CNY74-2.PDF

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TELEFUNKEN Semiconductors
CNY74-2/CNY74-4
Multichannel Optocoupler with Phototransistor Output
Description
The CNY74-2 and CNY74-4 consist of a phototransistor
optically coupled to a gallium arsenide infrared emitting
diode in a 8 lead, resp. 16 lead plastic dual inline pack-
ages.
The elements are mounted on one leadframe in coplanar
technique, providing a fixed distance between input and
output for highest safety requirements.
95 10534
95 10828
Applications
Galvanically separated circuits, non-interacting
switches.
CNY74-2 includes 2 isolator channels
Low coupling capacitance typical 0.3 pF
CNY74-4 includes 4 isolator channels
C urrent T ransfer R atio (CTR) typical 100%
DC isolation test voltage V IO = 2.5 kV
Low temperature coefficient of CTR
Test class 25/100/21 DIN 40 045
Wide ambient temperature range
Pin Connections
8
7
6
5
16
15
14
13
12
11
10
9
1
2
3
4
1
2
3
4
5
6
7
8
CNY74-2
CNY74-4
Rev. A1: 19.09.1995
1 (6)
Features
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CNY74-2/CNY74-4
TELEFUNKEN Semiconductors
Absolute Maximum Ratings
for single coupled system
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Reserve voltage
V R
6
V
Forward current
I F
60
mA
Forward surge current
t p
3
10
s
I FSM
1.5
A
Power dissipation
T amb
3
25
°
C
P V
100
mW
Junction temperature
T j
125
°
C
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V CEO
70
V
Emitter collector voltage
V ECO
7
V
Collector current
I C
50
mA
Peak collector current
t p /T = 0.5, t p
3
10 ms
I CM
100
mA
Power dissipation
T amb
3
25
°
C
P V
150
mW
Junction temperature
T j
125
°
C
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
DC Isolation test voltage
V IO 1)
2.5
V
Total power dissipation
T amb
3
25
°
C
P tot
250
mW
Ambient temperature range
T amb
–40 to +100
°
C
Storage temperature range
T stg
–55 to +125
°
C
Soldering temperature
2 mm from case,
t
3
10 s
T sd
260
°
C
1)
related to standard climate 23/50 DIN 50 014
2 (6)
Rev. A1: 19.09.1995
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TELEFUNKEN Semiconductors
CNY74-2/CNY74-4
Electrical Characteristics
for single coupled system, T amb = 25
°
C
Input (Emitter)
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I F = 50 mA
V F
1.25
1.6
V
Breakdown voltage
I R = 100
A
V (BR)
5
V
Output (Detector)
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter break-
down voltage
I C = 1 mA
V (BR)CEO
70
V
Emitter collector break-
down voltage
I E = 100
A
V (BR)ECO
7
V
Collector dark current
V CE = 20 V,
I F = 0, E = 0
I CEO
100
nA
Coupler
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
DC Isolation test voltage
t = 2 s
V IO 1)
2.5
kV
Isolation resistance
V IO = 1000 V,
40% relative humidity
R IO 1)
10 10
10 12
Collector current
I F = 5 mA, V CE = 5 V
I F = 10 mA, V CE = 5 V
I C
I C
2.5
6
5
12
30
mA
mA
I C /I F
I F = 10 mA, V CE = 5 V
CTR
0.5
1
6
Collector emitter saturation
voltage
I F = 10 mA, I C = 1 mA
V CEsat
0.3
V
Cut-off frequency
V CE = 5 V, I F = 10 mA,
R L = 100
f c
100
kHz
Coupling capacitances
f = 1 MHz
C k
0.3
pF
1)
related to standard climate 23/50 DIN 50 014
Rev. A1: 19.09.1995
3 (6)
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CNY74-2/CNY74-4
TELEFUNKEN Semiconductors
Switching Characteristics (Typical Values)
V S = 5 V
R L = 100 k
, see figure KEIN MERKER
R L = 1 k
, see fig.
KEIN MERKER
Type
ype
t d [
s] t r [
s] t on [
s] t s [
s] t f [
s] t off [
s] I C [mA] t on [
s] t off [
s] I F [mA]
CNY74-2/ CNY74-4
3.0
3.0
6.0
0.3
4.7
5.0
2
9
18
10
I F
I F
+ 5 V
0
I C
= 2 mA ;
adjusted through
input amplitude
R G
= 50
t p
= 0.01
T
t p
= 50
s
Channel I
Oscilloscope
Channel II
R L
= 1 M
50
100
C L
= 20 pF
95 10804
Figure 1. Test circuit, non saturated operation
4 (6)
Rev. A1: 19.09.1995
47908757.020.png 47908757.021.png 47908757.022.png 47908757.023.png 47908757.024.png 47908757.025.png
TELEFUNKEN Semiconductors
CNY74-2/CNY74-4
I F
I F = 10 mA
+ 5 V
0
I C
R G
= 50
t p
= 0.01
T
t p
= 50
s
Channel I
Oscilloscope
Channel II
R L
1 M
50
1 k
C L
20 pF
95 10843
Figure 2. Test circuit, saturated operation
Rev. A1: 19.09.1995
5 (6)
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