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IRFP250
Data Sheet
January 2002
33A, 200V, 0.085 Ohm, N-Channel
Power MOSFET
Features
• 33A, 200V
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
DS(ON)
= 0.085
Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA9295.
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
D
IRFP250
TO-247
IRFP250
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
©2002 Fairchild Semiconductor Corporation
IRFP250 Rev. B
•r
44330325.009.png 44330325.010.png 44330325.011.png
IRFP250
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP250
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
200
V
Drain to Gate Voltage (R
GS
= 20k
Ω)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
33
21
A
A
o
T
= 100
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
130
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
180
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.44
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
810
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
260
o
C
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Drain to Source Breakdown Voltage
BV
DSS
D
= 250
A, V
GS
= 0V (Figure 10)
200
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
µ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
250
µ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
33
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
D
= 17A, V
GS
= 10V (Figures 8, 9)
-
0.07 0.085
Ω
Forward Transconductance (Note 2)
g
fs
V
DS
≥
50V, I
D
= 17A (Figure 12)
13
19
-
S
Turn-On Delay Time
t
d(ON)
V
DD
=
100V, I
D
=
30A, R
GS
= 6.2
Ω,
V
GS
=
10V,
-
18
30
ns
R
= 3.2
Ω
Rise Time
t
L
-
125
180
ns
r
MOSFET Switching Times are Essentially
Independent of Operating Temperature
Turn-Off Delay Time
t
d(OFF)
-
70
100
ns
Fall Time
t
f
-
80
120
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 30A, V
DS
= 0.8 x Rated BV
DSS,
-
79
120
nC
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of Operating
Temperature
G(REF)
Gate to Source Charge
Q
gs
-
12
-
nC
Gate to Drain “Miller” Charge
Q
-
42
-
nC
gd
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
2000
-
pF
Output Capacitance
C
OSS
-
800
-
pF
Reverse Transfer Capacitance
C
RSS
-
300
-
pF
Internal Drain Inductance
L
D
Measured from the Contact
Screw on Header Closer to
Source and Gate Pins to
Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 6.0mm (0.25in) from
Header to Source Bonding
Pad
D
-
12.5
-
nH
L D
G
L S
S
Thermal Resistance, Junction to Case
R
θ
JC
-
-
0.70
o
C/W
Thermal Resistance, Junction to Ambient
R
θ
JA
Free Air Operation
-
-
30
o
C/W
©2002 Fairchild Semiconductor Corporation
IRFP250 Rev. B
µ
I
I
I
44330325.012.png 44330325.001.png
IRFP250
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
D
-
-
33
A
Pulse Source to Drain Current (Note 3)
I
SDM
-
-
130
A
G
S
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 33A, V
GS
= 0V (Figure 13)
-
-
2.0
V
Reverse Recovery Time
rr
T
J
= 25
o
C, I
SD
= 30A, dI
SD
/dt = 100A/
µ
s
140
-
630
ns
Reverse Recovery Charge
Q
RR
T
J
= 25
o
C, I
SD
= 30A, dI
SD
/dt = 100A/
µ
s
1.8
-
8.1
µ
C
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
≤
300
µ
s, duty cycle
≤
≤
DD
= 50V, starting T
J = 25 o C, L = 1.1mH, R G = 50 Ω, peak I AS = 33A.
Typical Performance Curves Unless Otherwise Specified
1.2
40
1.0
32
0.8
24
0.6
16
0.4
0.2
8
0
0
0
50
100
150
25
50
75
100
125
150
T C , CASE TEMPERATURE ( o C)
T C , CASE TEMPERATURE ( o C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
P DM
0.01
10 -2
t 1
t 2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x Z
10 -3
10 -5
θ
JC + T C
10 -4
10 -3
10 -2
0.1
1
10
t 1 , RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRFP250 Rev. B
t
NOTES:
2. Pulse test: pulse width
44330325.002.png 44330325.003.png 44330325.004.png
IRFP250
Typical Performance Curves Unless Otherwise Specified (Continued)
10 3
50
PULSE DURATION = 80
µ
s
OPERATION IN THIS
V GS = 10V
DUTY CYCLE = 0.5% MAX
AREA IS LIMITED
V GS = 7V
BY r DS(ON)
10 µ s
40
10 2
100
µ
s
30
V GS = 6V
10
1ms
10ms
20
1
DC
10
V GS = 5V
T J = MAX RATED
T C = 25 o C
V GS = 4V
SINGLE PULSE
0.1
0
0
20
40
60
80
100
1
10
10 2
10 3
V DS , DRAIN TO SOURCE VOLTAGE (V)
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
50
10 2
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
V GS = 10V
s
DUTY CYCLE = 0.5% MAX
V DS ≥ 50V
µ
V GS = 8V
40
V GS = 7V
30
10
20
V GS = 6V
T J = 150 o C
T J = 25 o C
1
10
V GS = 5V
0
V GS = 4V
0
1
2
3
4
5
0.1
0
2 4 6 8
V GS , GATE TO SOURCEVOLTAGE (V)
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
0.5
s
DUTY CYCLE = 0.5% MAX
µ
3.0
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
I D = 17A, V GS = 10V
0.4
2.4
0.3
1.8
0.2
V GS = 10V
1.2
0.1
V GS = 20V
0.6
0
0
0
25
50
75
100
125
-40
0 40
T J , JUNCTION TEMPERATURE ( o C)
80
120
160
I D , DRAIN CURRENT (A)
NOTE: Heating effect of 2 µ s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
IRFP250 Rev. B
PULSE DURATION = 80
PULSE DURATION = 80
44330325.005.png 44330325.006.png 44330325.007.png
 
IRFP250
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I D = 250
µ
A
7500
V GS = 0V, f = 1MHz
C ISS = C GS + C GD
C RSS = C GD
C OSS ≈ C DS + C GD
1.15
6000
1.05
4500
C ISS
0.95
3000
C OSS
0.85
1500
C RSS
0.75
0
-40
0 40
T J , JUNCTION TEMPERATURE ( o C)
80
120
160
1
2
5
10
2
5
10 2
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
25
s
DUTY CYCLE = 0.5% MAX
V DS
µ
10 3
s
DUTY CYCLE = 0.5% MAX
µ
T J = 25 o C
≥≥
50V
20
10 2
15
T J = 150 o C
10
T J = 150 o C
T J = 25 o C
10
5
0 0
10
20
30
40
50
1
0
0.5
1.0
1.5
2.0
I D , DRAIN CURRENT (A)
V SD , SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I D = 30A
16
V DS = 160V
V DS = 100V
V DS = 40V
12
8
4
0
0
25
50
75
100
125
Q g , GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRFP250 Rev. B
PULSE DURATION = 80
PULSE DURATION = 80
44330325.008.png

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