TDA2005.pdf

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TDA2005
20W BRIDGE AMPLIFIER FOR CAR RADIO
High output power : P O = 10 + 10 W@R L =2
W
,
d = 10% ; P O = 20W@R L =4 W ,d=1%.
High reliability of the chip and package with addi-
tional complete safety during operation thanks to
protection against :
. OUTPUT DC AND AC SHORT CIRCUIT TO
GROUND
. LOAD DUMP VOLTAGE SURGE
MULTIWATT11
. VERY INDUCTIVE LOADS
Flexibility in use : bridge or stereo booster ampli-
fiers with or without boostrap and with programma-
ble gain and bandwidth.
Space and cost saving : very low number of
external components, very simple mounting sys-
tem with no electrical isolation between the pack-
age and the heatsink (one screw only).
In addition, the circuit offers loudspeaker protec-
tion during short circuit for one wire to ground.
ORDERING NUMBERS : TDA2005M (Bridge Appl.)
TDA2005S (Stereo Appl.)
DESCRIPTION
The TDA2005 is class B dual audio power amplifier
in MULTIWATT ) package specifically designed for
car radio application : power booster amplifiers
are easily designed using this device that provides
a high current capability (up to 3.5 A) and that can
drive very low impedance loads (down to 1.6
W
in
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V s
Operating Supply Voltage
18
V
V s
DC Supply Voltage
28
V
V s
Peak Supply Voltage (for 50 ms)
40
V
I o (*)
Output Peak Current (non repetitive t = 0.1 ms)
4.5
A
I o (*)
Output Peak Current (repetitive f
.
10 Hz)
3.5
A
P tot
Power Dissipation at T case =60
°
C
30
W
T stg ,T j Storage and Junction Temperature
– 40 to 150
°
C
(*) The max. output current is internally limited.
PIN CONNECTION
11
BOOTSTRAP(1)
10
OUTPUT(1)
9
+V S
8
OUTPUT(2)
7
BOOTSTRAP(2)
6
GND
5
INPUT+(2)
4
INPUT-(2)
3
SVRR
2
INPUT-(1)
1
INPUT+(1)
TAB CONNECTED TO PIN 6
D95AU318
October 1998
1/20
. OVERRATING CHIP TEMPERATURE
. FORTUITOUS OPEN GROUND
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TDA2005
SCHEMATIC DIAGRAM
THERMAL DATA
Symbol
Parameter
Value
Unit
R th j-case
Thermal Resistance Junction-case
Max.
3
° C/W
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TDA2005
BRIDGE AMPLIFIER APPLICATION (TDA2005M)
Figure 1 : Test and Application Circuit (Bridge amplifier)
Figure 2 : P.C. Board and Components Layout of Figure 1 (1:1 scale)
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TDA2005
ELECTRICAL CHARACTERISTICS (refer to the Bridge applicationcircuit, T amb =25 o C, G V = 50dB,
R th (heatsink )=4 o C/W, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V s
Supply Voltage
8
18
V
V os
Output Offset Voltage (1)
(between pin 8 and pin 10)
V s = 14.4V
V s = 13.2V
150
150
mV
mV
I d
Total Quiescent Drain Current
V s = 14.4V
R L =4
W
75
70
150
160
mA
mA
V s = 13.2V
R L = 3.2
W
P o
Output Power
d = 10%
f = 1 Hz
W
V s = 14.4V
W
R L = 3.2
18
20
17
20
22
19
W
V s = 13.2V
R L = 3.2
W
d
Distortion
f = 1kHz
V s = 14.4V
R L =4
W
P o = 50mW to 15W
V s = 13.2V
1
%
R L = 3.2
W
1
%
P o = 50mW to 13W
V i
Input Sensitivity
f = 1kHz
P o =2W
R L =4
W
9
8
mV
mV
P o =2W
R L = 3.2
W
R i
Input Resistance
f = 1kHz
70
k
W
f L
Low Frequency Roll Off (– 3dB)
R L = 3.2
W
40
Hz
f H
High Frequency Roll Off (– 3dB) R L = 3.2
W
20
kHz
G v
Closed Loop Voltage Gain
f = 1kHz
50
dB
e N
Total Input Noise Voltage
R g = 10k
W
(2)
3
10
m
V
SVR
Supply Voltage Rejection
F
f ripple = 100Hz, V ripple = 0.5V
W
,C 4 =10
m
45
55
dB
h
Efficiency
V s = 14.4V, f = 1 kHz
P o = 20W
R L =4
W
60
60
%
%
P o = 22W
R L = 3.2
W
V s = 13.2V, f = 1 kHz
P o = 19W
R L = 3.2
W
58
%
T j
Thermal Shut-down Junction
Temperature
W
f = 1kHz, P tot = 13W
145
°
C
V OSH
Output Voltage with one Side of
the Speaker shorted to ground
V s = 14.4V
R L =4
W
Notes : 1. For TDA2005M only
2. Bandwith Filter : 22Hz to 22kHz.
V s = 13.2V
R L = 3.2
W
2
V
4/20
R L =4
R g = 10k
V s = 14.4V, R L =4
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TDA2005
Figure 3 : Output Offset Voltage versus
Supply Voltage
Figure 4 : Distortion versus Output Power
(bridge amplifier)
Figure 5 : Distortion versus Output Power
(bridge amplifier)
BRIDGE AMPLIFIER DESIGN
The following consideraions can be useful when designing a bridge amplifier.
Parameter
Single Ended
Bridge
V omax Peak Output Voltage (before clipping)
1
2 (V s –2V CE sat )
V s –2V CE sat
I o max
Peak Output Current (before clippling)
1
2
V S - 2V CE sat
R L
V S
-
2V CE sat
R L
4 ( V S - 2V CE sat )
2
V S
-
2V CE sat
)
2
P omax RMS Output Power (before clipping)
2R L
2R L
Where : V CE sat = output transistors saturation voltage
V S = allowable supply voltage
R L = load impedance
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