0

10 1

10 2

100

125

150

175

V DS , Drain-Source Voltage [V]

T C' Case Temperature [ o C]

Fig 11. Transient Thermal Response Curve

10 0

D=0.5

※

1. Z θ J (t) = 1.15 /W Max.

℃

2. D uty Factor, D =t 1 /t 2

3. T JM - T C = P DM * Z θ J (t)

0.2

0.1

10 -1

0.05

0.02

0.01

single pulse

10 -2

10 -5

10 -4

10 -3

10 -2

10 -1

10 0

10 1

t 1 , Square W ave Pulse D uration [sec]

4/7

Notes :

N otes :

SFP50N06

Fig. 12. Gate Charge Test Circuit & Waveforms

Same Type

as DUT

V GS

50K Ω

Q g

12V

200nF

10V

300nF

V GS

V DS

Q gs

Q gd

DUT

1mA

Charge

Fig 13. Switching Time Test Circuit & Waveforms

R L

V DS

90%

V DD

( 0.5 rated V DS )

10V

V in

10%

DUT

R G

Pulse

Generator

t d(on)

t r

t d(off) t f

t on

t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

E AS = L I AS 2

--- 2

BV DSS

V DS

E AS = L I AS 2

--- 2

--------------------

BV DSS -- V DD

V DD

BV DSS

I D

I AS

R G

I D (t)

10V

DUT

V DD

V DS (t)

t p

Time

5/7

V GS

Same Type

as DUT

50K Ω

Q g

12V

200nF

10V

300nF

V DS

V GS

Q gs

Q gd

DUT

1mA

Charge

R L

V DS

90%

V DD

( 0.5 rated V DS )

V DD

( 0.5 rated V DS )

V DD

( 0.5 rated V DS )

10%

10V

V in

DUT

R G

Pulse

Generator

Pulse

Generator

Pulse

Generator

t d(on)

t r

t d(off) t f

t on

t off

BV DSS

--- 2

--------------------

BV DSS -- V DD

E AS = L I AS 2

BV DSS

I AS

I D (t)

V DD

V DS (t)

Time

t p

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