BUK856-400_IZ_2.pdf

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Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
BUK856-400 IZ
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Protected N-channel logic-level
SYMBOL PARAMETER
MIN. TYP. MAX. UNIT
insulated gate bipolar power
transistor in a plastic envelope,
V (CL)CER
Collector-emitter clamp voltage
370 410 500
V
intended for automotive ignition
V CEsat
Collector-emitter on-state voltage
2.2
V
applications. The device has
I C
Collector current (DC)
20
A
built-in zener diodes providing
P tot
Total power dissipation
100
W
active collector voltage clamping
E CERS
Clamped energy dissipation
300 mJ
and ESD protection up to 2 kV.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
c
1
gate
2
collector
3
emitter
g
tab collector
123
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CE
Collecter-emitter voltage
t p
£
500
m
s
-
500
V
V CE
Collector-emitter voltage
Continuous
-20
50
V
±
V GE
Gate-emitter voltage
-
-
12
V
I C
Collector current (DC)
T mb = 100 ˚C
-
10
A
I C
Collector current (DC)
T mb = 25 ˚C
-
20
A
I CM
Collector current (pulsed peak value, T mb = 25 ˚C; t p
£
10 ms;
-
25
A
on-state)
V CE
£
15 V
I CLM
Collector current (clamped inductive 1 k
W
£
R G
£
10 k
W
-
10
A
load)
E CERS
Clamped turn-off energy
T mb = 25 ˚C; I C = 10 A; R G = 1 k
W
;
-
300
mJ
(non-repetitive)
see Figs. 23,24
E CERR 1
Clamped turn-off energy (repetitive) T mb = 100 ˚C; I C = 8 A; R G = 1 k
W
;
-
125
mJ
f = 50 Hz
E ECR 1
Reverse avalanche energy
I E = 1 A; f = 50 Hz
-
5
mJ
(repetitive)
P tot
Total power dissipation
T mb = 25 ˚C
-
125
W
T stg
Storage temperature
-
-55
150
˚C
T j
Operating Junction Temperature
-
-40
150
˚C
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V C
Electrostatic discharge capacitor
Human body model
-
2
kV
voltage
(100 pF, 1.5 k
W
)
1 This applies to short-term operation in ignition circuits with open-secondary ignition coil.
November 1998
1
Rev. 1.400
Protected Logic-Level IGBT
22889465.010.png
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
BUK856-400 IZ
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R th j-mb
Junction to mounting base
-
1.0
K/W
R th j-a
Junction to ambient
In free air
60
-
K/W
STATIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V (BR)CG
Collector-gate zener
2 mA
£
-I G
£
5 mA; -40
£
T j
£
150˚C
370
410
500
V
breakdown voltage
V (BR)EC
Reverse collector-emitter
I E = 10 mA
20
30
50
V
breakdown voltage
±
V (BR)GES Gate-emitter breakdown
I G =
±
1 mA
12
16
20
V
voltage
V GE(TO)
Gate threshold voltage
V CE = V GE ; I C = 1 mA
1
1.5
2
V
V GE(TO)
Gate threshold voltage
V CE = V GE ; I C = 1 mA;
0.6
-
2.4
V
-40
£
T j
£
150˚C
I CES
Zero gate voltage collector
V CE = 50 V; V GE = 0 V; T j = 25 ˚C
-
0.01
10
m
A
current
I CES
Zero gate voltage collector
T j = 125 ˚C
-
0.01
1
mA
current
I EC
Reverse collector current
V CE = -20 V
-
0.2
5
mA
I EC
Reverse collector current
V CE = -20 V; T j = 125˚C
-
2
20
mA
I GES
Gate emitter leakage current
V GE =
±
6 V
-
0.1
1
m
A
T j = 150˚C
-
5
100
m
A
V CEsat
Collector-emitter on-state
V GE = 4.5 V; I C = 8 A
-
1.2
2.2
V
voltage
V GE = 3.5 V; I C = 6 A;
-
1.2
2.2
V
-40
£
T j
£
150˚C
DYNAMIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V (CL)CER
Collector-emitter clamp voltage R G = 1 k
W
; I C = 10 A;
370
410
500
V
(peak value)
150˚C; Inductive load; see
Figs. 23,24
£
T j
£
g fe
Forward transconductance
V CE = 15 V; I C = 4 A
5.5
15
20
S
C ies
Input capacitance
V GE = 0 V; V CE = 25 V; f = 1 MHz
850
940 1200
pF
C oes
Output capacitance
-
95
130
pF
C res
Feedback capacitance
-
30
50
pF
t d off
Turn-off delay time
I C = 8 A; V CL = 300 V; R G = 1 k
W
;
-
13
18
m
s
t f
Fall time
V GE = 5 V; T j = 125˚C;
-
6
10
m
s
t c
Crossover Time
Inductive load; see Figs. 20,21
-
12
-
m
s
E off
Turn-off Energy loss
-
13
-
mJ
November 1998
2
Rev. 1.400
Protected Logic-Level IGBT
-40
22889465.011.png 22889465.012.png
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
BUK856-400 IZ
1E+01
Zth(j-mb) / (K/W)
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
D=
1E+00
0.5
1E-01
0.2
0.1
0.05
0.02
1E-02
P
t p
t p
D =
D
T
0
t
T
1E-03
1E-07
1E-05
1E-03
1E-01
1E+01
0
20
40
60
80
100 120 140
t / s
Tmb / C
Fig.1. Transient thermal impedance
Z th j-mb = f(t) ; parameter D = t p /T
Fig.4. Normalised power dissipation.
PD% = 100.P D /P D 25˚C = f(T mb )
IC / A
BUK8Y6-400IZ
ICLM / A
BUK8Y6-400IZ
15
I
CLM
10
10
Self-clamped
1
5
0.1
0
0
200
400
600
0
50
100
150
200
VCE / V
dVCE/dt (V/us)
Fig.2. Turn-off Safe Operating Area
conditions: T j
£
T jmax. ; R G
³
1 k
W
Fig.5. Derating of I CLM with turn-off dV CE /dt
conditions: V CE
£
500 V; T j
£
T jmax.
3
VCE / V
PMG35A
2
VCE / V
PMG35A
Tj / C =
150
25
-40
Tj / C =
150
25
-40
1.5
2
1
1
0.5
0
0
4
8
12
16
20
24
0
0
4
8
12
16
20
24
IC / A
IC / A
Fig.3. Typical On-state Voltage
V CEsat = f(I C ); parameter T j ; conditions: V GE = 3.5 V
Fig.6. Typical On-state Voltage
V CEsat = f(I C ); parameter T j ; conditions: V GE = 5 V
November 1998
3
Rev. 1.400
Protected Logic-Level IGBT
22889465.013.png 22889465.001.png 22889465.002.png
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
BUK856-400 IZ
30
IC / A
PMG35A
+/- IGES / A
PMG35A
1E-2
5
4
VGE / V = 4
1E-3
3
IE-4
20
2.8
1E-5
2.6
1E-6
10
2.4
1E-7
2.2
1E-8
2
0
0
2
4
6
8
10
1E-9
0
5
10
15
20
VCE / V
VGE / V
Fig.7. Typical Output Characteristics
I C = f(V CE ); parameter V GE ; conditions: T j = 25˚C
Fig.10. Typical gate-emitter charcteristics
I GES = f(V GE ); conditions: V CE = 0 V; T j = 25˚C
30
IC / A
PMG35A
10
ICES / mA
PMG 3 5A
150
25
-40
Tj / C =
150
25
-40
Tj / C =
20
1
10
0
0
1
2
3
4
0.1
350
370
390
410
430
450
VGE / V
VCE / V
Fig.8. Typical Transfer Characteristics
I C = f(V GE ), parameter T j ; conditions: V CE = 10 V
Fig.11. Typical collector clamp characteristics
I CES = f(V CE ); parameter T j; conditions: V GE = 0 V
35
gfe / S
PMG35A
2.5
VGE(TO) / V
BUK856-400IZ
30
25
2
max.
20
1.5
typ.
15
10
1
min.
150
25
-40
5
Tj / C =
0
0
10
20
30
0.5
-40 -20 0 20 40 60 80 100 120 140
Tj / C
IC / A
Fig.9. Typical Forward Transconductance
g fe = f(I C ); parameter T j; conditions: V CE = 10 V
Fig.12. Gate Threshold Voltage
V GE(TO) = f(T j ); conditions: I C = 1 mA; V CE = V GE
November 1998
4
Rev. 1.400
Protected Logic-Level IGBT
22889465.003.png
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
BUK856-400 IZ
1E-01
IC / A
SUB-THRESHOLD CONDUCTION
100
t / us, E / mJ
PMG35A
1E-02
td(off)
E(off)
1E-03
2 %
typ
98 %
10
1E-04
tf
1E-05
1E-06
1
0
0.4
0.8
1.2
1.6
2
2.4
0
1
2
3
4
5
VGE / V
Rg / kOhm
Fig.13. Sub-threshold collector current
I C = f(V GE ); T j = 25˚C; V CE = V GE
Fig.16. Typical Switching Characteristics vs. R G
conditions: T j =125 ˚C; I C =8 A; V CL =300 V; L C =5 mH.
6
VGE / V
PMG35A
t / us, E / mJ
PMG35A
15
5
Vcc / V = 12
4
td(off)
300
10
E(off)
3
2
5
1
tf
0
0
10
20
30
0
0
50
100
150
Qg / nC
Tj / C
Fig.14. Typical Turn-on Gate Charge Characteristics
V GE = f(Q G ); conditions: I C = 8 A.
Fig.17. Typical Switching Characteristics vs. T j
conditions: I C =8 A; V CL =300 V; R G =1 k
W
; L C =5 mH.
10000
C / pf
pmg35a
t / us, E / mJ
PMG35A
15
td(off)
1000
Cies
10
tf
100
5
Coes
10
Cres
0
E(off)
0.01
0.1
1
10
100
1000
0
2
4
6
8
10
VCE / V
IC / A
Fig.15. Typical Capacitances C ies , C oes , C res
C = f(V CE ); conditions: V GE = 0 V; f = 1 MHz
Fig.18. Typical Switching Characteristics vs. I C
conditions: T j =125 ˚C V CL =300 V; R G =1 k
W
; L C =5 mH.
November 1998
5
Rev. 1.400
Protected Logic-Level IGBT
22889465.004.png 22889465.005.png 22889465.006.png 22889465.007.png 22889465.008.png 22889465.009.png

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